Plastic Infrared Emitting Diode
OP266FAA Series
Features:
•
•
•
•
•
T-1 (3 mm) package style
Narrow irradiance pattern
Dome lens
Higher power output than GaAs at equivalent drive currents
850 nm diode
Description:
Each device in the
OP266FAA
series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is
molded in an IR transmissive clear or amber-tinted epoxy package with a dome lens. Devices feature a narrow
source irradiance pattern and a variety of electrical characteristics. The small T-1 package style makes these
devices ideal for space-limited applications.
These devices are mechanically and spectrally matched to other OPTEK products as follows:
OP266 devices conform to the OP506 and OP535 series devices.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
•
Space-limited applications
•
Applications requiring coupling efficiency
•
Battery-operated or voltage-limited
applications
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
Ordering Information
Part
Number
OP266FAA
OP266FAB
OP266FAC
OP266FAD
NOTES:
1.
2.
3.
4.
Outside discrete shell is polysulfone CLEAR.
This LED is built with a 0.011 X 0.011 GaAlAs chip.
Max allowable epoxy miniscus is 0.030”.
For identification purposes, Cathode lead is .065” ± .035”
longer than the anode lead.
DISCRETE PIN OUT
1
2
CATHODE
ANODE
2
LED Peak
Wavelength
Output Power (mW/
cm
2
) Min / Max
5.5 / NA
I
F
(mA)
Typ / Max
Total Beam
Angle
Lead
Length
850 nm
7.5 / 12.5
11.5 / 16.5
15.5 / NA
20 / 50
18°
0.50”
1
Pin #
1
2
LED
Cathode
Anode
CONTAINS POLYSULFONE
To avoid stress cracking, we suggest using
ND Industries’
Vibra-Tite
for thread-locking.
Vibra-Tite
evaporates fast without causing structural
failure in OPTEK'S molded plastics.
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A
10/2010
Page 1 of 3
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Plastic Infrared Emitting Diode
OP266FAA Series
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Storage and Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current (1 µs pulse width, 300 pps)
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
-40
o
C to +100
o
C
2.0 V
50 mA
3.0 A
260° C
(1)
100 mW
(2)
Notes:
1. RMA flux is recommended. Duration can be extended to 10 second maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. E
E(APT)
is a measurement of the average apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular
to and centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. E
E(APT)
is not necessarily
uniform within the measured area.
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
SYMBOL
Input Diode
Apertured Radiant Incidence
OP266FAA
OP266FAB
OP266FAC
OP266FAD
Forward Voltage
Reverse Current
Wavelength at Peak Emission
Spectral Shift with Temperature
Emission Angle at Half Power Points
Output Rise Time
Output Fall Time
5.50
7.50
11.50
15.50
-
-
-
-
-
-
-
-
-
-
-
-
10
850
±0.18
18
10
10
-
12.5
16.5
-
1.80
-
-
-
-
-
-
I
F
= 20 mA
Aperture = 0.081” diameter
Distance = 0.590” from seating
surface to aperture surface
I
F
= 20 mA
V
R
= 10 V
I
F
= 10 mA
I
F
= Constant
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
E
E (APT)
mW/cm
2
V
F
I
R
λ
P
∆λ
P
/∆T
θ
HP
t
r
t
f
V
µA
nm
nm/°C
Degree I
F
= 20 mA
ns
ns
I
F(PK)
=100 mA, PW=10 µs, D.C.=10.0%
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A
10/2010
Page 2 of 3
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Plastic Infrared Emitting Diode
OP266FAA Series
OP266F (AA, AB, AC, AD)
Forward Voltage vs Forward Current vs
Temperature
1.8
1.7
1.6
3.5
Normalized at 50 mA and 20° C
3.0
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
Optical Power vs I
F
vs Temperature
Typical Forward Voltage (V)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
10
20
30
40
50
60
70
80
90
100
Forward Current (mA)
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
Normalized Optical Power
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
70
80
90
100
Forward Current I
F
(mA)
Distance vs Output Power vs Forward Current
6
Normalized at 1" and 50 mA
Relative Radiant Intensity vs. Angular
Displacement
1.0
0.9
5
Forward Current
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
90 mA
100 mA
0.8
Relative Radiant Intensity
0.7
0.6
0.5
0.4
0.3
0.2
Normalized Output Power
4
3
2
1
0.1
0
0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''
0.0
-20
-15
-10
-5
0
5
10
15
20
Distance (inches)
Angular Displacement (Degrees)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A
10/2010
Page 3 of 3
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