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MX29LV161BTC-90R: 产品描述16m-bit [2mx8/1mx16] cmos single voltage 3V only flash memory; 产品类别存储存储; 文件大小995KB，共58页; 制造商Macronix; 官网地址http://www.macronix.com/en-us/Pages/default.aspx

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MX29LV161BTC-90R概述

16m-bit [2mx8/1mx16] cmos single voltage 3V only flash memory

MX29LV161BTC-90R规格参数

参数名称	属性值
厂商名称	Macronix
零件包装代码	TSOP1
包装说明	TSOP1, TSSOP48,.8,20
针数	48
Reach Compliance Code	unknow
ECCN代码	EAR99
最长访问时间	90 ns
备用内存宽度	8
启动块	BOTTOM
命令用户界面	YES
数据轮询	YES
JESD-30 代码	R-PDSO-G48
JESD-609代码	e0
长度	18.4 mm
内存密度	16777216 bi
内存集成电路类型	FLASH
内存宽度	16
功能数量	1
部门数/规模	1,2,1,31
端子数量	48
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	1MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1
封装等效代码	TSSOP48,.8,20
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
电源	3.3 V
编程电压	3 V
认证状态	Not Qualified
就绪/忙碌	YES
座面最大高度	1.2 mm
部门规模	16K,8K,32K,64K
最大待机电流	0.000005 A
最大压摆率	0.03 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	TIN LEAD
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
切换位	YES
类型	NOR TYPE
宽度	12 mm

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MX29LV161T/B

16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE

3V ONLY FLASH MEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 2,097,152 x 8/1,048,576 x 16 switchable

• Single power supply operation

- 3.0V only operation for read, erase and program

operation

• Fast access time: 70/90ns

• Low power consumption

- 20mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

• Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, any sector that is not being erased,

then resumes the erase.

• Status Reply

- Data polling & Toggle bit for detection of program and

erase operation completion.

Ready/Busy pin (RY/BY)

- Provides a hardware method of detecting program or

erase operation completion.

Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Tempoary sector unprotect allows code changes in

previously locked sectors.

100,000 minimum erase/program cycles

Latch-up protected to 100mA from -1V to VCC+1V

Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

Low VCC write inhibit is equal to or less than 2.3V

Package type:

- 44-pin SOP

- 48-pin TSOP

- 48 Ball CSP

Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

•

GENERAL DESCRIPTION

The MX29LV161T/B is a 16-mega bit Flash memory or-

ganized as 2M bytes of 8 bits or 1M words of 16 bits.

MXIC's Flash memories offer the most cost-effective

and reliable read/write non-volatile random access

memory. The MX29LV161T/B is packaged in 44-pin

SOP, 48-pin TSOP, and 48CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29LV161T/B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29LV161T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV161T/B uses a command register to manage

this functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV161T/B uses a 2.7V~3.6V VCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM0855

REV. 1.0, SEP. 24, 2001

MX29LV161BTC-90R相似产品对比

	MX29LV161BTC-90R	MX29LV161BTI-90R	MX29LV161BXBI-90R	MX29LV161BTC-70R	MX29LV161BTI-70R
描述	16m-bit [2mx8/1mx16] cmos single voltage 3V only flash memory	16m-bit [2mx8/1mx16] cmos single voltage 3V only flash memory	16m-bit [2mx8/1mx16] cmos single voltage 3V only flash memory	16m-bit [2mx8/1mx16] cmos single voltage 3V only flash memory	16m-bit [2mx8/1mx16] cmos single voltage 3V only flash memory
零件包装代码	TSOP1	TSOP1	BGA	TSOP1	TSOP1
包装说明	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TFBGA, BGA48,6X8,32	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20
针数	48	48	48	48	48
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	90 ns	90 ns	90 ns	70 ns	70 ns
备用内存宽度	8	8	8	8	8
启动块	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
命令用户界面	YES	YES	YES	YES	YES
数据轮询	YES	YES	YES	YES	YES
JESD-30 代码	R-PDSO-G48	R-PDSO-G48	R-PBGA-B48	R-PDSO-G48	R-PDSO-G48
JESD-609代码	e0	e0	e0	e0	e0
长度	18.4 mm	18.4 mm	13 mm	18.4 mm	18.4 mm
内存密度	16777216 bi	16777216 bi	16777216 bi	16777216 bi	16777216 bi
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	16	16	16	16	16
功能数量	1	1	1	1	1
部门数/规模	1,2,1,31	1,2,1,31	1,2,1,31	1,2,1,31	1,2,1,31
端子数量	48	48	48	48	48
字数	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	85 °C	70 °C	85 °C
最低工作温度	-	-40 °C	-40 °C	-	-40 °C
组织	1MX16	1MX16	1MX16	1MX16	1MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	TSOP1	TFBGA	TSOP1	TSOP1
封装等效代码	TSSOP48,.8,20	TSSOP48,.8,20	BGA48,6X8,32	TSSOP48,.8,20	TSSOP48,.8,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
编程电压	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
就绪/忙碌	YES	YES	YES	YES	YES
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
部门规模	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K
最大待机电流	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
最大压摆率	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	GULL WING	GULL WING	BALL	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.8 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	BOTTOM	DUAL	DUAL
切换位	YES	YES	YES	YES	YES
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	12 mm	12 mm	8 mm	12 mm	12 mm
厂商名称	Macronix	-	Macronix	Macronix	-
Base Number Matches	-	1	1	-	1

MX29LV161BTC-90R

MX29LV161BTC-90R概述

MX29LV161BTC-90R规格参数

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MX29LV161BTC-90R相似产品对比

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