To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HN29V102414 Series
1G AND type Flash Memory
More than 32,113-sector (542,581,248-bit)
×
2
ADE-203-1265B (Z)
Rev. 1.0
Jan. 25, 2002
Description
The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It
has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29V102414 are more than 64,226 (98% of all
sector address) and less than 65,536 sectors.
Features
•
On-board single power supply (V
CC
): V
CC
= 2.7 V to 3.6 V
•
Organization
AND Flash Memory: (2048 + 64) bytes
×
(More than 32,113 sectors)
× 2
Data register: (2048 + 64) bytes
× 2
•
Multi-level memory cell
2 bit/per memory cell
•
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
•
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
HN29V102414 Series
•
Erase mode
Single sector erase ((2048 + 64) byte unit)
•
Fast serial read access time:
First access time: 50
µs
(max)
Serial access time: 50 ns (max)
•
Low power dissipation:
I
CC1
= 2 mA (typ) (Read) (1-chip operation)
I
CC1
= 4 mA (typ) (Read) (2-chip operation)
I
CC2
= 20 mA (max) (Read) (1-chip operation)
I
CC2
= 40 mA (max) (Read) (2-chip operation)
I
SB2
= 50
µA
(max) (Standby) (1-chip operation)
I
SB2
= 100
µA
(max) (Standby) (2-chip operation)
I
CC3
/I
CC4
= 40 mA (max) (Erase/Program) (1-chip operation)
I
CC3
/I
CC4
= 80 mA (max) (Erase/Program) (2-chip operation)
I
SB3
= 20
µA
(max) (Deep standby) (1-chip operation)
I
SB3
= 40
µA
(max) (Deep standby) (2-chip operation)
•
The following architecture is required for data reliability.
Error correction: more than 3-bit error correction per each sector read
Spare sectors: 1.8% (579 sectors)/chip (min) within usable sectors
Ordering Information
Type No.
HN29V102414T-50
Available sector
More than 64,226 sectors
Package
12.0
×
18.40 mm
2
0.5 mm pitch
48-pin plastic TSOP I (TFP-48DA)
2
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