Preliminary Data Sheet I2144 11/97
SAFE
IR
Series
12TTS08
PHASE CONTROL SCR
V
T
Description/Features
The 12TTS08
SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
Typical applications are in input rectification and
crow-bar (soft start) and these products are
designed to be used with International Rectifier
input diodes, switches and output rectifiers which
are available in identical package outlines.
< 1.2V @ 8A
I
TSM
= 140A
V
RRM
= 800V
Output Current in Typical Applications
Applications
Capacitive input filter T
A
= 55°C, T
J
= 125°C,
common heatsink of 1°C/W
Single-phase Bridge
13.5
Three-phase Bridge Units
17
A
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
T(RMS)
V
RRM
/V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
range
@ 8 A, T
J
= 25°C
12.5
800
140
1.2
150
100
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
Package Outline
Units
A
12TTS08
8
TO-220AC
Also available in SMD-220 package (series 12TTS..S)
1
12TTS08
SAFE
IR
Series
Preliminary Data Sheet I2144 11/97
Voltage Ratings
Part Number
12TTS08
V
RRM
, maximum
peak reverse voltage
V
800
V
DRM
, maximum
peak direct voltage
V
800
I
RRM
/
I
DRM
125°C
mA
1.0
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
T(RMS)
Max. RMS On-state Current
I
TSM
Max. Peak One Cycle Non-Repetitive
Surge Current
I
2
t
Max. I
2
t for fusing
12TTS08
8
12.5
120
140
72
100
Units
A
Conditions
@ T
C
= 108° C, 180° conduction half sine wave
A
10ms Sine pulse, rated V
RRM
applied,T
J
= 125°C
10ms Sine pulse, no voltage reapplied, T
J
= 125°C
A
2
s
10ms Sine pulse, rated V
RRM
applied,T
J
= 125°C
10ms Sine pulse, no voltage reapplied, T
J
= 125°C
I
2
√t
V
TM
r
t
Max. I
2
√t
for fusing
Max. On-state Voltage Drop
On-state slope resistance
1000
1.2
16.2
0.87
0.05
1.0
30
50
150
100
A
2
√s
V
mΩ
V
mA
t = 0.1 to 10ms, no voltage reapplied,T
J
= 125°C
@ 8A, T
J
= 25°C
T
J
= 125°C
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
I
L
Typ. Holding Current
Max. Latching Current
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
RRM
/ V
DRM
mA
mA
V/µs
A/µs
Anode Supply = 6V, Resistive load, Initial I
T
=1A
Anode Supply = 6V, Resistive load
T
J
= 25°C
dv/dt Max. rate of rise of off-state Voltage
di/dt
Max. rate of rise of turned-on Current
2
12TTS08
SAFE
IR
Series
Preliminary Data Sheet I2144 11/97
Triggering
Parameters
P
GM
Max. peak Gate Power
12TTS08
8.0
2.0
1.5
10
20
15
10
Units
W
Conditions
P
G(AV)
Max. average Gate Power
+ I
GM
Max. paek positive Gate Current
- V
GM
Max. paek negative Gate Voltage
I
GT
Max. required DC Gate Current
to trigger
A
V
mA
Anode supply = 6V, resistive load, T
J
= - 65°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
Anode supply = 6V, resistive load, T
J
= - 65°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
mA
T
J
= 125°C, V
DRM
= rated value
V
GT
Max. required DC Gate Voltage
to trigger
1.2
1
0.7
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.2
0.1
Switching
Parameters
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
12TTS08
0.8
3
100
Units
µs
T
J
= 25°C
T
J
= 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typ. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
Min.
Max.
Case Style
0.5
2 (0.07)
6 (5)
12 (10)
g (oz.)
Kg-cm
(Ibf-in)
Mountingsurface,smoothandgreased
62
12TTS08
- 40 to 125
- 40 to 125
1.5
Units
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
°C/W
DCoperation
TO-220AC
3
12TTS08
SAFE
IR
Series
Preliminary Data Sheet I2144 11/97
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
125
12TTS08
R
thJ C
(DC) = 1.5 K/W
120
125
12TTS08
R
thJC
(DC) = 1.5 K/W
120
115
Conduction Angle
115
Conduction Period
110
30°
105
60°
90°
120°
180°
100
0
2
4
6
8
10
Average On-state Current (A)
110
30°
60°
90°
120°
180°
DC
12
14
105
100
0
2
4
6
8
10
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
Average On-state Current (A)
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
Average On-state Current (A)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
12TTS08
T
J
= 125°C
12TTS08
T
J
= 125°C
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
150
140
130
120
110
100
90
80
70
60
50
0.01
12TTS08
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
130
120
110
100
90
80
70
60
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
12TTS08
10
100
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
4
12TTS08
SAFE
IR
Series
Preliminary Data Sheet I2144 11/97
1000
Instantaneous On-state Current (A)
12TTS08
100
10
T
J
= 25°C
T
J
= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(°C/W)
10
Steady State Value
(DC Operation)
1
D
D
D
D
= 0.50
= 0.33
= 0.25
= 0.17
0.1
D = 0.08
Single Pulse
12TTS08
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
5
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