GT40T301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mm
•
•
•
•
FRD included between emitter and collector
Enhancement-mode
High speed IGBT : t
f
= 0.25 µs (typ.) (I
C
= 40 A)
FRD : t
rr
= 0.7 µs (typ.) (di/dt =
−20
A/µs)
Low saturation voltage: V
CE (sat)
= 3.7 V (typ.) (I
C
= 40 A)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
I
ECF
I
ECPF
P
C
T
j
T
stg
Rating
1500
±25
40
80
30
80
200
150
−55~150
Unit
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-21F2C
Collector power dissipation (Tc
=
25°C)
Junction temperature
Storage temperature range
Weight: 9.75 g (typ.)
Equivalent Circuit
Collector
Gate
Emitter
1
2002-01-18
GT40T301
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Emitter-collector forward voltage
Reverse recovery time
Thermal resistance
Symbol
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
r
t
on
t
f
t
off
V
ECF
t
rr
R
th (j-c)
15
Ω
51
Ω
15 V
0
−15
V
I
ECF
=
30 A, V
GE
=
0
I
ECF
=
30 A, V
GE
=
0, di/dt
= −20
A/µs
IGBT
Diode
Test Condition
V
GE
= ±25
V, V
CE
=
0
V
CE
=
1500 V, V
GE
=
0
I
C
=
40 mA, V
CE
=
5 V
I
C
=
40 A, V
GE
=
15 V
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
Min
4.0
Typ.
3.7
2900
0.40
0.45
0.23
0.6
1.9
0.7
Max
±500
1.0
7.0
5.0
Unit
nA
mA
V
V
pF
0.40
µs
600 V
2.5
3.0
0.625
1.25
V
µs
°C/W
2
2002-01-18
GT40T301
I
C
– V
CE
100
25
80
20
15
10
Common emitter
V
CE
– V
GE
(V)
12
Tc
= −40°C
8
60
6
20
4
80
40
(A)
60
40
10
Collector-emitter voltage V
CE
Collector current
I
C
20
VGE
=
8 V
0
0
2
4
6
8
10
2
IC
=
10 A
0
0
4
8
12
16
20
Collector-emitter voltage V
CE
(V)
Gate-emitter voltage
V
GE
(V)
V
CE
– V
GE
10
Common emitter
10
Tc
=
25°C
8
V
CE
– V
GE
(V)
(V)
8
Collector-emitter voltage V
CE
Collector-emitter voltage V
CE
80
6
60
40
4
20
2
Common emitter
Tc
=
125°C
0
0
6
60
4
40
20
IC
=
10 A
80
2
IC
=
10 A
0
0
4
8
12
16
20
4
8
12
16
20
Gate-emitter voltage
V
GE
(V)
Gate-emitter voltage
V
GE
(V)
I
C
– V
GE
100
Common emitter
80
10
V
CE (sat)
– Tc
Common emitter
Collector-emitter saturation voltage
V
CE (sat)
(V)
VCE
=
5 V
VGE
=
15 V
8
I
C
(A)
60
6
Collector current
80
60
40
25
20
Tc
=
125°C
−40
0
0
4
8
12
16
20
4
40
20
2
IC
=
10 A
0
−80
−40
0
40
80
120
160
Gate-emitter voltage
V
GE
(V)
Case temperature Tc
(°C)
3
2002-01-18
GT40T301
V
CE
, V
GE
– Q
G
10
Switching time – R
G
Common
Common emitter
emitter
RL
=
7.5
Ω
Tc
=
25°C
VCC
=
600 V
IC
=
40 A
VGG
= ±15
V
Tc
=
25°C
Collector-emitter voltage V
CE
(×10 V)
Gate-emitter voltage V
GE
(V)
(µs)
30
5
3
Switching time
20
1
0.5
0.3
toff
ton
tr
10
200
300
tf
VCE
=
100 V
0
0
40
80
120
160
200
240
280
0.1
1
3
5
10
30 50
100
300 500 1000
Gate charge
Q
G
(nC)
Gate
resistance R
G
(Ω)
Switching time – I
C
10
5
3
Common emitter
VCC
=
600 V
RG
=
51
Ω
VGG
= ±15
V
Tc
=
25°C
10000
5000
3000
C – V
CE
Cies
(µs)
(pF)
ton
tr
1000
500
300
Coes
100
50
30
10
5
3
1
1
Common emitter
VGE
=
0 V
f
=
1 MHz
Tc
=
25°C
Cres
1
0.5
0.3
toff
Switching time
tf
0.1
0.05
0.03
0.01
0
10
20
30
40
50
Capacitance
C
3
5
10
30
50
100
Collector current
I
C
(A)
Collector-emitter voltage V
CE
(V)
Safe operating area
300
IC max (pulsed)*
200
10 ms*
1 ms*
10
µs*
IC max
(continuous)
100
µs*
100
Reverse bias SOA
(A)
100
50
30
I
C
Collector current
I
C
Collector current
(A)
30
10
Tj
<
125°C
=
VGE
= ±15
V
RG
=
51
Ω
3
10
30
100
300
1000
3000
3000
10
5
DC operation
3
*:
Single nonrepetitive
pulse
Tc
=
25°C
1 Curves must be derated
linearly with increase in
0.5
temperature.
0.3
1
3
10
30
100
300
1000
Collector-emitter voltage V
CE
(V)
Collector-emitter voltage V
CE
(V)
4
2002-01-18
GT40T301
10
1
R
th (t)
– t
w
100
I
ECF
– V
ECF
Common collector
Emitter-collector forward current
I
ECF
(A)
Transient thermal impedance
R
th (t)
(°C/W)
10
0
Diode
IGBT
80
60
Tc
=
40°C
25
10
−
1
40
125
20
2
10
−
3
10
−
Tc
=
25°C
4
10
−
3
10
−
2
10
−
1
10
−
10
0
10
1
10
2
0
0
1
2
3
4
5
5
10
−
Pulse width
t
w
(s)
Emitter-collector forward voltage
V
ECF
(V)
I
rr
, t
rr
– I
ECF
2.5
20
1.0
100
I
rr
, t
rr
– di/dt
(A)
Common collector
Common collector
80
IECF
=
30 A
Tc
=
25°C
(A)
(µs)
I
rr
Tc
=
25°C
Peak reverse recovery current
1.5
12
Irr
8
trr
4
0.6
Peak reverse recovery current
t
rr
Reverse recovery time
Reverse recovery time
t
rr
I
rr
2.0
16
(µs)
di/dt
= −20
A/µs
0.8
60
trr
40
1.0
0.4
0.5
0.2
20
Irr
0
0
0
20
40
60
80
100
0
0
0
40
80
120
160
200
240
Emitter-collector forward current
I
ECF
(A)
di/dt
(A/µs)
5
2002-01-18
微控制器 MCU
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