Precision Micropower, Low Dropout
Voltage References
REF19x Series
FEATURES
Initial Accuracy: 2 mV Max
Temperature Coefficient: 5 ppm/ C Max
Low Supply Current: 45 A Max
Sleep Mode: 15 A Max
Low Dropout Voltage
Load Regulation: 4 ppm/mA
Line Regulation: 4 ppm/V
High Output Current: 30 mA
Short Circuit Protection
APPLICATIONS
Portable Instrumentation
A-to-D and D-to-A Converters
Smart Sensors
Solar Powered Applications
Loop Current Powered Instrumentations
GENERAL DESCRIPTION
PIN CONFIGURATIONS
8-Lead Narrow-Body SOIC and TSSOP
(S Suffix and RU Suffix)
TP
V
S
SLEEP
GND
1
2
3
4
8 NC
REF19x
SERIES
TOP VIEW
(Not to Scale)
7 NC
6 OUTPUT
5 TP
NC = NO CONNECT
TP PINS ARE FACTORY TEST POINTS,
NO USER CONNECTION
8-Lead Epoxy DIP (P Suffix)
TP
V
S
1
2
3
4
8 NC
REF19x
SERIES
TOP VIEW
(Not to Scale)
7
6
5
NC
OUTPUT
TP
REF19x series precision band gap voltage references use a pat-
ented temperature drift curvature correction circuit and laser
trimming of highly stable thin film resistors to achieve a very low
temperature coefficient and a high initial accuracy.
The REF19x series is made up of micropower, Low Dropout
Voltage (LDV) devices providing a stable output voltage from
supplies as low as 100 mV above the output voltage and consum-
ing less than 45
µA
of supply current. In sleep mode, which is
enabled by applying a low TTL or CMOS level to the sleep pin,
the output is turned off and supply current is further reduced to
less than 15
µA.
The REF19x series references are specified over the extended
industrial temperature range (–40°C to +85°C) with typical
performance specifications over –40°C to +125°C for applications
such as automotive.
All electrical grades are available in 8-lead SOIC; the PDIP and
TSSOP are only available in the lowest electrical grade. Products
are also available in die form.
Test Pins (TP)
SLEEP
GND
NC = NO CONNECT
TP PINS ARE FACTORY TEST POINTS,
NO USER CONNECTION
Table I.
Part
Number
REF191
REF192
REF193
REF194
REF195
REF196
REF198
Nominal Output
Voltage (V)
2.048
2.50
3.00
4.50
5.00
3.30
4.096
ORDERING GUIDE
Model
REF19xGP
REF19xES
3
REF19xFS
3
REF19xGS
REF19xGRU
4
REF19xGBC
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
25°C
Package
Description
8-Lead Plastic DIP
2
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead TSSOP
DICE
Package
Option
1
N-8
SOIC-8
SOIC-8
SOIC-8
RU-8
The test pins, Pin 1 and Pin 5, are reserved for in-package
Zener-zap. To achieve the highest level of accuracy at the output,
the Zener-zapping technique is used to trim the output voltage.
Since each unit may require a different amount of adjustment, the
resistance value at the test pins will vary widely from pin to pin as
well as from part to part. The user should not make any physical
nor electrical connections to Pin 1 and Pin 5.
REV. E
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective companies.
NOTES
1
N = Plastic DIP, SOIC = Small Outline, RU = Thin Shrink Small Outline.
2
8-lead plastic DIP is only available in “G” grade.
3
REF193 and REF196 are only available in “G” grade.
4
Available for REF192, REF195, and REF198 only.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© 2003 Analog Devices, Inc. All rights reserved.
REF19x Series
REF191–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, T = 25 C, unless otherwise noted.)
S
A
Parameter
INITIAL ACCURACY
1
E Grade
F Grade
G Grade
LINE REGULATION
2
E Grade
F and G Grades
LOAD REGULATION
2
E Grade
F and G Grades
DROPOUT VOLTAGE
Symbol
V
O
Condition
I
OUT
= 0 mA
Min
2.046
2.043
2.038
Typ
2.048
Max
2.050
2.053
2.058
4
8
10
15
0.95
1.25
1.55
Unit
V
V
V
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
V
mV
µV
p-p
V
O
/ V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
2
4
4
6
V
O
/ V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0 mA
≤
I
OUT
≤
30 mA
V
S
= 3.15 V, I
LOAD
= 2 mA
V
S
= 3.3 V, I
LOAD
= 10 mA
V
S
= 3.6 V, I
LOAD
= 30 mA
1000 Hours @ 125°C
0.1 Hz to 10 Hz
LONG-TERM STABILITY
3
NOISE VOLTAGE
DV
O
e
N
1.2
20
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at 125
°C,
with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, –40 C
≤
T
≤
+85 C, unless otherwise noted.)
S
A
Parameter
Symbol
Condition
I
OUT
= 0 mA
Min
Typ
2
5
10
5
10
5
10
Max
5
10
25
10
20
15
20
0.95
1.25
1.55
Unit
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
V
V
µA
V
µA
µA
µA
TEMPERATURE COEFFICIENT
1, 2
E” Grade
TCV
O
/°C
F Grade
G Grade
3
LINE REGULATION
4
E Grade
F and G Grades
LOAD REGULATION
4
E Grade
F and G Grades
DROPOUT VOLTAGE
V
O
/ V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
V
O
/ V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0 mA
≤
I
OUT
≤
25 C
V
S
= 3.15 V, I
LOAD
= 2 mA
V
S
= 3.3 V, I
LOAD
= 10 mA
V
S
= 3.6 V, I
LOAD
= 25 mA
2.4
SLEEP
PIN
Logic High Input Voltage
Logic High Input Current
Logic Low Input Voltage
Logic Low Input Current
SUPPLY CURRENT
Sleep Mode
V
H
I
H
V
L
I
L
No Load
No Load
–8
0.8
–8
45
15
NOTES
1
For proper operation, a 1
µF
capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°C.
TCV
O
= (V
MAX
– V
MIN
)/ V
O
(T
MAX
– T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
–2–
REV. E
REF19x Series
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, T = 25 C, unless otherwise noted.)
S
A
Parameter
INITIAL ACCURACY
1
E Grade
F Grade
G Grade
LINE REGULATION
2
E Grade
F and G Grades
LOAD REGULATION
2
E Grade
F and G Grades
DROPOUT VOLTAGE
LONG-TERM STABILITY
3
NOISE VOLTAGE
Symbol
V
O
Condition
I
OUT
= 0 mA
Min
2.498
2.495
2.490
Typ
2.500
Max
2.502
2.505
2.510
4
8
10
15
1.00
1.40
Unit
V
V
V
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
mV
µV
p-p
V
O
/ V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
2
4
4
6
V
O
/ V
LOAD
V
S
– V
O
DV
O
e
N
V
S
= 5.0 V, 0 mA
≤
I
OUT
≤
30 mA
V
S
= 3.5 V, I
LOAD
= 10 mA
V
S
= 3.9 V, I
LOAD
= 30 mA
1000 Hours @ 125°C
0.1 Hz to 10 Hz
1.2
25
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at 125
°C,
with an LTPD of 1.3.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, T = –40 C
≤
T
≤
+85 C, unless otherwise noted.)
S
A
A
Parameter
Symbol
Condition
I
OUT
= 0 mA
Min
Typ
2
5
10
5
10
5
10
Max
5
10
25
10
20
15
20
1.00
1.50
Unit
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
V
V
V
µA
V
µA
µA
µA
TEMPERATURE COEFFICIENT
1, 2
E Grade
TCV
O
/°C
F Grade
G Grade
3
LINE REGULATION
4
E Grade
F and G Grades
LOAD REGULATION
4
E Grade
F and G Grades
DROPOUT VOLTAGE
SLEEP
PIN
Logic High Input Voltage
Logic High Input Current
Logic Low Input Voltage
Logic Low Input Current
SUPPLY CURRENT
Sleep Mode
V
O
/ V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
V
O
/ V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0 mA
≤
I
OUT
≤
25 mA
V
S
= 3.5 V, I
LOAD
= 10 mA
V
S
= 4.0 V, I
LOAD
= 25 mA
2.4
V
H
I
H
V
L
I
L
No Load
No Load
–8
0.8
–8
45
15
NOTES
1
For proper operation, a 1
µF
capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°C.
TCV
O
= (V
MAX
– V
MIN
)/ V
O
(T
MAX
– T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
–4–
REV. E
REF19x Series
REF192–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = 3.3 V, –40 C
≤
T
≤
+125 C, unless otherwise noted.)
S
A
Parameter
Symbol
Condition
I
OUT
= 0 mA
Min
Typ
2
5
10
10
20
10
20
Max
Unit
ppm/°C
ppm/°C
ppm/°C
ppm/V
ppm/V
ppm/mA
ppm/mA
TEMPERATURE COEFFICIENT
1, 2
E Grade
TCV
O
/°C
F Grade
G Grade
3
LINE REGULATION
4
E Grade
F and G Grades
LOAD REGULATION
4
E Grade
F and G Grades
DROPOUT VOLTAGE
V
O
/ V
IN
3.0 V
≤
V
S
≤
15 V, I
OUT
= 0 mA
V
O
/ V
LOAD
V
S
– V
O
V
S
= 5.0 V, 0 mA
≤
I
OUT
≤
20 mA
V
S
= 3.5 V, I
LOAD
= 10 mA
V
S
= 4.0 V, I
LOAD
= 20 mA
1.00
1.50
V
V
NOTES
1
For proper operation, a 1
µF
capacitor is required between the output pin and the GND pin of the device.
2
TCV
O
is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/
°C.
TCV
O
= (V
MAX
– V
MIN
)/ V
O
(T
MAX
– T
MIN
).
3
Guaranteed by characterization.
4
Line and load regulation specifications include the effect of self-heating.
Specifications subject to change without notice.
REF193–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
INITIAL ACCURACY
1
G Grade
LINE REGULATION
2
G Grades
LOAD REGULATION
2
G Grade
DROPOUT VOLTAGE
LONG-TERM STABILITY
3
NOISE VOLTAGE
Symbol
V
O
V
O
/ V
IN
V
O
/ V
LOAD
V
S
– V
O
DV
O
e
N
(@ V
S
= 3.3 V, T
A
= 25 C, unless otherwise noted.)
Condition
I
OUT
= 0 mA
3.3 V,
≤
V
S
≤
15 V, I
OUT
= 0 mA
V
S
= 5.0 V, 0 mA
≤
I
OUT
≤
30 mA
V
S
= 3.8 V, I
LOAD
= 10 mA
V
S
= 4.0 V, I
LOAD
= 30 mA
1000 Hours @ 125°C
0.1 Hz to 10 Hz
1.2
30
Min
2.990
Typ
3.0
4
6
Max
3.010
8
15
0.80
1.00
Unit
V
ppm/V
ppm/mA
V
V
mV
µV
p-p
NOTES
1
Initial accuracy includes temperature hysteresis effect.
2
Line and load regulation specifications include the effect of self-heating.
3
Long-term drift is guaranteed by 1000 hours life test performed on three independent wafer lots at 125
°C,
with an LTPD of 1.3.
Specifications subject to change without notice.
REV. E
–5–
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