8Mb
SMART 5 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
FEATURES
• Eleven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
• Eight main memory blocks
• Smart 5 technology (B5):
5V ±10% V
CC
5V ±10% V
PP
application/
production programming
1
• Advanced 0.18µm CMOS floating-gate process
• Compatible with 0.3µm Smart 5 device
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP and SOP packaging options
• Byte- or word-wide READ and WRITE
(MT28F800B5, 1 Meg x 8/512K x 16)
MT28F008B5
MT28F800B5
5V Only, Dual Supply (Smart 5)
0.18µm Process Technology
40-Pin TSOP Type I
48-Pin TSOP Type I
44-Pin SOP
2
GENERAL DESCRIPTION
The MT28F008B5 (x8) and MT28F800B5 (x16/x8)
are nonvolatile, electrically block-erasable (Flash),
programmable read-only memories containing
8,388,608 bits organized as 524,288 words (16 bits) or
1,048,576 bytes (8 bits). Writing or erasing the device is
done with a 5V V
PP
voltage, while all operations are
performed with a 5V V
CC
. Due to process technology
advances, 5V V
PP
is optimal for application and pro-
duction programming. These devices are fabricated
with Micron’s advanced 0.18µm CMOS floating-gate
process.
The MT28F008B5 and MT28F800B5 are organized
into eleven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure
or overwrite, the devices feature a hardware-protected
boot block. This block may be used to store code
implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
Please refer to Micron’s Web site (www.micron.com/
flash)
for the latest data sheet.
OPTIONS
• Timing
80ns
• Configurations
1 Meg x 8
512K x 16/1 Meg x 8
• Boot Block Starting Word Address
Top
Bottom
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
• Packages
MT28F008B5
Plastic 40-pin TSOP Type I
(10mm x 29mm)
MT28F800B5
Plastic 48-pin TSOP Type I
(12mm x 20mm)
Plastic 44-pin SOP (600 mil)
Notes:
MARKING
-8
MT28F008B5
MT28F800B5
T
B
None
ET
VG
WG
SG
2
1.
This generation of devices does not support 12V V
PP
compatibility production programming; however, 5V
V
PP
application production programming can be used
with no loss of performance.
2.
Contact factory for availability.
Part Number Example:
MT28F800B5WG-8 BET
8Mb Smart 5 Boot Block Flash Memory
MT28F800B5_3.fm - Rev. 3, Pub. 8/2002
1
Micron Technology, Inc. Reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE
.
8Mb
SMART 5 BOOT BLOCK FLASH MEMORY
Pin Assignment (Top View)
48-Pin TSOP Type I
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
V
PP
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
V
SS
DQ15/(A - 1)
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
V
PP
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44-PIN SOP
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RP#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V
SS
DQ15/(A - 1)
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
Order Number and Part Marking
MT28F800B5WG-8 B
MT28F800B5WG-8 T
MT28F800B5WG-8 BET
MT28F800B5WG-8 TET
Order Number and Part Marking
MT28F800B5SG-8 B
MT28F800B5SG-8 T
MT28F800B5SG-8 BET
MT28F800B5SG-8 TET
40-Pin TSOP Type I
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
V
PP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A17
V
SS
NC
A19
A10
DQ7
DQ6
DQ5
DQ4
V
CC
V
CC
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
Order Number and Part Marking
MT28F008B5VG-8 B
MT28F008B5VG-8 T
MT28F008B5VG-8 BET
MT28F008B5VG-8 TET
Notes: 1.
Contact factory for availability.
8Mb Smart 5 Boot Block Flash Memory
MT28F800B5_3.fm - Rev. 3, Pub. 8/2002
2
Micron Technology, Inc. Reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
Functional Block Diagram
8
Input
Buffer
BYTE#
2
I/O
Control
7
16KB Boot Block
Addr.
Buffer/
Latch
9
(10)
8Mb Smart 5 Boot Block Flash Memory
MT28F800B5_3.fm - Rev. 3, Pub. 8/2002
Logic
Input
Buffer
A0-A18/(A19)
19 (20)
10
96KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
Command
Execution
Logic
Y - Select Gates
8
Sense Amplifiers
Write/Erase-Bit
Compare and Verify
Y-
Decoder
Machine
State
7
16
Input Data
Latch/Mux
A-1
Input
Buffer
8KB Parameter Block
8KB Parameter Block
A9
Addr.
Counter
Power
(Current)
Control
X - Decoder/Block Erase Control
DQ15/(A - 1)
2
DQ8-DQ14
2
WP#
1
CE#
OE#
WE#
DQ0-DQ7
RP#
V
CC
V
PP
Switch/
Pump
DQ15
V
PP
8Mb
SMART 5 BOOT BLOCK FLASH MEMORY
3
Status
Register
Identification
Register
7
8
8
Output
Buffer
Output
Buffer
Output
Buffer
MUX
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
Notes: 1.
Does not apply to MT28F800B5SG.
2.
Does not apply to MT28F008B5.
8Mb
SMART 5 BOOT BLOCK FLASH MEMORY
PIN DESCRIPTIONS
44-PIN SOP
NUMBERS
43
40-PIN
TSOP
NUMBERS
9
48-PIN
TSOP
NUMBERS
11
SYMBOL
WE#
TYPE
Input
DESCRIPTION
Write Enable: Determines if a given cycle is a WRITE cycle.
If WE# is LOW, the cycle is either a WRITE to the command
execution logic (CEL) or to the memory array.
Write Protect: Unlocks the boot block when HIGH if V
PP
=
V
PPH
(5V) and RP# = V
IH
during a WRITE or ERASE. Does
not affect WRITE or ERASE operation on other blocks.
Chip Enable: Activates the device when LOW. When CE# is
HIGH, the device is disabled and goes into standby power
mode.
Reset/Power-Down: When LOW, RP# clears the status
register, sets the internal state machine (ISM) to the array
read mode and places the device in deep power-down
mode. All inputs, including CE#, are “Don’t Care,” and all
outputs are High-Z. RP# unlocks the boot block and
overrides the condition of WP# when at V
HH
; RP# must be
held at V
IH
during all other modes of operation.
Output Enable: Enables data output buffers when LOW.
When OE# is HIGH, the output buffers are disabled.
Byte Enable: If BYTE# = HIGH, the upper byte is active
through DQ8–DQ15. If BYTE# = LOW, DQ8–DQ14 are High-
Z, and all data is accessed through DQ0–DQ7. DQ15/(A - 1)
becomes the least significant address input.
Address Inputs: Select a unique 16-bit word or 8-bit byte.
The DQ15/(A - 1) input becomes the lowest order address
when BYTE# = LOW (MT28F800B5) to allow for a selection
of an 8-bit byte from the 1,048,576 available.
–
12
14
WP#
Input
12
22
26
CE#
Input
44
10
12
RP#
Input
14
33
24
–
28
47
OE#
BYTE#
Input
Input
11, 10, 9, 8,
7, 6, 5, 4,
42, 41, 40,
39, 38, 37,
36, 35, 34,
3, 2
31
21, 20, 19,
18, 17, 16,
15, 14, 8, 7,
36, 6, 5, 4,
3, 2, 1, 40,
13, 37
–
25, 24,
23,22, 21,
20, 19, 18,
8, 7, 6, 5, 4,
3, 2, 1, 48,
17, 16
45
A0–A18/
(A19)
Input
DQ15/
(A-1)
DQ0–DQ7
15, 17, 19,
21, 24, 26,
28, 30
16, 18, 20,
22, 25, 27,
29
1
25-28, 32-35
–
11
29, 31, 33,
35, 38, 40,
42, 44
30, 32, 34,
36, 39, 41,
43
13
DQ8–
DQ14
V
PP
23
13, 32
–
30, 31
23, 39
29, 38
37
27, 46
9, 10, 15
V
CC
V
SS
NC
Input/ Data I/O: MSB of data when BYTE# = HIGH.
Output Address Input: LSB of address input when BYTE# = LOW
during READ or WRITE operation.
Input/ Data I/Os: Data output pins during any READ operation or
Output data input pins during a WRITE. These pins are used to
input commands to the CEL.
Input/ Data I/Os: Data output pins during any READ operation or
Output data input pins during a WRITE when BYTE# = HIGH. These
pins are High-Z when BYTE# is LOW.
Supply Write/Erase Supply Voltage: From a WRITE or ERASE
CONFIRM until completion of the WRITE or ERASE, VPP
must be at 5V. VPP = “Don’t Care” during all other
operations.
Supply Power Supply: +5V ±10%.
Supply Ground.
–
No Connect: These pins may be driven or left unconnected.
8Mb Smart 5 Boot Block Flash Memory
MT28F800B5_3.fm - Rev. 3, Pub. 8/2002
4
Micron Technology, Inc. Reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
8Mb
SMART 5 BOOT BLOCK FLASH MEMORY
TRUTH TABLE (MT28F800B5)
1
FUNCTION
Standby
RESET
READ
READ (word mode)
READ (byte mode)
Output Disable
ERASE SETUP
ERASE CONFIRM
3
WRITE SETUP
WRITE (word mode)
4
WRITE (byte mode)
4
READ ARRAY
5
ERASE SETUP
ERASE CONFIRM
3
ERASE CONFIRM
3, 6
WRITE SETUP
WRITE (word mode)
4
WRITE (word mode)
4, 6
WRITE (byte mode)
4
WRITE (byte mode)
4, 6
READ ARRAY
5
DEVICE IDENTIFICATION
Manufacturer
Compatibility (word
mode)
8
Manufacturer
Compatibility (byte
mode)
Device (word mode, top
boot)
8
Device (byte mode, top
boot)
Device (word mode,
bottom boot)
8
Device (byte mode,
bottom boot)
Notes: 1.
2.
3.
4.
5.
6.
7.
8.
H
H
H
H
H
H
H
H
H
H
V
HH
H
H
V
HH
H
V
HH
H
H
7
RP#
H
L
CE#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
OE# WE# WP# BYTE#
X
X
L
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
X
X
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
H
X
H
X
X
X
X
H
L
X
X
X
X
H
L
X
X
X
X
X
H
H
L
L
X
H
A0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
A9
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
V
ID
V
PP
X
X
X
X
X
X
V
PPH
X
V
PPH
V
PPH
X
X
V
PPH
V
PPH
X
V
PPH
V
PPH
V
PPH
V
PPH
X
X
DQ0–
DQ7
High-Z
High-Z
Data-Out
Data-Out
High-Z
20h
D0h
10h/40h
Data-In
Data-In
FFh
20h
D0h
D0h
10h/40h
Data-In
Data-In
Data-In
Data-In
FFh
89h
DQ8–
DQ14
High-Z
High-Z
Data-Out
High-Z
High-Z
X
X
X
Data-In
X
X
X
X
X
X
Data-In
Data-In
X
X
X
00h
DQ15/
A-1
High-Z
High-Z
Data-Out
A-1
High-Z
X
X
X
Data-In
A-1
X
X
X
X
X
Data-In
Data-In
A-1
A-1
X
–
WRITE/ERASE (EXCEPT BOOT BLOCK)
2
WRITE/ERASE (BOOT BLOCK)
2
H
H
L
L
H
X
L
L
V
ID
X
89h
High-Z
X
H
H
H
H
L
L
L
L
L
L
L
L
H
H
H
H
X
X
X
X
H
L
H
L
H
H
H
H
V
ID
V
ID
V
ID
V
ID
X
X
X
X
9Ch
9Ch
9Dh
9Dh
88h
High-Z
88h
High-Z
–
X
–
X
L = V
IL
(LOW), H = V
IH
(HIGH), X = V
IL
or V
IH
(“Don’t Care”).
V
PPH
= 5V.
Operation must be preceded by ERASE SETUP command.
Operation must be preceded by WRITE SETUP command.
The READ ARRAY command must be issued before reading the array after writing or erasing.
When WP# = V
IH
, RP# may be at V
IH
or V
HH
.
A1–A8, A10–A17 = V
IL
.
Value reflects DQ8–DQ15.
8Mb Smart 5 Boot Block Flash Memory
MT28F800B5_3.fm - Rev. 3, Pub. 8/2002
5
Micron Technology, Inc. Reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.
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