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5KP8.0A-E3/4

产品描述Trans Voltage Suppressor Diode, 5000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN
产品类别分立半导体    二极管   
文件大小88KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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5KP8.0A-E3/4概述

Trans Voltage Suppressor Diode, 5000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN

5KP8.0A-E3/4规格参数

参数名称属性值
是否Rohs认证符合
包装说明O-PALF-W2
针数2
制造商包装代码CASE P600
Reach Compliance Codeunknow
ECCN代码EAR99
最大击穿电压9.83 V
最小击穿电压8.89 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值反向功率耗散5000 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT APPLICABLE
极性UNIDIRECTIONAL
最大功率耗散8 W
认证状态Not Qualified
最大重复峰值反向电压8 V
表面贴装NO
技术AVALANCHE
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT APPLICABLE
Base Number Matches1

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5KP5.0 thru 5KP188A
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• P600, glass passivated chip junction
• Available in Unidirectional polarity only
• 5000 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
Case Style P600
• Low incremental surge resistance
• Typical I
D
less than 1 µA V
(BR)
above 10 V rating
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
MAJOR RATINGS AND CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
T
j
max.
5.0 V to 188 V
5000 W
8.0 W
500 A
175 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
Peak pulse current with a 10/1000 µs
waveform
(1)
(1)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
5000
see next table
8.0
600
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave (Fig. 5)
Instantaneous forward voltage at 100 A
(2)
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number 88308
20-Jun-06
www.vishay.com
1

 
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