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SGA-4563

产品描述DC-2500 mhz, cascadable sige hbt mmic amplifier
文件大小254KB,共5页
制造商SIRENZA MICRODEVICES
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SGA-4563概述

DC-2500 mhz, cascadable sige hbt mmic amplifier

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Product Description
The SGA-4563 is a high performance SiGe HBT MMIC Amplifier.
A Darlington configuration featuring 1 micron emitters provides
high FT and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only 2 DC-blocking capacitors, a bias resistor and an
optional RF choke are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
blocking capacitors, a bias resistor and an optional RF choke are
required for operation.
Gain & Return Loss vs. Frequency
V
D
= 3.5 V, I
D
= 45 mA (Typ.)
SGA-4563
SGA-4563Z
Pb
RoHS Compliant
&
Green
Package
DC-2500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 20.2 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
32
GAIN
0
-10
Return Loss (dB)
24
Gain (dB)
ORL
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
16
IRL
-20
-30
-40
0
1
2
3
4
Frequency (GHz)
5
6
8
0
Symbol
G
Parameter
Small Signal Gain
Units
dB
Frequency
850 MHz
1950 MHz
2400 Mhz
850 MHz
1950 MHz
850 MHz
1950 MHz
Min.
Typ.
25.6
20.2
18.6
15.0
12.8
27.1
26.2
2500
Max.
P
1dB
OIP
3
Output Pow er at 1dB Compression
Output Third Order Intercept Point
dBm
dBm
MHz
dB
dB
dB
V
mA
°C/W
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
,
j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8 V
R
BIAS
= 100 Ohms
1950 MHz
1950 MHz
1950 MHz
19.9
10.1
2.4
3.6
41
45
255
49
Test Conditions:
I
D
= 45 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -10 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
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