40TPS...APbF/40TPS...PbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 35 A
DESCRIPTION/FEATURES
2
(A)
TO-247AC
1 (K) (G) 3
The 40TPS...APbF High Voltage Series of silicon
Pb-free
controlled rectifiers are specifically designed for
Available
medium power switching and phase control
RoHS*
applications. The glass passivation technology
COMPLIANT
used has reliable operation up to 125 °C junction
temperature. Low Igt parts available.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
PRODUCT SUMMARY
V
T
at 40 A
I
TSM
V
RRM
< 1.45 V
500 A
800/1200 V
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
40 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
35
A
55
800/1200
500
1.45
1000
100
- 40 to 125
V
A
V
V/µs
A/µs
°C
UNITS
VOLTAGE RATINGS
PART NUMBER
V
RRM
/V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
800
1200
800
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1300
10
40TPS08PbF
40TPS12PbF
900
1300
I
RRM
/I
DRM
AT 125 °C
mA
40TPS08APbF
40TPS12APbF
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94388
Revision: 12-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
40TPS...APbF/40TPS...PbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 35 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
Maximum latching current
Maximum reverse and direct leakage current
Maximum rate of rise of off-state voltage 40TPS08
Maximum rate of rise of off-state voltage 40TPS12
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
dI/dt
I
H
I
L
I
RRM/
I
DRM
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
110 A, T
J
= 25 °C
T
J
= 25 °C
T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
Initial T
J
=
T
J
maximum
TEST CONDITIONS
T
C
= 79 °C, 180° conduction half sine wave
VALUES
35
55
500
600
1250
1760
12 500
1.02
1.23
9.74
7.50
1.85
100
150
300
0.5
10
500
1000
V/µs
mA
A
2
s
A
2
√s
V
A
UNITS
mΩ
V
A/µs
dV/dt
T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
-k = Open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate
voltage to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GM
T
J
= - 40 °C
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
Maximum required DC gate current to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C, for 40TPS08APbF and 40TPS12APbF
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
Anode supply = 6 V
resistive load
TEST CONDITIONS
VALUES
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
40
0.25
6
V
mA
mA
V
UNITS
W
A
V
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94388
Revision: 12-Sep-08
40TPS...APbF/40TPS...PbF High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Maximum thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
DC operation
R
thJA
R
thCS
Mounting surface, smooth and greased
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
TEST CONDITIONS
VALUES
- 40 to 125
0.6
UNITS
°C
Mounting torque
40TPS08A
Marking device
Case style TO-247AC
40TPS12A
40TPS08
40TPS12
Document Number: 94388
Revision: 12-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
40TPS...APbF/40TPS...PbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 35 A
Maximum Allowable Case T
emperature (°C)
Maximum Average On-state Power Loss (W)
130
120
110
40T .. S
PS eries
R
thJC
(DC) = 0.6 °C/ W
80
70
60
50
DC
180°
120°
90°
60°
30°
Conduction Angle
100
90
80
70
0
30°
40 RMS Limit
30
Conduction Period
60°
90°
120°
180°
20
10
0
0
10
20
30
40
50
60
Avera ge On-sta te Current (A)
40T .. S
PS eries
T
J
= 125°C
10
20
30
40
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Allowable Case Temperature (°C)
130
120
110
Conduction Period
Fig. 4 - On-State Power Loss Characteristics
550
500
450
ine
Peak Half S Wa ve On-state Current (A)
40T .. S
PS eries
R
thJC
(DC) = 0.6 °C/ W
At Any Ra ted Load Condition And With
Rated V
RRM
App lied Following S
urge.
Initia l T
J
= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
100
30°
90
80
70
0
10
20
30
40
50
60
Average On-state Current (A)
60°
90°
120°
180°
DC
400
350
300
250
1
40T .. S
PS eries
10
100
Number Of Equal Amplitude Half Cycle Current Puls (N)
es
Fig. 2 - Current Rating Characteristics
Maximum Avera ge On-state Power Loss (W)
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
Avera ge On-sta te Current (A)
180°
120°
90°
60°
30°
Fig. 5 - Maximum Non-Repetitive Surge Current
600
550
500
450
400
350
300
40T .. S
PS eries
RMS Limit
Conduction Angle
40T .. S
PS eries
T
J
= 125°C
Peak Half S Wa ve On-state Current (A)
ine
Maximum Non Rep etitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapp lied
Rated V
RRM
Reapp lied
250
0.01
0.1
Pulse T in Duration (s)
ra
1
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94388
Revision: 12-Sep-08
40TPS...APbF/40TPS...PbF High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
100
Instanta neous On-state Current (A)
10
T
J
= 25°C
T
J
= 125°C
40T .. S
PS eries
1
0.5
1
1.5
2
Instantaneous On-state Voltag e (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Instantaneous Gate Voltage (V)
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20
V,
30 ohms
tr = 0.5
µs,
tp >= 6
µs
b)Recommended
load line for
<= 30% rated di/dt: 10
V,
65 ohms
tr = 1
µs,
tp >= 6
µs
(1) PGM = 100
W,
tp = 500µs
(2) PGM = 50
W,
tp = 1 ms
(3) PGM = 20
W,
tp = 25 ms
(4) PGM = 10
W,
tp = 5 ms
(a)
(b)
TJ = -40 °C
1
VGD
IGD
TJ = 25 °C
TJ = 125 °C
(4)
(3)
(2)
(1)
0.1
0.001
40TPS..A Series
Frequency Limited
by
PG(AV)
0.01
0.1
1
10
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
100
1000
T
ransient T
hermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
teady S
tate Value
(DC Operation)
S
ingle Pulse
40T .. S
PS eries
0.01
0.0001
0.001
0.01
S
quare Wave Pulse Duration (s)
0.1
1
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94388
Revision: 12-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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