DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D050
1N821 to 1N829
1N821A to 1N829A
Voltage reference diodes
Product specification
Supersedes data of March 1991
1996 Mar 20
Philips Semiconductors
Product specification
Voltage reference diodes
FEATURES
•
Temperature compensated
•
Reference voltage range:
5.89 to 6.51 V (typ. 6.20 V)
•
Low temperature coefficient range:
max. 0.0005 to 0.01 %/K.
k
handbook, halfpage
1N821 to 1N829
1N821A to 1N829A
DESCRIPTION
Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass
package.
a
MAM216
APPLICATION
•
Voltage reference sources in
measuring instruments such as
digital voltmeters.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
Z
P
tot
T
stg
T
j
T
amb
PARAMETER
working current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
= 50
°C
CONDITIONS
MIN.
−
−
−65
−
−55
MAX.
50
400
+200
200
+100
UNIT
mA
mW
°C
°C
°C
1996 Mar 20
2
Philips Semiconductors
Product specification
Voltage reference diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
ref
∆V
ref
PARAMETER
reference voltage
reference voltage excursion
1N821; 1N821A
1N823; 1N823A
1N825; 1N825A
1N827; 1N827A
1N829; 1N829A
S
Z
temperature coefficient
1N821; 1N821A
1N823; 1N823A
1N825; 1N825A
1N827; 1N827A
1N829; 1N829A
r
dif
differential resistance
1N821 to 1N829
1N821A to 1N829A
Notes
I
Z
= 7.5 mA; see Fig.4
−
−
I
Z
= 7.5 mA: see Fig.3;
notes 1 and 2
CONDITIONS
I
Z
=7.5 mA
I
Z
=7.5 mA; test points for
T
amb
:
−55;
+25; +75; +100
°C;
see Fig.2; notes 1 and 2
MIN.
5.89
−
−
−
−
−
−
−
−
−
−
1N821 to 1N829
1N821A to 1N829A
TYP.
6.20
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
6.51
96
48
19
9
5
0.01
0.005
0.002
0.001
V
UNIT
mV
mV
mV
mV
mV
%/K
%/K
%/K
%/K
0.0005 %/K
15
10
Ω
Ω
1. The quoted values of
∆V
ref
are based on a constant current I
Z
. Two factors can cause
∆V
ref
to change, namely the
differential resistance r
dif
and the temperature coefficient S
Z
.
a) As the max. r
dif
of the device can be 15
Ω,
a change of 0.01 mA in the current through the reference diode will
result in a
∆V
ref
of 0.01 mA
×
15
Ω
= 0.15 mV. This level of
∆V
ref
is not significant on a 1N821 (∆V
ref
< 96 mV),
it is however very significant on a 1N829 (∆V
ref
< 5 mV).
b) The temperature coefficient of the reference voltage S
Z
is a function of I
Z
. Reference diodes are classified at the
specified test current and the S
Z
of the reference diode will be different at different levels of I
Z
. The absolute value
of I
Z
is important, however, the stability of I
Z
, once the level has been set, is far more significant. This applies
particularly to the 1N829. The effect of the stability of I
Z
on S
Z
is shown in Fig.3.
2. All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (∆V
ref
)
over the specified temperature range, at the specified test current (I
Z
), verified by tests at indicated temperature
points within the range. V
Z
is measured and recorded at each temperature specified. The
∆V
ref
between the highest
and lowest values must not exceed the maximum
∆V
ref
given. Therefore the temperature coefficient is only given as
V
ref1
–
V
ref2
100
a reference. It may be derived from: S
Z
=
-------------------------------------
×
------------------- %/K
-
-
T
amb2
–
T
amb1
V
ref nom
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
8 mm from the body
lead length 10 mm
VALUE
300
375
UNIT
K/W
K/W
1996 Mar 20
3
Philips Semiconductors
Product specification
Voltage reference diodes
GRAPHICAL DATA
MBG534
1N821 to 1N829
1N821A to 1N829A
handbook, halfpage
10
(2)
(3)
(1)
handbook, halfpage
IZ
(mA)
7.5
0.002
∆S
Z
(%/K)
0.001
MBG536
0
−0.001
5
(1)
(2)
(3)
−0.002
2.5
-75
-50
-25
0
∆V
ref(max) (mV)
25
50
−0.003
4
5
6
7
8
9
10
IZ (mA)
11
Referenced to I
Z
= 7.5 mA.
(1) T
j
= 100
°C.
(2) T
j
= 25
°C.
(3) T
j
=
−55 °C.
Fig.2
Working current as a function of the
maximum reference voltage excursion.
Fig.3
Temperature coefficient change as a
function of working current; typical values.
10
3
handbook, halfpage
rdif
(Ω)
10
2
MBG535
10
(1)
(2)
(3)
1
1
10
IZ (mA)
10
2
(1) T
j
= 100
°C.
(2) T
j
= 25
°C.
(3) T
j
=
−55 °C.
Fig.4
Differential resistance as a function of
working current; typical values.
1996 Mar 20
4
Philips Semiconductors
Product specification
Voltage reference diodes
PACKAGE OUTLINE
1N821 to 1N829
1N821A to 1N829A
handbook, full pagewidth
0.55
max
1.6
max
25.4 min
3.04
max
25.4 min
MSA212 - 1
Dimensions in mm.
The marking band indicates the cathode.
The diodes are type branded.
Fig.5 SOD68 (DO-34).
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1996 Mar 20
5
NXP MCU
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