HMC578LC3B
v03.0514
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 23 - 33 GHz
Typical Applications
The HMC578LC3B is suitable for:
Features
High Output Power: +15 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: >20 dBc @ Fout= 28 GHz
100 KHz SSB Phase Noise: -132 dBc/Hz
Single Supply: +5V@ 81 mA
RoHS Compliant 3x3 mm SMT Package
FREQ. MULTIPLIERS - ACTIVE - SMT
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military & Space
Functional Diagram
General Description
The HMC578LC3B is a x2 active broadband frequ-
ency multiplier utilizing GaAs PHEMT technology in a
leadless RoHS compliant SMT package. When driven
by a +3 dBm signal, the multiplier provides +15 dBm
typical output power from 23 to 33 GHz. The Fo and
3Fo isolations are >20 dBc and >30 dBc respectively
at 28 GHz. The HMC578LC3B is ideal for use in LO
multiplier chains for Pt-to-Pt & VSAT Radios yielding
reduced parts count vs. traditional approaches. The
low additive SSB Phase Noise of -129 dBc/Hz at
100 kHz offset helps maintain good system noise
performance. The RoHS packaged HMC578LC3B
eliminates the need for wire bonding, and allows the
use of surface mount manufacturing techniques.
Electrical Specifications,
T
A
= +25° C, Vdd1, Vdd2 = +5V, 3 dBm Drive Level
Parameter
Frequency Range, Input
Frequency Range, Output
Output Power
Fo Isolation (with respect to output level)
3Fo Isolation (with respect to output level)
Input Return Loss
Output Return Loss
SSB Phase Noise (100 kHz Offset)
Supply Current (Idd1 & Idd2)
10
Min.
Typ.
11.5 - 16.5
23 - 33
15
20
30
10
12
-132
81
Max.
Units
GHz
GHz
dBm
dBc
dBc
dB
dB
dBc/Hz
mA
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC578LC3B
v03.0514
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 23 - 33 GHz
Output Power vs.
Temperature @ 3 dBm Drive Level
20
Output Power vs. Drive Level
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-6 dBm
-2 dBm
2 dBm
-4 dBm
0 dBm
6 dBm
4 dBm
OUTPUT POWER (dBm)
12
8
+25 C
+85 C
-40 C
4
0
20
22
24
26
28
30
32
34
36
OUTPUT FREQUENCY (GHz)
OUTPUT POWER (dBm)
16
20
22
24
26
28
30
32
34
36
OUTPUT FREQUENCY (GHz)
Output Power vs.
Supply Voltage @ 3 dBm Drive Level
20
Isolation @ 3 dBm Drive Level
20
10
0
-10
-20
-30
-40
OUTPUT POWER (dBm)
OUTPUT POWER (dBm)
16
Fo
2Fo
3Fo
12
8
Vdd=4.5V
Vdd=5.0V
Vdd=5.5V
4
0
20
22
24
26
28
30
32
34
36
OUTPUT FREQUENCY (GHz)
20
22
24
26
28
30
32
34
36
FREQUENCY (GHz)
Output Power vs. Input Power
20
15
OUTPUT POWER (dBm)
10
5
0
-5
-10
-15
-20
-10
24.0 GHz
28.5 GHz
33.0 GHz
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
FREQ. MULTIPLIERS - ACTIVE - SMT
2
HMC578LC3B
v03.0514
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 23 - 33 GHz
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
FREQ. MULTIPLIERS - ACTIVE - SMT
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
+25 C
+85 C
-40 C
-4
-8
-10
-12
-15
-16
-20
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
-20
20
22
24
26
28
30
32
34
36
FREQUENCY (GHz)
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC578LC3B
v03.0514
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 23 - 33 GHz
Absolute Maximum Ratings
RF Input (Vdd = +5V)
Supply Voltage (Vdd)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 7.4 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+13 dBm
+6.0 Vdc
175 °C
670 mW
135 °C/W
-65 to +150
°C
-40 to +85
°C
Typical Supply Current vs. Vdd
Vdd (Vdc)
4.5
5.0
5.5
Idd (mA)
81
81
Note:
Multiplier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER
50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Package Information
Part Number
HMC578LC3B
Package Body Material
Alumina, White
Lead Finish
Gold over Nickel
MSL Rating
MSL3
[1]
Package Marking
[2]
H578
XXXX
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
FREQ. MULTIPLIERS - ACTIVE - SMT
4
81
HMC578LC3B
v03.0514
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 23 - 33 GHz
Pin Description
Pin Number
Function
GND
Description
Package bottom must also be connected
to RF/DC ground.
Interface Schematic
FREQ. MULTIPLIERS - ACTIVE - SMT
1, 3, 7, 9
2
RFIN
Pin is AC coupled and matched to 50 Ohms.
These pins are internally not connected; however,
this product was specified with these pins connected
to RF/ DC ground.
Pin is AC coupled and matched to 50 Ohms.
4 - 6, 11
N/C
8
RFOUT
10, 12
Vdd2, Vdd1
Supply voltage 5V ± 0.5V. External bypass capacitors
of 100 pF, 1,000 pF and 2.2 µF are required.
Application Circuit
Component
C1, C2
C3, C4
C5, C6
Value
100 pF
1,000 pF
2.2 µF
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
