Preliminary
Datasheet
BCR10PM-12LA
Triac
Medium Power Use
Features
I
T (RMS)
: 10 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA (20 mA)
Note5
Viso : 2000 V
R07DS0104EJ0300
(Previous: REJ03G0304-0200)
Rev.3.00
Sep 13, 2010
Insulated Type
Planar Passivation Type
UL Recognised : Yellow Card No. E223904
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
2
3
1
1
2
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, hair drier, control of household equipment such as
TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, small motor control, solid state relay,
copying machine, electric tool, electric heater, solenoid driver, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
R07DS0104EJ0300 Rev.3.00
Sep 13, 2010
Page 1 of 7
BCR10PM-12LA
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Ratings
10
100
41.6
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Conditions
Preliminary
Commercial frequency, sine full wave
360° conduction, Tc = 85C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T
1
·T
2
·G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
Note5
30
Note5
30
Note5
—
3.5
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 125C, V
DRM
applied
Tc = 25C, I
TM
= 15 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2.
3.
4.
5.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (I
GT
20 mA) is also available. (I
GT
item: 1)
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0104EJ0300 Rev.3.00
Sep 13, 2010
Page 2 of 7
BCR10PM-12LA
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
100
Rated Surge On-State Current
Surge On-State Current (A)
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
Tj = 125°C
Tj = 25°C
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
10
2
7
5
3
2
V
GM
= 10V
10
1
P
G(AV)
=
7
5
0.5W
3
V
GT
= 1.5V
2
10
0
7
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
Gate Voltage (V)
P
GM
= 5W
I
GM
= 2A
I
RGT I
, I
RGT III
I
FGT I
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.2V
10
–1
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0104EJ0300 Rev.3.00
Sep 13, 2010
Page 3 of 7
BCR10PM-12LA
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Preliminary
Maximum On-State Power Dissipation
16
Transient Thermal Impedance (°C/W)
10
3
On-State Power Dissipation (W)
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
No Fins
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
–1
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
140
Allowable Ambient Temperature vs.
RMS On-State Current
160
120
100
80
60
40
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
All fins are black painted
140
aluminum and greased
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Case Temperature (°C)
120
100
80
360° Conduction
20
Resistive,
inductive loads
0
4
8
0
2
6
10
12
14
16
60
Curves apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural convection
0
4
8
0
2
6
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0104EJ0300 Rev.3.00
Sep 13, 2010
Page 4 of 7
BCR10PM-12LA
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
Preliminary
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
Typical Example
Latching Current (mA)
Distribution
T
2
+, G–
Typical Example
10
1
7
5
3
T
2
+, G+
2
Typical Example
T
2
–, G–
10
0
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
160
140
120
100
80
60
40
20
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Typical Example
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
Typical Example
Tj = 125°C
III Quadrant
0
–60 –40 –20 0 20 40 60 80 100 120 140
I Quadrant
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
7
5
3
2
10
1
7
5
3
2
III Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Gate Trigger Current vs.
Gate Current Pulse Width
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
Typical Example
I
FGT I
I
RGT I
I
RGT III
Minimum
Characteristics
Value
I Quadrant
10
0
7
10
0
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
R07DS0104EJ0300 Rev.3.00
Sep 13, 2010
Page 5 of 7
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