ARF521(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
165V, 150W, 150MHz
N-CHANNEL ENHANCEMENT MODE
The ARF521 is an RF power transistor designed for high voltage operation in
broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz.
RF POWER MOSFET
• Specified 125 Volt, 81MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Efficiency = 50%
• High Voltage Breakdown and Large SOA
for Superior Ruggedness.
• Industry Standard Package
• Low Vth Thermal Coefficient
Maximum Ratings
Symbol
V
DSS
I
D
V
GS
P
D
T
J
, T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063” from Case for 10 Sec.
All Ratings: T
C
=25°C unless otherwise specified
ARF521
500
10
±30
250
-55 to 175
300
Unit
V
A
V
W
°C
Static Electrical Characteristics
Symbol
V
(BR)DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
GS(TH)
Parameter
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μA)
Drain-Source On-State Resistance
1
(I
D(ON)
= 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0, T
C
= 125°C)
Gate-Source Leakage Current (V
DS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 15V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 200mA)
3
2
3.6
4
Min
500
0.56
0.8
25
250
±100
Typ
Max
Unit
V
Ω
μA
nA
mhos
Volts
Thermal Characteristics
Symbol
R
θ
JC
R
θ
CS
Characteristic
Junction to Case Thermal Resistance
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
0.1
Min
Typ
Max
0.60
Unit
°C/W
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-4930 Rev B 8-2007
Dynamic Characteristics
Symbol
C
ISS
C
oss
C
rss
t
d(ON)
t
r
t
d(off)
t
f
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 50V
f = 1MHz
V
GS
= 15V
V
DD
= 0.5V
DSS
I
D
=I
D[Cont.]
@ 25°C
R
G
= 1.6W
Min
Typ
780
125
7
5.1
4.1
12
4.0
ARF521(G)
Max
900
150
10
10
8
18
7
ns
pF
Unit
Functional Characteristics
Symbol
G
PS
h
y
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 5:1
Test Conditions
f = 81MHz
I
dq
= 50mA V
DD
= 125V
P
OUT
= 150W
Min
14
50
Typ
15
55
Max
Unit
dB
%
No Degradation in Output Power
1. Pulse Test: Pulse width < 380
μS,
Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
25
Class AB
V
DD
= 125V
P
out
= 150W
20
GAIN (dB)
CAPACITANCE (pf)
3000
1000
500
C
iss
C
oss
100
50
C
rss
10
15
10
0
25
50
75
100
125
150
1
.1
1
10
100 200
FREQUENCY (MHz)
Figure 1, Typical Gain vs. Frequency
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
30
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
25
20
T
J
= +25°C
15
10
5
T
J
= +125°C
050-4930 Rev B 8-2007
V
DS
> I
D
(ON) x R
DS
(ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
OPERATION HERE
LIMITED BY R
(ON)
DS
T
J
= -55°C
10
5
100us
1ms
1
.5
T
C
=+25°C
T
J
=+175°C
SINGLE PULSE
1
5
10
50 100
500
10ms
100ms
DC
T
J
= -55°C
0
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
.1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
ARF521(G)
1.10
I
D
, DRAIN CURRENT (AMPERES)
30
25
20
15
10
5
0
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
8V
7V
12V
11V
10V
9V
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
1.05
1.00
0.95
0.90
T
C
, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0.70
0.60
D = 0.9
0.50
0.7
0.40
0.30
0.20
0.10
0
0.5
0.3
0.1
0.05
10
-5
10
-4
SINGLE PULSE
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Transient Thermal Impedance RC Model
T
J
( C)
0.256
Dissipated Power
(Watts)
0.00496F
0.0590F
0.635F
0.213
T
C
( C)
0.131
Z
EXT
are the external thermal
impedances: Case to sink, sink to
ambient, etc. Set to zero when modeling
only the case to junction.
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27
40
65
80
100
Z
in
(Ω)
24 - j 4.5
8.3 - j 11.6
2.5 - j 7.1
1.0 - j 4.2
.30 - j 1.1
.25 + j 0.3
.35 + j 1.6
28.7 - j 28
17.9 - j 26
9.0 - j 20.6
5.8 - j 17
050-4930 Rev B 8-2007
Z
IN
- Gate shunted with 25Ω
I
dq
= 50mA
Z
OL
- Conjugate of optimum load for 150 Watts output at V
dd
=125V
Z
EXT
Z
OL
(Ω)
55 - j 4
45 - j 22
4 - j 14.2
ARF521 Test Circuit 81.36 MHz
L4
C12
R1
Bias
0 - 12V
C8
C2
L1
TL1
DUT
C1
C3
C4
C5
R2
R3
L2
C6
C7
L3
C9
+125V
C10
C11
RF
Output
ARF521(G)
RF
Input
C13
C1 - Arco 406 Mica trimmer
C2 - 220pF Semco metal clad
C3 - Arco 464 Mica trimmer
C4 - 820pF ATC 700B
C5- 1000pF ATC 700B
C6 - Arco 463 Mica trimmer
C7-C10 10nF 500V chip
C11-C13 1nF NPO 500V
TL1 - .23" x 1.5" stripline
L1 -- 2t #18 .3" ID .2"L ~50nH
L2 -- 3t #16 AWG .31" ID .3"L ~65nH
L3 -- 10t #22 AWG .25 ID ~470nH
L4 -- VK200-4B ferrite choke ~3uH
R1-R3 -- 1k Ohm 1/4W Carbon
DUT = ARF521
Vdd Power
Gate Bias
ARF521 Test Fixture
2-22-02 rf
A
U
M
1
M174 Package Outline
.5” SOE
DIM
INCHES
MIN
0.096
0.465
0.229
0.216
0.084
0.144
0.003
0.435
45° NOM
0.115
0.246
0.720
0.130
0.255
0.730
MAX
0.990
0.510
0.275
0.235
0.110
0.178
0.007
MILLIMETERS
MIN
24.39
11.82
5.82
5.49
2.14
3.66
0.08
11.0
45° NOM
2.93
6.25
18.29
3.30
6.47
18.54
MAX
25.14
12.95
6.98
5.96
2.79
4.52
0.17
Q
M
4
A
B
R
PIN 1 - SOURCE
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - DRAIN
B
C
D
E
2
3
H
D
K
J
K
M
J
050-4930 Rev B 8-2007
Q
H
E
C
Seating Plane
R
U
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