DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
BC846F; BC847F; BC848F series
NPN general purpose transistors
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 18
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
FEATURES
•
Power dissipation comparable to SOT23
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification, especially
in portable equipment.
DESCRIPTION
BC846F; BC847F; BC848F series
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
MAM410
NPN transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
PNP complements: BC856F, BC857F and BC858F series.
1
2
MARKING
TYPE
NUMBER
BC846AF
BC846BF
BC847AF
BC847BF
MARKING
CODE
1A
1B
1E
1F
TYPE
NUMBER
BC847CF
BC848AF
BC848BF
BC848CF
MARKING
CODE
1G
1J
1K
1L
Fig.1
Top view
Simplified outline (SC-89; SOT490) and
symbol.
1999 May 18
2
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BC846AF; BC846BF
BC847AF; BC847BF; BC847CF
BC848AF; BC848BF; BC848CF
V
CEO
collector-emitter voltage
BC846AF; BC846BF
BC847AF; BC847BF; BC847CF
BC848AF; BC848BF; BC848CF
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
65
45
30
5
100
200
100
250
+150
150
+150
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
−
80
50
30
V
V
V
MIN.
MAX.
UNIT
1999 May 18
3
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC846AF; BC847AF; BC848AF
BC846BF; BC847BF; BC848BF
BC847CF; BC848CF
V
CEsat
V
BE
C
c
f
T
F
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
PARAMETER
thermal resistance from junction to ambient
BC846F; BC847F; BC848F series
CONDITIONS
in free air; note 1
VALUE
500
UNIT
K/W
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 5 V
−
−
−
MIN.
MAX.
15
5
100
220
450
800
200
400
700
770
1.5
−
10
UNIT
nA
µA
nA
110
200
420
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
580
−
−
100
−
mV
mV
mV
mV
pF
MHz
dB
1999 May 18
4
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BC846F; BC847F; BC848F series
SOT490
D
B
E
A
X
HE
v
M
A
3
A
1
e1
e
bp
2
w
M
B
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.8
0.6
b
p
0.33
0.23
c
0.2
0.1
D
1.7
1.5
E
0.95
0.75
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.5
0.3
v
0.1
w
0.1
OUTLINE
VERSION
SOT490
REFERENCES
IEC
JEDEC
EIAJ
SC-89
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
1999 May 18
5
stm32/stm8
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