电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N4151W

产品描述silicon epitaxial planar small signal diode
文件大小291KB,共4页
制造商SEMTECH
官网地址http://www.semtech.com
下载文档 全文预览

1N4151W概述

silicon epitaxial planar small signal diode

文档预览

下载PDF文档
1N4151W
Silicon Epitaxial Planar Small Signal Diode
Features
SOD 123 package
Fast switching
Absolute Maximum Ratings (Ta=25℃)
Parameter
Peak reverse voltage
Reverse voltage
Average rectified current half wave
Rectification with resistive load f≧50Hz
Surge forward current t<1s Tj=25℃
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
P
tot
R
thJA
T
J
T
stg
Limits
75
50
150*
500
410*
450*
150
-65 to +150
Unit
V
V
mA
mA
mW
℃/W
*
Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics (Ta=25℃)
Parameter
Forward voltage
Leakage current
Reverse breakdown voltage
Capacitance
Reverse recovery time
Rectification efficiency
Symbol Min Typ Max
-
-
1.0
V
F
I
R
-
-
50
50
-
-
V
(BR)R
75
-
-
2
C
tot
t
rr
-
-
4.0
-
-
2.0
η
v
0.45 -
-
Unit
Conditons
V I
F
=50mA
nA V
R
=50V
µA V
R
=20V, T
J
=150℃
V
pF
ns
ns
-
Tested with 5µA pulses
V
F
=V
R
=0V
From I
F
=10mA through I
R
=10mA to I
R
=1mA
From I
F
=10mA to I
R
=1mA, V
R
=6V, R
L
=100Ω
f=100MHz, V
RF
=2V
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/05/2005

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2328  1409  2106  1085  27  39  49  33  54  27 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved