Freescale Semiconductor
Technical Data
Document Number: MRF1517N
Rev. 6, 6/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large- signal, common source amplifier applications in 7.5 volt
portable FM equipment.
D
•
Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 14 dB
Efficiency — 70%
•
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Features
•
Characterized with Series Equivalent Large - Signal
G
Impedance Parameters
•
Excellent Thermal Stability
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
S
•
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
MRF1517NT1
520 MHz, 8 W, 7.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
(1)
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
(2)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +25
±
20
4
62.5
0.50
- 65 to +150
150
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(3)
2
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
°C
1. Not designed for 12.5 volt applications.
T
T
2. Calculated based on the formula P
D
= J – C
R
θJC
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF1517NT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 35 Vdc, V
GS
= 0)
Gate - Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0)
On Characteristics
Gate Threshold Voltage
(V
DS
= 7.5 Vdc, I
D
= 120
μAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
Drain Efficiency
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
G
ps
η
—
—
14
70
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
66
38
6
—
—
—
pF
pF
pF
V
GS(th)
V
DS(on)
g
fs
1
—
—
1.7
0.5
0.9
2.1
—
—
Vdc
Vdc
S
I
DSS
I
GSS
—
—
—
—
1
1
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
MRF1517NT1
2
RF Device Data
Freescale Semiconductor
V
GG
C9
C8
+
C7
R3
B1
R2
C18
B2
C17
C16
+
C15
V
DD
L1
C6
R1
Z6
N1
RF
INPUT
C1
C2
C3
C4
C5
DUT
Z1
Z2
Z3
Z4
Z5
C10
C11
C12
C13
Z7
Z8
Z9
Z10
C14
N2
RF
OUTPUT
B1, B2
C1
C2, C3, C4, C10,
C12, C13
C5, C11
C6, C18
C7, C15
C8, C16
C9, C17
C14
L1
N1, N2
Short Ferrite Beads, Fair Rite Products
(2743021446)
300 pF, 100 mil Chip Capacitor
0 to 20 pF, Trimmer Capacitors
43 pF, 100 mil Chip Capacitors
120 pF, 100 mil Chip Capacitors
10
μF,
50 V Electrolytic Capacitors
0.1
μF,
100 mil Chip Capacitors
1,000 pF, 100 mil Chip Capacitors
330 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
R1
R2
R3
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
15
Ω,
0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.315″ x 0.080″ Microstrip
1.415″ x 0.080″ Microstrip
0.322″ x 0.080″ Microstrip
0.022″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.050″ x 0.080″ Microstrip
0.625″ x 0.080″ Microstrip
0.800″ x 0.080″ Microstrip
0.589″ x 0.080″ Microstrip
Glass Teflon
®
, 31 mils, 2 oz. Copper
Figure 1. 480 - 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 480 - 520 MHz
10
Pout , OUTPUT POWER (WATTS)
0
500 MHz
480 MHz
520 MHz
IRL, INPUT RETURN LOSS (dB)
−5
8
6
−10
520 MHz
480 MHz
4
−15
500 MHz
−20
V
DD
= 7.5 Vdc
−25
2
V
DD
= 7.5 Vdc
0
0
0.2
0.4
0.6
P
in
, INPUT POWER (WATTS)
0.8
1.0
1
2
3
4
5
6
7
8
P
out
, OUTPUT POWER (WATTS)
9
10
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss versus
Output Power
MRF1517NT1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 480 - 520 MHz
18
500 MHz
16
520 MHz
14
GAIN (dB)
12
10
8
V
DD
= 7.5 Vdc
6
1
2
3
4
5
6
7
8
P
out
, OUTPUT POWER (WATTS)
9
10
10
1
2
3
5
6
7
8
4
P
out
, OUTPUT POWER (WATTS)
9
10
11
Eff, DRAIN EFFICIENCY (%)
480 MHz
70
60
50
40
30
20
V
DD
= 7.5 Vdc
520 MHz
500 MHz
480 MHz
80
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
12
Pout , OUTPUT POWER (WATTS)
10
8
520 MHz
6
4
2
0
0
200
400
600
I
DQ
, BIASING CURRENT (mA)
800
1000
P
in
= 27 dBm
V
DD
= 7.5 Vdc
480 MHz
500 MHz
80
70
480 MHz
500 MHz
60
520 MHz
50
P
in
= 27 dBm
V
DD
= 7.5 Vdc
0
200
400
600
I
DQ
, BIASING CURRENT (mA)
800
1000
Eff, DRAIN EFFICIENCY (%)
40
30
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus Biasing Current
12
Pout , OUTPUT POWER (WATTS)
10
8
6
480 MHz
4
2
0
5
6
7
8
9
10
V
DD
, SUPPLY VOLTAGE (VOLTS)
P
in
= 27 dBm
I
DQ
= 150 mA
500 MHz
520 MHz
Eff, DRAIN EFFICIENCY (%)
80
70
500 MHz
60
520 MHz
50
480 MHz
40
P
in
= 27 dBm
I
DQ
= 150 mA
5
6
7
8
9
10
30
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1517NT1
4
RF Device Data
Freescale Semiconductor
V
GG
C8
C7
+
C6
R3
B1
R2
C17
B2
+
C16
C15
C14
V
DD
L1
C5
R1
Z5
N1
RF
INPUT
C1
C2
C3
C4
DUT
Z1
Z2
Z3
Z4
C10
C9
C11
C12
Z6
Z7
Z8
Z9
C13
N2
RF
OUTPUT
B1, B2
C1, C13
C2, C3, C4, C10,
C11, C12
C5, C17
C6, C14
C7, C15
C8, C16
C9
L1
N1, N2
Short Ferrite Beads, Fair Rite Products
(2743021446)
300 pF, 100 mil Chip Capacitors
0 to 20 pF, Trimmer Capacitors
130 pF, 100 mil Chip Capacitors
10
μF,
50 V Electrolytic Capacitors
0.1
μF,
100 mil Chip Capacitors
1,000 pF, 100 mil Chip Capacitors
33 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
R1
R2
R3
Z1
Z2
Z3
Z4, Z5
Z6
Z7
Z8
Z9
Board
12
Ω,
0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.617″ x 0.080″ Microstrip
0.723″ x 0.080″ Microstrip
0.513″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.048″ x 0.080″ Microstrip
0.577″ x 0.080″ Microstrip
1.135″ x 0.080″ Microstrip
0.076″ x 0.080″ Microstrip
Glass Teflon
®
, 31 mils, 2 oz. Copper
Figure 10. 400 - 440 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 400 - 440 MHz
10
9
Pout , OUTPUT POWER (WATTS)
8
7
6
5
4
3
2
1
0
0
0.1
0.2
0.3
P
in
, INPUT POWER (WATTS)
0.4
0.5
V
DD
= 7.5 Vdc
−25
1
2
3
4
5
6
7
P
out
, OUTPUT POWER (WATTS)
8
9
10
420 MHz
440 MHz
400 MHz
IRL, INPUT RETURN LOSS (dB)
−5
400 MHz
420 MHz
−15
440 MHz
0
−10
−20
V
DD
= 7.5 Vdc
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss versus Output Power
MRF1517NT1
RF Device Data
Freescale Semiconductor
5
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