CYII4SM1300AA
IBIS4-1300 1.3 MPxl Rolling Shutter
CMOS Image Sensor
Features
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SXGA resolution: 1280 x 1024 pixels
High sensitivity 20
μV/e
-
High fill factor 60%
Quantum efficiency > 50% between 500 and 700 nm.
20 noise electrons = 50 noise photons
Dynamic range: 69 dB (2750:1) in single slope operation
Extended dynamic range mode (80…100 dB) in double slope
integration
On-chip 10 bit, 10 mega Samples/s ADC
Programmable gain and offset output amplifier
4:1 sub sampling viewfinder mode (320x256 pixels)
Electronic shutter
7 x 7
μm
2
pixels
Low fixed pattern noise (1% Vsat p/p)
Low dark current: 344 pA/cm
2
(1055 electrons/s, 1 minute auto saturation)
RGB or monochrome
Digital (ADC) gamma correction
Overview
The IBIS4-1300 is a digital CMOS active pixel image sensor with
SXGA format.
Due to a patented pixel configuration a 60% fill factor and 50%
quantum efficiency are obtained. This is combined with an
on-chip double sampling technique to cancel fixed pattern noise.
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Ordering Information
Marketing Part Number
CYII4SM1300AA-QDC
CYII4SM1300AA-QWC
CYII4SD1300AA-QDC
Mono with Glass
Mono without Glass
Color Diagonal with Glass
84-pin LCC
Description
Package
Cypress Semiconductor Corporation
Document Number: 38-05707 Rev. *C
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised September 21, 2009
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CYII4SM1300AA
Architecture of Image Sensor
Block Diagram
1280 x 1024 pixel array
10 bit ADC
output
amplifier
The IBIS4-1300 is an SXGA CMOS image sensor. The chip is composed of 3 modules: an image sensor core, a programmable gain
output amplifier, and an on-chip 10 bit ADC.
Figure 1.
shows the architecture of the image sensor core.
Figure 1. Architecture of Image Sensor Core
Y readout shift register
Readout row pointer
1286 x 1030 pixels
Clock_YR
Clock_YL
Sync_YL
Column amplifiers
X shift register
Sync_YR
Clock_X
Document Number: 38-05707 Rev. *C
Sync_X
Reset row pointer
Pixel array
Y reset shift register
Page 2 of 35
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CYII4SM1300AA
Image Sensor Core – Focal Plane Array
The core of the sensor is the pixel array with 1280 x 1024 (SXGA)
active pixels. The name 'active pixels' refers to the amplifying
element in each pixel.
This type of pixels offer a high light sensitivity combined with low
temporal noise. The actual array size is 1286 x 1030 including
the 6 dummy pixels in X and Y. Although the dummy pixels fall
outside the SXGA format, their information can be used e.g. for
color filter array interpolation.
Figure 2. Pixel Selection
–
Principle
Y readout shift register
X shift register
Next to the pixel array there are two Y shift registers, and one X
shift register with the column amplifiers. The shift registers act as
pointers to a certain row or column. The Y readout shift register
accesses the row (line) of pixels that is currently readout. The X
shift register selects a particular pixel of this row. The second Y
shift register is used to point at the row of pixels that is reset. The
delay between both Y row pointers determines the integration
time -thus realizing the electronic shutter.
A clock and a synchronization pulse control the shift registers.
On every clock pulse, the pointer shifts one row/column further.
Table 1. Optical and Electrical Characteristics
Pixel Characteristics
Pixel structure
Photodiode
Pixel size
Resolution
Pixel rate with on-chip ADC
Frame rate with on-chip ADC
Frame rate with analog output
A sync pulse is used to reset and initialize the shift registers to
their first position.
The smart column amplifiers compensate the offset variations
between individual pixels. To do so, they need a specific pulse
pattern on specific control signals before the start of the row
readout.
Table 1.
summarizes the optical and electrical characteristics of
the image sensor. Some specifications are influenced by the
output amplifier gain setting (e.g., temporal noise, conversion
factor,...). Therefore, all specifications are referred to an output
amplifier gain equal to 1.
3-transistor active pixel
High fill factor photodiode
7 x 7
μm
2
1286 x 1030 pixels
SXGA plus 6 dummy rows and columns
Nominal 10 MHz (Note 1) (Note 2)
About 7 full frames/s at nominal speed
Up to 23 full frames per second (see table1.1)
Document Number: 38-05707 Rev. *C
Page 3 of 35
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CYII4SM1300AA
Table 1. Optical and Electrical Characteristics
(continued)
Pixel Characteristics
Table 1.1.
In this table you find achievable values using the analog output.
X pixelsY pixels
#
#
1286 1030
1286 1030
1286 1030
1286 1030
1286
512
X Freq
Hz
1,00E+07
2,00E+07
3,00E+07
3,75E+07
3,75E+07
X Clock X Blanking
sec
sec
1,00E-07 6,25E-06
5,00E-08 6,25E-06
3,33E-08 6,25E-06
2,67E-08 6,25E-06
2,67E-08 6,25E-06
line time
sec
0,000134850
0,000070550
0,000049117
0,000040543
0,000040543
frame time frame rate
sec
per sec
0,138895500
7,20
0,072666500
13,76
0,050590167
19,77
0,041759633
23,95
0,020758187
48,17
pixel rate pixel rate freq
sec
Hz
1,049E-07
9536522
5,486E-08
18228207
3,819E-08
26182559
3,153E-08
31719148
3,153E-08
31719148
Note
1. The pixel rate can be boosted to 37.5 MHz. This requires a few measures.
❐
increase the analog bandwidth by halving the resistor on pin Nbias_oamp
❐
increase the ADC speed by the resistors related to the ADC speed (nbiasana1, nbiasana2, pbiasencload)
❐
experimentally fine tune the relative occurrence of the ADC clock relative to the X-pixel clock.
Note
2. The pure digital scan speed in X and Y direction is roughly 50 MHz. This is maximum speed for skipping rows and columns.
Light Sensitivity and Detection
Spectral sensitivity range
Spectral response * fill factor
Quantum efficiency * fill factor
Fill factor
Charge-to-voltage conversion gain
Output signal amplitude
Full well charge [electrons]
Noise equivalent flux at focal plane (700 nm)
Sensitivity
MTF at Nyquist frequency
Optical cross talk
Image Quality
Temporal noise (dark, short integration time)
Dynamic range
(analog output, before ADC conversion)
Dark current
20 noise electrons = 50 peak noise photons
3
400
μV
RMS
2750:1
69 dB
344 pA/cm
2
at 21ºC
19 mV/s
1055 electrons/s
Typically 15% RMS of dark current level.
9.6 mV peak-to-peak
1-2 mV RMS
10% peak-to-peak at ½ of saturation signal
No missing columns nor rows
Less than 100 missing pixels, clusters=<4 pixels
Page 4 of 35
400 - 1000 nm
0.165 A/W at 700 nm
> 30% between 500 and 700 nm
60%
20
μV/e
-
1.2 V
IBIS4-1300: about 90000 saturation, 50000 linear range
1.1e-4 lx*s (at focal plane)
6.3 e-7 s.W/m2
7 V/lx.s
1260 V.m2/W.s
0.4-0.5 at 450 nm
0.25-0.35 at 650 nm
10% to 1
st
neighbor
2% to 2
nd
neighbor
Dark current non-uniformity
Fixed pattern noise
(dark, short integration time)
Photo-response non-uniformity (PRNU)
Yield criteria
Document Number: 38-05707 Rev. *C
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Table 1. Optical and Electrical Characteristics
(continued)
Pixel Characteristics
Anti-blooming
Smear
Overexposure suppression > 105
Absent
Note
3. Peak noise photons are defined as (noise electrons) / (FF*peak QE).
Features and General Specifications
Electronic shutter
Viewfinder mode
Digital output
Color filter array
Die size
Package
Supply voltage
Power supply feed trough (dVout/dVdd)
Power dissipation (continuous operation, 10 MHz, ADC outputs
loaded)
Light Sensitivity
Figure 3. Spectral Response * Fill Factor of IBIS4-1300 Pixels
0.2
0.18
0.16
Response [A/W]
Rolling curtain type
Increment = line time = 135 µs
4 x sub-sampling (320 x 256 pixels)
10 bit
Primary colors (Red, Green, Blue)
RGB diagonal stripe pattern or Bayer pattern
10.30 x 9.30 mm
2
84 pins LCC chip carrier
0.460 inch cavity
5 V stabilized (e.g. from a 7805 regulator)
< 0.3 for low-frequencies (< 1 MHz)
< 0.05 for high frequencies (> 1 MHz)
Min. 50 mA, Typ. 70 mA, Max. 90 mA
30%
40%
20%
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
400
500
600
700
800
900
10%
1000
Wavelength [nm]
Document Number: 38-05707 Rev. *C
Page 5 of 35
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