Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Suitable for short and medium
pulse applications up to
100
µs/10%
•
Internal input and output
prematching networks allow an
easier design of circuits
•
Diffused emitter ballasting resistors
improve ruggedness
•
Interdigitated emitter-base
structure provides high emitter
efficiency
•
Gold metallization with barrier
realizes very good stability of the
characteristics and excellent
lifetime
•
Multicell geometry improves power
sharing and reduces thermal
resistance.
APPLICATIONS
handbook, 4 columns
MX1011B700Y
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common base class C
broadband amplifier.
MODE OF
OPERATION
Class C
CONDITIONS
t
p
= 10
µs;
δ
= 1%
f
(GHz)
1.09
V
CC
(V)
50
P
L
(W)
650
G
P
(dB)
≥6
η
C
(%)
≥48
PINNING - SOT439A
PIN
1
2
3
collector
emitter
base connected to flange
DESCRIPTION
1
Intended for use in common base,
class C, broadband, pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the 1030 to 1090 MHz
band. Also suitable for medium pulse,
heavy duty operation within the
1030 to 1150 MHz band.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to
flange.
c
b
3
2
Top view
3
e
MAM045
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CES
V
EBO
I
CM
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
t
≤
10 s; note 1
CONDITIONS
open emitter
open base
R
BE
= 0
Ω
open collector
t
p
≤
10
µs; δ ≤
1%
T
mb
<
75
°C;
t
p
≤
10
µs; δ ≤
1%
−
−
−
−
−
−
MX1011B700Y
MIN.
MAX.
65
15
65
3
40
1365
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
−65
−
−
handbook, halfpage
1600
Ptot
(W)
1200
MRA445
800
400
0
−50
0
50
100
150
200
Tmb (
o
C)
t
p
= 10
µs; δ
= 1%; P
tot max
= 1365 W.
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Z
th j-h
Notes
1. See “Mounting
recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
I
EBO
V
(BR)CBO
V
(BR)CES
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
CONDITIONS
V
CB
= 50 V; I
E
= 0
V
CE
= 50 V; V
BE
= 0
V
EB
= 1.5 V; I
C
= 0
I
C
= 140 mA; V
BE
= 0
I
C
= 140 mA; V
BE
= 0
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
thermal impedance from junction to heatsink
CONDITIONS
T
j
= 120
°C
note 1
t
p
= 10
µs; δ
= 1%;
notes 1 and 2
MX1011B700Y
MAX.
1.12
0.2
0.06
UNIT
K/W
K/W
K/W
MAX.
20
20
5
65
65
UNIT
mA
mA
mA
V
V
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°C
in a broadband test circuit as shown in Fig.3.
MODE OF OPERATION
CONDITIONS
t
p
= 10
µs; δ
= 1%
t
p
= 0.5
µs; δ
= 50%;
t
p
= 112
µs; δ
= 1%
t
p
= 6.6
µs; δ
= 51%;
t
p
= 3.3 ms;
δ
= 43%
t
p
= 32
µs; δ
= 1%
f
(GHz)
1.09
1.03 to 1.09
1.03 to 1.15
1.09
V
CC
(V)
50
50
50
50
P
L
(W)
650;
typ. 740
typ. 650
typ. 300
typ. 700
G
P
(dB)
≥6.0;
typ. 7
typ. 6.4
typ. 7
typ. 6.7
η
C
(%)
≥48;
typ. 55
typ. 45
typ. 45
typ. 55
Class C
1997 Feb 18
4
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