2SK4012
TOSHIBA Field Effect Transistor
Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching Regulator Applications
Low drain−source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.33
Ω
(typ.)
Unit: mm
: |Y
fs
| = 8.5 S (typ.)
: I
DSS
= 100
μA
(max) (V
DS
= 500 V)
: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
±30
13
52
45
1170
13
4.5
150
−55
to 150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1: Gate
2: Drain
3: Source
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10U1B
Weight: 1.7 (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
2.78
62.5
Unit
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 11.8 mH, R
G
= 25
Ω,
I
AR
= 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1
2009-09-29
2SK4012
Electrical Characteristics
(Ta = 25°C)
Characteristic
Gate leakage current
Gate−source breakdown voltage
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 13 A
Duty
≤
1%, t
w
=
10
μs
10 V
V
GS
0V
15
Ω
I
D
=
6.5 A
V
OUT
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±25 V, V
DS
= 0 V
I
G
= ±10
μA,
V
DS
= 0 V
V
DS
= 500 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 6.5 A
V
DS
= 10 V, I
D
= 6.5 A
Min
—
±30
—
500
2.0
—
4.0
—
—
—
—
Typ.
—
—
—
—
—
0.33
8.5
2400
18
220
25
Max
±10
—
100
—
4.0
0.4
—
—
—
—
—
pF
Unit
μA
V
μA
V
V
Ω
S
Turn−on time
Switching time
Fall time
R
L
=
31
Ω
V
DD
∼
200 V
−
—
70
—
ns
—
10
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
—
—
—
—
95
50
30
20
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
—
—
I
DR
= 13 A, V
GS
= 0 V
I
DR
= 13 A, V
GS
= 0 V
dI
DR
/ dt = 100 A /
μs
Min
—
—
—
—
—
Typ.
—
—
—
1000
11
Max
13
52
−1.7
—
—
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K4012
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
2SK4012
I
D
– V
DS
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
8
6
20
8,10
I
D
– V
DS
COMMON SOURCE
Tc
=
25°C
PULSE TEST
DRAIN CURRENT I
D
(A)
6
5.25
4
5
2
4.75
4.5
VGS
=
4 V
0
0
1
2
3
4
5
DRAIN CURRENT I
D
(A)
8
16
12
6
5.75
8
5.5
5.25
4
5
4.75
4.5
0
0
10
20
30
VGS
=
4 V
40
50
DRAIN−SOURCE VOLTAGE V
DS
(V)
DRAIN−SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
50
V
DS
– V
GS
10
DRAIN CURRENT I
D
(A)
40
DRAIN−SOURCE VOLTAGE V
DS
(V)
COMMON SOURCE
VDS
=
20 V
PULSE TEST
Tc
= −55°C
COMMON SOURCE
Tc
=
25°C
PULSE TEST
8
25
30
100
20
6
4
13
10
2
6
ID
=
3 A
0
0
2
4
6
8
10
0
0
4
8
12
16
20
GATE−SOURCE VOLTAGE V
GS
(V)
GATE−SOURCE VOLTAGE V
GS
(V)
⎪Y
fs
⎪ −
I
D
100
R
DS (ON)
−
I
D
1
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪
(S)
Tc
= −55°C
25
10
100
DRAIN−SOURCE ON-RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
VDS
=
20 V
PULSE TEST
COMMON SOURCE
Tc
=
25°C
PULSE TEST
VGS
=
10 V
15
1
1
10
100
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
3
2009-09-29
2SK4012
R
DS (ON)
– Tc
COMMON SOURCE
VGS
=
10 V
PULSE TEST
I
DR
−
V
DS
100
0.8
DRAIN REVERSE CURRENT I
DR
(A)
1.0
DRAIN−SOURCE ON-RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
0.6
ID
=
13A
0.4
3
0.2
6
1
10
5
3
1
VGS
=
0,
−1
V
−0.6
−0.8
−1.0
−1.2
0
−80
−40
0
40
80
120
160
0.1
0
−0.2
−0.4
CASE TEMPERATURE
Tc (°C)
DRAIN−SOURCE VOLTAGE V
DS
(V)
C – V
DS
10000
5
Ciss
V
th
−
Tc
V
th
(V)
GATE THRESHOLD VOLTAGE
(pF)
4
1000
CAPACITANCE C
3
Coss
2
100
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
10
0.1
1
10
1
Crss
100
0
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
PULSE TEST
DRAIN−SOURCE VOLTAGE V
DS
(V)
CASE TEMPERATURE
Tc (°C)
P
D
−
Tc
50
500
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
DRAIN−SOURCE VOLTAGE V
DS
(V)
COMMON SOURCE
ID
=
13 A
Tc
=
25°C
PULSE TEST
VDS
20
DRAIN POWER DISSIPATION
P
D
(W)
40
400
400
16
20
200
200
200
8
10
100
VGS
VDS
=
100 V
4
0
0
40
80
120
160
200
0
0
20
40
60
80
0
100
CASE TEMPERATURE
Tc (°C)
TOTAL GATE CHARGE Q
g
(nC)
4
2009-09-29
Gate−source voltage
30
300
VDS
=
100 V
400
12
V
GS
(V)
2SK4012
NORMALIZED TRANSIENT THERMAL IMPEDANCE
r
th (t)
/R
th (ch-c)
r
th
– t
w
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
SINGLE PULSE
0.01
T
Duty
=
t/T
Rth (ch-c)
=
2.78°C/W
0.01
0.001
10μ
100μ
1½
10½
100½
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
ID max (PULSE)
*
1200
E
AS
– T
ch
AVALANCHE ENERGY E
AS
(mJ)
100
μs
*
ID max (CONTINUOUS)
*
10
1 ms
*
1000
800
DRAIN CURRENT I
D
(A)
600
1
DC OPERATION
Tc
=
25°C
400
200
0.1
*:
SINGLE NONREPETITIVE PULSE
Tc
=
25°C
Curves must be derated linearly
with increase in temperature
0.01
1
10
VDSS max
100
1000
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
DRAIN−SOURCE VOLTAGE V
DS
(V)
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
11.8 mH
WAVEFORM
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
5
2009-09-29
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