series and shunt connected PIN diodes. This device
is designed for use in broadband, low to moderate
signal, high performance, switch applications up to
20 GHz. It is a surface mountable switch configured
for optimized performance and offers a distinct
advantage over MMIC, beamlead and chip and wire
hybrid designs. Because the PIN diodes of the
MASW-004103-1365 are integrated into the chip
and kept within close proximity, the parasitics
typically associated with other designs that use
individual components are kept to a minimum.
To minimize the parasitics and achieve high
performance the MASW-004103-1365 is fabricated
using MACOMs’ patented HMIC™ (Heterolithic
Microwave Integrated Circuit) process. This process
allows the silicon pedestals, which form the series
and shunt diodes or vias, to be imbeded in low loss,
low dispersion glass. The combination of low loss
glass and using tight spacing between elements
results in an HMIC device with low loss and high
isolation through low millimeter wave frequencies.
The topside is fully encapsulated with silicon nitride
and also has an additional layer of polymer for
scratch and impact protection. The protective
coating guards against damage to the junction and
the anode airbridges during handling and assembly.
On the backside of the chip gold metalized pads
have been added to produce a solderable surmount
device.
1
J3
J4
J2
J1
Pin Configuration
Pin
J1
J2
J3
J4
J5
Function
RFC
RF1
RF2
RF3
RF4
J5
Ordering Information
Part #
MASW-004103-13650G
MASW-004103-13655P
MASW-004103-13650P
MASW-004103-001SMB
Package
50 piece gel pack
500 piece reel
3000 piece reel
Sample Test Board
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0008163
MASW-004103-1365
Silicon SP4T Surface Mount HMIC PIN Diode Switch
50 MHZ - 20 GHz
Electrical Specifications: T
A
= 25°C, P
IN
= 0 dBm, Z
0
= 50 Ω, 20 mA, -10 V
Parameter
Insertion Loss
Conditions
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
2 GHz
0.5 GHz, 5 MHz Spacing, 20 dBm
1 GHz, 10 MHz Spacing, 20 dBm
2 GHz, 10 MHz Spacing, 20 dBm
—
—
Units
dB
Min.
—
48
38
29
17
13
12
—
—
—
—
—
Typ.
0.5
0.8
1.2
51
39
32
21
17
16
53.5
41.5
31.5
36
60
63
64
20
—
Max.
0.6
1.0
1.5
—
Rev. V6
Isolation
dB
Input Return Loss
dB
—
Output to Output Isolation
Input 0.1 dB Compression Point
IIP3
Switching Speed
1
Voltage Rating
2
dB
dBm
dBm
ns
V
—
—
—
—
80
1. Typical Switching Speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers.
2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 µA maximum @ -80 volts.
Absolute Maximum Ratings
3,4,5
Parameter
RF CW Incident Power
2 GHz
20 GHz
Applied Reverse Voltage
Junction Temperature
Operating Temperature
Storage Temperature
Handling Procedures
Please observe the following precautions to avoid
damage:
Absolute Maximum
38 dBm
33 dBm
|-80 V|
+175°C
-65°C to +125°C
-65°C to +150°C
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 1A HBM
devices.
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. MACOM does not recommend sustained operation near these
survivability limits.
5. Combined maximum operating conditions for RF power, DC
bias, & temperature: 33 dBm CW, 20 mA per diode, +85ºC.
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0008163
MASW-004103-1365
Silicon SP4T Surface Mount HMIC PIN Diode Switch
50 MHZ - 20 GHz
Typical Performance Curves: 20 mA, -10 V (On-Wafer Probed)
Insertion Loss
0.0
J1 TO
J1 TO
J1 TO
J1 TO
J2
J3
J4
J5
Rev. V6
Isolation
0
J1 TO
J1 TO
J1 TO
J1 TO
J2
J3
J4
J5
Insertion Loss (dB)
-0.5
-20
Isolation (dB)
-40
-1.0
-60
-1.5
-80
-2.0
0
5
10
15
20
25
-100
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
Input Return Loss
0
J1 TO
J1 TO
J1 TO
J1 TO
J2
J3
J4
J5
Output Return Loss
0
J1 TO
J1 TO
J1 TO
J1 TO
J2
J3
J4
J5
-10
Output Return Loss (dB)
25
Input Return Loss (dB)
-10
-20
-20
-30
-30
-40
0
5
10
15
20
-40
0
5
10
15
20
25
Frequency (GHz)
Frequency (GHz)
Output to Output Isolation
0
Maximum Input Power,
Baseplate Temperature fixed @ 25°C
12
J2 TO J3
Output to Output Isolation (dB)
10
-20
J4 TO J5
Input Power (W)
8
2 GHz, 6.4 W
-40
6
4
2
10 GHz, 3.1 W
20 GHz, 2 W
-60
-80
0
5
10
15
20
25
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
3
Frequency (GHz)
Insertion Loss (dB)
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0008163
MASW-004103-1365
Silicon SP4T Surface Mount HMIC PIN Diode Switch
50 MHZ - 20 GHz
Bias Control
Optimal operation of the MASW-004103-1365 is achieved by simultaneous application of negative DC voltage
and current to the low loss switching arm and positive DC voltage and current to the remaining switching arms
as shown in the applications circuit below. DC return is achieved via R2 on the RFC path. In the low loss state,
the series diode must be forward biased with current and the shunt diode reverse biased with voltage. In the
isolated arm, the shunt diode is forward biased with current and the series diode is reverse biased with voltage.
Rev. V6
Driver Connections
Control Level (DC Currents and Voltages)
B2
B3
B4
B5
J1-J2
Low Loss
Isolation
Isolation
Isolation
Condition of RF Output
J1-J3
Isolation
Low Loss
Isolation
Isolation
J1-J4
Isolation
Isolation
Low Loss
Isolation
J1-J5
Isolation
Isolation
Isolation
Low Loss
-15 V at -20 mA
6
+6 V at +20 mA +6 V at +20 mA +6 V at +20 mA
+6 V at +20 mA -15 V at -20 mA
6
+6 V at +20 mA +6 V at +20 mA
+6 V at +20 mA +6 V at +20 mA -15 V at -20 mA
6
+6 V at +20 mA
+6 V at +20 mA +6 V at +20 mA +6 V at +20 mA -15 V at -20 mA
6
6. The voltage applied to the off arm is allowed to vary provided a constant current is applied through the shunt diode on the off arm.
Application Circuit
7,8,9,10,11
Example:
J1 to J2→ Low Loss
R1 = 250
Ω
R2 = 450
Ω
B2 = -15 V
B3, B4, B5 = 6 V
7.
8.
9.
10.
11.
4
Assume V
F
~ 1 V @ 20 mA
R1 = 5 V / 0.02 A = 250
Ω;
R2 = 9 V / 0.02 A = 450
Ω
P
R1
= 0.02 A x 0.02 A x 250 = 0.1 W
P
R2
= 0.02 A x 0.02 A x 450 = 0.18 W
Inductors shown in the above schematic are RF bias chokes. The operating bandwidth of a broad-band PIN diode switch is often
dependent on the bias components, particularly the RF bias chokes. It is suggested that the response at the frequencies of interest be
measured with all the bias components in place prior to installing of MASW-004103-1365.
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0008163
MASW-004103-1365
Silicon SP4T Surface Mount HMIC PIN Diode Switch
50 MHZ - 20 GHz
Outline Drawing and Footprint (All dimensions in µm)
12,13,14,15
Rev. V6
DC & RF GND
12.
13.
14.
15.
Bottom view shows the back metal foot print and mounting pads.
All dimension are +/-0.5 µm.
Ground radius is 200 µm and centered on the I/O Pad.
The center pad shown on the chip bottom view must be connected to RF and DC ground.
Dimensions
DIM
Width
Length
Thickness
Inches
Min.
0.06220
0.08740
0.00394
Max.
0.06417
0.08937
0.00591
Min.
1.580
2.220
0.100
mm
Max.
1.630
2.270
0.150
5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
