+85 C for REF01CP and REF01CS, unless otherwise noted.)
Min
REF01C
Typ
Max
0.14
20
0.45
65
Unit
%
ppm/°C
Conditions
R
P
= 10 kΩ
V
IN
= 13 V to 30 V
I
L
= 0 to 5 mA
0.7
0.011
0.008
0.018
0.018
ppm/%
%/V
%/mA
NOTES
1
Sample tested.
2
Line and load regulation specifications include the effect of self-heating.
3
Guaranteed by design.
4
During sink current test the device meets the output voltage specified.
5
V
OT
is defined as the absolute difference between the maximum output voltage and the minimum
output voltage over the specified temperature range expressed as a percentage of 10 V:
∆V
OT
=
6
V
MAX
–
V
MIN
10
V
×
100
V
OT
specification applies trimmed to +10,000 V or untrimmed.
TCV
O
is defined as Var divided by the temperature range, i.e.
7
TCV
O
0
to
+
70
C
=
(
(
o
o
)
∆
V
OT
0
o
to
+
70
o
C
70
C
o
(
)
and
)
TCV
O
−
55
to
+
125
C
=
Specifications are subject to change without notice.
15V
2
V
IN
V
O
6
OUTPUT
o
o
)
∆
V
OT
−
55
o
to
+
125
o
C
180
o
C
(
The REF01 trim terminal can be used to adjust the output
voltage over a 10 V
±
300 mV range. This feature allows the
system designer to trim system errors by setting the reference to
a voltage other than 10 V. Of course, the output can also be set
to exactly 10.000 V or to 10.240 V for binary applications.
Adjustment of the output does not significantly affect the tem-
perature performance of the device. The temperature coefficient
change is approximately 0.7 ppm/°C for 100 mV of output
adjustment.
REF01
TRIM
GND
4
5
10k
2
6
Figure 1. Output Adjustment
2. INPUT VOLTAGE (V
IN
)
4. GROUND
5. TRIM
6. OUTPUT VOLTAGE (V
OUT
)
+18V
V
IN
4
5
REF01
DIE SIZE 0.074 0.048 INCH, 3552 SQUARE MILS
(1.88 1.22 mm, 2.29 SQUARE mm)
GND
–18V
Figure 3. Dice Characteristics (125
C
Tested Dice Available)
Figure 2. Burn-In Circuit
REV. C
–3–
REF01
WAFER TEST LIMITS
Parameter
Output Voltage
Output Adjustment
Range
Line Regulation
Symbol
V
O
V
TRIM
(@ V
IN
= 15 V, T
A
= 25 C for REF01N and REF01G devices, T
A
= 125 C for REF01NT and REF01GT devices,
unless otherwise noted.)*
Conditions
I
L
= 0
R
P
= 10 kΩ
V
IN
= 13 V to 33 V
REF01NT
Limit
10.05
9.95
REF01N
Limit
10.03
9.97
±
3.0
0.01
REF01GT
Limit
10.10
9.90
REF01G
Limit
10.05
9.95
±
3.0
0.01
Unit
V max
V min
% min
%/V max
0.015
0.015
*Electrical
tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
TYPICAL ELECTRICAL CHARACTERISTICS
(@ V
Parameter
Load Regulation
Symbol
Conditions
I
L
= 0 mA to 10 mA
I
L
= 0 mA to 8 mA,
NT, GT @ 125°C
e
n p-p
t
ON
I
SY
I
L
I
S
I
SC
TCV
O
V
O
= 0
0.1 Hz to 10 Hz
To
±
0.1% of Final
Value NT, GT @
125°C
No Load, NT,
GT @ 125°C
IN
= 15 V, T
A
= 25 C, unless otherwise noted.)*
REF01N
Typical
REF01GT
Typical
REF01G
Typical
Unit
REF01NT
Typical
0.007
20
0.005
20
0.009
20
0.006
20
%/mA
µV
p-p
µs
mA
mA
mA
mA
Output Voltage
Noise
Turn-On Settling
Time
Quiescent Current
Load Current
Sink Current
Short Circuit
Current
Output Voltage
Temperature
Coefficient
7.5
1.4
21
–0.5
30
5.0
1.0
21
–0.5
30
7.5
1.4
21
–0.5
30
5.0
1.0
21
–0.5
30
10
10
10
10
ppm/°C
*For
25°C specifications of REF01NT and REF01GT, see REF01N and REF01G, respectively.
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