d. Maximum under Steady State conditions is 166 °C/W.
S15-0683-Rev. E, 06-Apr-15
Document Number: 73533
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2337DS
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
SYMBOL
V
DS
ΔV
DS
/T
J
ΔVG
S(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= -80 V, V
GS
= 0 V
V
DS
= -80 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -1.2 A
V
GS
= -6 V, I
D
= -1.1 A
V
DS
= -15 V, I
D
= -1.2 A
MIN.
-80
-
-
-2
-
-
-
-7
-
-
-
-
TYP.
-
-35.8
5.45
-
-
-
-
-
0.216
0.242
4.3
500
40
25
11
7
2.1
3.2
4.8
10
15
20
15
15
18
20
12
-
-
-0.8
30
45
25
5
MAX.
-
-
-
-4
± 100
-1
-10
-
0.270
0.303
-
-
-
-
17
11
-
-
-
15
23
30
23
23
27
30
18
-2.1
-7
-1.2
45
70
-
-
UNIT
V
mV/°C
V
nA
μA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= -40 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -40 V, V
GS
= -10 V, I
D
= -1.2 A
V
DS
= -40 V, V
GS
= -6 V, I
D
= -1.2 A
f = 1 MHz
V
DD
= -40 V, R
L
= 42
Ω
I
D
≅
-0.96 A, V
GEN
= -10 V, R
g
= 1
Ω
-
-
-
-
-
-
-
-
-
-
-
-
pF
nC
Ω
ns
V
DD
= -40 V, R
L
= 42
Ω
I
D
≅
-0.96 A, V
GEN
= -6 V, R
g
= 1
Ω
-
-
-
T
C
= 25 °C
I
S
= 0.63 A
-
-
-
-
-
-
-
A
V
ns
nC
ns
I
F
= 0.63 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0683-Rev. E, 06-Apr-15
Document Number: 73533
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2337DS
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
7
V
GS
= 10 thru 6 V
6
V
GS
= 5 V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
5
4
3
2
1
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 4 V
6
5
4
3
2
1
0
0.0
1.0
2.0
3.0
4.0
5.0
V
GS
- Gate-to-Source Voltage (V)
T
A
= - 55 °C
T
A
= 25 °C
T
A
= 125 °C
7
Vishay Siliconix
Output Characteristics
0.30
Transfer Characteristics
700
600
R
DS(on)
- On-Resistance ()
0.25
V
GS
= 6 V
C - Capacitance (pF)
500
400
300
200
100
C
oss
C
rss
0
10
20
30
C
iss
0.20
V
GS
= 10 V
0.15
0.10
0
1
2
3
4
5
6
7
I
D
- Drain Current (A)
0
40
50
60
70
80
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
R
DS(on)
- On-Resistance (Normalized)
I
D
=1.2 A
8
V
DS
= 40 V
6
V
DS
= 64 V
4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 50
V
GS
= 6 V
I
D
= 1.2 A
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 10 V
2
0
0
2
4
6
8
Q
g
- Total Gate Charge (nC)
10
12
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-0683-Rev. E, 06-Apr-15
On-Resistance vs. Junction Temperature
Document Number: 73533
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2337DS
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
R
DS(on)
- Drain-to-Source On-Resistance ()
10
I
S
- Source Current (A)
T
J
= 150 °C
0.6
I
D
= 1.2 A
0.5
T
A
= 125 °C
Vishay Siliconix
0.4
T
J
= 25 °C
1
0.3
T
A
= 25 °C
0.2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.1
3
4
5
6
7
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
- 50
I
D
= 250 µA
Power (W)
- 25
0
25
50
75
100
125
150
16
14
12
10
8
6
4
2
0
0.01
V
GS(th)
(V)
0.1
1
T
J
- Temperature (°C)
10
Time (s)
100
1000
Threshold Voltage
1000
Single Pulse Power, Junction-to-Ambient
100
I
D
- Drain Current (A)
10
Limited
by
R
DS(on)
*
I
DM
Limited
1 ms
10 ms
I
D(on)
Limited
1
0.1
100 ms
1s
10 s
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
DC
BVDSS Limited
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S15-0683-Rev. E, 06-Apr-15
Document Number: 73533
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2337DS
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.8
2.4
2.0
I
D
- Drain Current (A)
2.0
Power (W)
1.6
1.2
0.8
0.5
0.4
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
1.5
2.5
Vishay Siliconix
1.0
Current Derating*
10
Power Derating
I
C
- Peak A
v
alanche Current (A)
T
A
1
1.0E-6
L
I
A
BV - V
DD
10.0E-6
100.0E-6
1.0E-3
10.0E-3
T
A
- Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0683-Rev. E, 06-Apr-15
Document Number: 73533
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
