Philips Semiconductors
Product specification
1GHz LNA and mixer
NE/SA600
AC ELECTRICAL CHARACTERISTICS
1,2
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
–3σ
TYP
+3σ
UNITS
LNA
(V
CC
= V
CCMX
= +5V, T
A
= 25
°
C; Enable = Hi, Test Figure 1, unless otherwise stated.)
S
21
S
21
∆S
21
/∆T
∆S
21
/∆T
∆S
21
/∆f
S
12
S
11
S
22
P
-1dB
IP
3
Amplifier gain
Amplifier gain in thru mode
Gain temperature sensitivity enabled
Gain temperature sensitivity in thru mode
Gain frequency variation
Amplifier reverse isolation
Amplifier input
match
3
Amplifier output match
Amplifier input 1dB gain compression
Amp input 3rd-order intercept
Amp input 3rd-order intercept (thru mode)
Amplifier noise figure
NF
t
ON
t
OFF
Amp noise figure w/shunt 15nH inductor
at input
Amplifier turn-on time
Amplifier turn-off time
900MHz
Enable = LO, 900MHz
900MHz
Enable = LO, 900MHz
800MHz - 1.2GHz
900MHz
900MHz
900MHz
900MHz
Test Fig. 2, 900MHz
Test Fig. 2, 900MHz, Enable = LO
900MHz
900MHz
Enable Lo
→
Hi
Enable Hi
→
Lo
Coupling = 100pF
Coupling = 0.01µF
Coupling = 100pF
Coupling = 0.01µF
1.9
1.7
–47
–11
–16.8
–21.2
–11.6
14.9
–9.0
16
-7.5
-0.008
-0.014
-0.014
-42
-10
-15
-20
-10
+26
2.2
2.0
30
3
10
1
2.5
2.3
–37
–9
–13.2
–18.8
–8.6
17.1
–6.0
dB
dB
dB/°C
dB/°C
dB/MHz
dB
dB
dB
dBm
dBm
dBm
dB
dB
µs
ms
µs
ms
Mixer
(V
CC
= V
CCMX
= +5V, T
A
= 25°C, Enable = Hi, f
LO
= 1GHz @ 0dBm, f
RF
= 900MHz, f
IF
= 100MHz, Test Fig. 1, unless otherwise stated)
VG
C
PG
C
S
11RF
NF
M
P
-1dB
IP
3INT
IP
2INT
G
RFM-IF
G
LO-IF
G
LO-RFM
S
11LO
G
LO-RF
Mixer voltage conversion gain
Mixer power conversion gain
Mixer input match
Mixer SSB noise figure
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
Mixer LO feedthrough
Local oscillator to mixer input feedthrough
LO input match
Local oscillator to RF input feedthrough
R
L1
= R
L2
= 1kΩ
R
L1
= R
L2
= 1kΩ
900MHz
Test Fig. 3, 900MHz, f
IF
= 80MHz
900MHz
900MHz
900MHz
900MHz, C
IF
= 3pF
900MHz, C
IF
= 3pF
900MHz
900MHz
900MHz
900MHz
–24
9.5
–3.05
–23
12.2
–5.3
+5
+18
10.4
–2.6
-20
14
-4
+6
+20
–7
-10
-33
–20
-46
-39
–16
11.3
–2.15
–17
15.8
–2.7
+7
+22
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
G
RFO-RFM
Filter feedthrough
LNA + Mixer
(V
CC
=V
CCMX
=+5V, T
A
=25°C, Enable=Hi, f
LO
=1GHz @ 0dBm, f
RF
= 900MHz, f
IF
= 100MHz, Test Fig. 1, unless otherwise
stated)
PG
C
NF
IP
3
Overall power conversion gain
Overall noise figure
Overall input 3rd-order intercept
13.4
3.5
–13
dB
dB
dBm
NOTE:
1. All meausrements include the effects of the NE/SA600 Evaluation Board (see Figure ) unless otherwise noted. Measurement system
impedance is 50Ω.
2. Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
3. With a shunt 15nH inductor at the input of the LNA, the value of S
11
is typically –15dB.
1993 Dec 15
49
Philips Semiconductors
Product specification
1GHz LNA and mixer
NE/SA600
NOTE: All performance curves include the effects of the NE/SA600 evaluation board.
LNA S21 CHARACTERISTICS
4.5V
≤
V
CC
= V
CCMX
≤
5.5V, Test Figure 1, unless otherwise specified.
LNA S21 vs Frequency
40
20
LNA S21 vs Frequency
30
ENABLE=HI
S21 MAGNITUDE (dB)
S21 MAGNITUDE (dB)
20
15
ENABLE=HI
10
10
5
0
0
–10
ENABLE=LO
–5
ENABLE=LO
–20
10
100
FREQUENCY (MHz)
1000
2000
–10
800
900
1000
1100
FREQUENCY (MHz)
1200
LNA S21 Phase vs Frequency
0
18
LNA S21 vs Frequency and V
CC
–20
17.5
–40
S21 MAGNITUDE (dB)
S21 PHASE (Deg)
17
–60
16.5
–80
16
–100
15.5
V
CC
= 4.5V
V
CC
= 5.0V
V
CC
= 5.5V
–120
800
900
1000
1100
FREQUENCY (MHz)
1200
15
800
900
FREQUENCY (MHz)
1000
LNA S21 vs Frequency and Temperature
20
18
–40°C
16
S21 MAGNITUDE (dB)
S21 MAGNITUDE (dB)
14
25°C
12
10
8
6
4
2
0
800
900
1000
1100
1200
FREQUENCY (MHz)
85°C
LNA Thru S21 vs Frequency and Temperature
0
–2
–4
–6
–40°C
–8
25°C
–10
85°C
–12
800
900
1000
FREQUENCY (MHz)
1100
1200
SR00085
Figure 4. LNA S21 Performance Characteristics
1993 Dec 15
51
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