Data Sheet
FEATURES
Noise figure: 1.5 dB at 4 GHz (see Figure 10)
Gain
16.5 dB at 1 GHz to 6 GHz
14 dB at 6 GHz to 11 GHz
Output power for 1 dB compression (P1dB): 18 dBm
at 1 GHz to 6 GHz
Supply voltage (V
DD
): 5 V at 55 mA
Output third-order intercept (IP3): 30 dBm at 1 GHz to 6 GHz
50 Ω matched input/output (I/O)
24-lead lead frame chip scale package (LFCSP): 16 mm
2
1 GHz to 11 GHz, GaAs, HEMT,
MMIC Low Noise Amplifier
HMC753
FUNCTIONAL BLOCK DIAGRAM
GND
24
23
22
21
20
19
18
GND
17
GND
16
RFOUT
15
GND
14
GND
13
GND
GND
1
GND
2
RFIN
3
GND
4
GND
5
GND
6
HMC753
V
DD
10
NC
11
V
GG
2
8
V
GG
1
9
GND
12
GND
7
GND
NC
NC
NC
NC
Figure 1.
APPLICATIONS
Point to point radios
Point to multipoint radios
Military and space
Test instrumentation
GENERAL DESCRIPTION
The
HMC753
is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), low noise, wideband
amplifier housed in a leadless, 4 mm × 4 mm LFCSP. The amplifier
operates between 1 GHz and 11 GHz, providing up to 16.5 dB
of small signal gain at 1 GHz to 6 GHz, a 1.5 dB noise figure at
4 GHz (see Figure 10), and an output IP3 of 30 dBm at 1 GHz to
6 GHz, while requiring only 55 mA from a 5 V supply.
The P1dB output power of up to 18 dBm at 1 GHz to 6 GHz
enables the low noise amplifier (LNA) to function as a local
oscillator (LO) driver for balanced, I/Q, or image rejection
mixers. The
HMC753
also features I/Os that are dc blocked and
internally matched to 50 Ω, making the device ideal for high
capacity microwave radios or very small aperture terminal (VSAT)
applications.
Rev. D
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13494-001
HMC753* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
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REFERENCE MATERIALS
Quality Documentation
•
Package/Assembly Qualification Test Report: LP4, LP4B,
LP4C, LP4K (QTR: 2013-00487 REV: 04)
EVALUATION KITS
•
HMC753LP4E Evaluation Board
DESIGN RESOURCES
•
HMC753 Material Declaration
•
PCN-PDN Information
•
Quality And Reliability
•
Symbols and Footprints
DOCUMENTATION
Application Notes
•
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
•
Broadband Biasing of Amplifiers General Application Note
•
MMIC Amplifier Biasing Procedure Application Note
•
Thermal Management for Surface Mount Components
General Application Note
Data Sheet
•
HMC753: 1 GHz to 11 GHz, GaAs, HEMT, MMIC Low Noise
Amplifier Data Sheet
DISCUSSIONS
View all HMC753 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
TOOLS AND SIMULATIONS
•
HMC753 S-Parameter
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HMC753
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Data Sheet
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Theory of Operation .........................................................................9
Applications Information .............................................................. 10
Biasing Procedures ..................................................................... 10
Evaluation PCB ........................................................................... 11
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
9/15—Rev. 03.0111 to Rev. D
This Hittite Microwave Products data sheet has been reformatted
to meet the styles and standards of Analog Devices, Inc.
Changes to Features Section and General Description Section ...... 1
Changes to Table 1 ............................................................................ 3
Added Table 2; Renumbered Sequentially .................................... 3
Changes to Table 3 ............................................................................ 4
Changes to Table 4 ............................................................................ 5
Added Figure 3, Figure 4, Figure 5, Figure 6, and Figure 7;
Renumbered Sequentially................................................................ 6
Added Theory of Operation Section and Figure 19 .................... 9
Added Applications Information Section, Figure 20, and Biasing
Procedures Section ......................................................................... 10
Changes to Table 5 .......................................................................... 11
Changes to Ordering Guide .......................................................... 13
Rev. D | Page 2 of 13
Data Sheet
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
T
A
= 25°C, V
DD
= 5 V, I
DD
= 55 mA.
Table 1.
Parameter
FREQUENCY RANGE
PERFORMANCE
Gain
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (P
SAT
)
Output Third Order Intercept (IP3)
POWER SUPPLY
Supply Current (I
DD
)
Min
1
14
Typ
Max
6
Unit
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
Test Conditions/Comments
HMC753
16.5
0.004
1.5
11
18
18
20
30
55
2
V
DD
= 5 V, set V
GG
2 = 1.5 V, V
GG
1 = −0.8 V typical
Table 2.
Parameter
FREQUENCY RANGE
PERFORMANCE
Gain
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (P
SAT
)
Output Third Order Intercept (IP3)
POWER SUPPLY
Supply Current (I
DD
)
Min
6
10
Typ
Max
11
Unit
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
V
DD
= 5 V, set V
GG
2 = 1.5 V, V
GG
1 = −0.8 V typical
Test Conditions/Comments
14
0.008
2
8
12
15
17
28
55
2.7
Rev. D | Page 3 of 13
HMC753
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Drain Bias Voltage
RF Input Power
Gate Bias Voltage
V
GG
1
V
GG
2
Channel Temperature
Continuous P
DISS
(T
A
) = 85°C), Derate
8.4 mW/°C Above 85°C
Thermal Resistance (Channel to Die Bottom)
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity
Human Body Model (HBM)
Rating
6.0 V
12 dBm
−1 V to +0.3 V
0 V to 2.5 V
180°C
0.8 W
119°C/W
−65°C to +150°C
−40°C to +85°C
Class 0, Passed
100 V
Data Sheet
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. D | Page 4 of 13
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