UTC MCR100
SENSITIVE GATE SILICON
CONTROLLED RECTIFIERS
REVERSE BLOCKING
THYRISTORS
DESCRIPTION
PNPN devices designed for high volume,
line-powered consumer applications such as relay
and lamp drivers, small motor controls, gate drivers
for larger thyristors, and sensing and detection
circuits. Supplied in an inexpensive plastic TO-92
package which is readily adaptable for use in
automatic insertion equipment.
SCR
1
DESCRIPTION
*Sensitive Gate Allows Triggering by Micro controllers
and Other Logic circuits
*Blocking Voltage to 600V
*On-State Current Rating of 0.8A RMS at 80°C
*High Surge Current Capability – 10A
*Minimum and Maximum Values of IGT, VGT and IH
Specified for Ease of Design
*Immunity to dV/dt – 20V/µsec Minimum at 110°C
*Glass-Passivated Surface for Reliability and
Uniformity
TO-92
*Pb-free plating product number:MCR100L
1:CATHODE
2:GATE
3:ANODE
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Lead Solder Temperature
(<1/16” from case, 10 secs max)
SYMBOL
R
θJC
R
θJA
T
L
MAX
75
200
260
UNIT
°C/W
°C/W
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak Repetitive Off-State Voltage(note)
(T
J
=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open)
MCR100-4
MCR100-6
MCR100-8
On-Sate RMS Current
(Tc=80°C) 180° Condition Angles
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, T
J
=25°C)
SYMBOL
V
DRM,
V
RRM
MAX
UNIT
V
200
400
600
I
T(RMS)
I
TSM
0.8
10
A
A
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-004,B
UTC MCR100
PARAMETER
Circuit Fusing Considerations
(t=8.3 ms)
Forward Peak Gate Power
(T
A
=25°C, Pulse Width
≤1.0µs)
Forward Average Gate Power
(T
A
=25°C, t=8.3ms)
Peak Gate Current – Forward
(T
A
=25°C, Pulse Width≤1.0µs)
Peak Gate Voltage – Reverse
(T
A
=25°C, Pulse Width≤1.0µs)
Operating Junction Temperature Range @ Rated V
RRM
and
V
DRM
SCR
SYMBOL
It
P
GM
P
G(AV)
I
GM
V
GRM
T
J
2
MAX
0.415
0.1
0.1
1
5
-40 to +110
UNIT
A
2
s
W
W
A
V
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Note: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
ELECTRICAL CHARACTERISTICS
(Tj=25°C, unless otherwise stated)
PARAMETER
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking
Current
Tc=25°C
Tc=125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage
(Note1)
Gate Trigger Current (Continuous
dc)(note2)
Holding Current (note 3) Tc=25
°C
Tc=-40
°C
Latch Current
Gate Trigger Current
(continuous dc) (Note 2)
Tc=25
°C
Tc=-40
°C
Tc=25
°C
Tc=-40
°C
V
D
=Rated V
DRM
, Exponential
Waveform, R
GK
=1000Ω, T
J
=110°C
I
PK
=20A; Pw=10µsec;
diG/dt=1A/µsec, Igt=20mA
dV/dt
di/dt
20
I
TM
=1A Peak @ T
A
=25°C
V
AK
=7Vdc, R
L
=100Ω, T
C
=25°C
V
AK
=7Vdc, initiating current=20mA
V
AK
=7V, Ig=200µA
V
AK
=7Vdc, R
L
=100Ω
V
TM
I
GT
I
H
I
L
V
GT
0.62
0.8
1.2
V/µs
50
A/µs
40
0.5
0.6
1.7
200
5
10
10
15
V
µA
mA
mA
V
V
D
=Rated V
DRM
and V
RRM
; R
GK
=1kΩ
I
DRM
, I
RRM
10
100
µA
µA
TEST CONDITION
SYMBOL
MIN TYP MAX UNIT
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Rise of On-State
Current
35
Notes: 1. Indicates Pulse Test Width≤1.0ms, duty cycle
≤1%
2. R
GK
=1000Ω included in measurement.
3. Does not include R
GK
in measurement.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-004,B
UTC MCR100
VOLTAGE CURRENT CHARACTERISTIC OF SCR
SYMBOL
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
PARAMETER
Peak Repetitive Off Stat Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
SCR
CLASSIFICATION OF I
GT
RANK
RANGE
B
48~105µA
C
95~200µA
AA
8~16µA
AB
14~21µA
AC
19~25µA
AD
23~52µA
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-004,B
UTC MCR100
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-004,B
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