RN2607~RN2609
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2607,RN2608,RN2609
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
Including two devices in SM6 (super mini type with 6 leads)
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1607~RN1609
Unit in mm
Equivalent Circuit andBias Resistor Values
Type No.
RN2607
RN2608
RN2609
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
―
―
2-3N1A
Eauivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2607~RN2609
RN2607
Emitter-base voltage
RN2608
RN2609
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
I
C
P
C
*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
300
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
*
Total rating
1
2001-06-05
RN2607~RN2609
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
°
Characteristic
Collector cut-off
current
RN2607~RN2609
RN2607
Emitter cut-off
current
RN2608
RN2609
RN2607
DC current gain
RN2608
RN2609
Collector-emitter
saturation voltage
RN2607~RN2609
RN2607
Input voltage (ON)
RN2608
RN2609
RN2607
Input voltage (OFF)
RN2608
RN2609
Translation
frequency
Collector output
capacitance
RN2607~RN2609
RN2607~RN2609
RN2607
Input resistor
RN2608
RN2609
RN2607
Resistor ratio
RN2608
RN2609
R1/R2
R1
f
T
C
ob
V
I (OFF)
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0
f = 1MHz
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−0.2V,
I
C
=
−5mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−5V,
I
C
=
−10mA
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
V
EB
=
−6V,
I
C
= 0
V
EB
=
−7V,
I
C
= 0
V
EB
=
−15V,
I
C
= 0
Min
―
―
−0.081
−0.078
−0.167
80
80
70
―
−0.7
−1.0
−2.2
−0.5
−0.6
−1.5
―
―
7
15.4
32.9
0.191
0.421
1.92
Typ.
―
―
―
―
―
―
―
―
−0.1
―
―
―
―
―
―
200
3
10
22
47
0.213
0.468
2.14
Max
−100
−500
−0.15
−0.145
−0.311
―
―
―
−0.3
−1.8
−2.6
−5.8
−1.0
−1.16
−2.6
―
6
13
28.6
61.1
0.232
0.515
2.35
―
kΩ
MHz
pF
V
V
V
―
mA
Unit
nA
nA
2
2001-06-05