February 1996
NDS9956A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as DC/DC conversion and DC motor
control where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
3.7A, 30V. R
DS(ON)
= 0.08
Ω
@ V
GS
= 10V
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
________________________________________________________________________________
5
4
3
2
1
6
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
NDS9956A
30
± 20
(Note 1a)
Units
V
V
A
± 3.7
± 15
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
°C
T
J
,T
STG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS9956A.SAM
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 24 V, V
GS
= 0 V
T
J
= 55°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
V
GS
= 10 V, I
D
= 2.2 A
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 1.0 A
T
J
= 125°C
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 10 V,
I
D
= 3.7 A, V
GS
= 10 V
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
Ω
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V
V
DS
= 15 V, I
D
= 3.7 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
320
225
85
10
13
21
5
9.5
1.5
3.3
20
20
50
50
27
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
15
3.5
6
S
1
0.7
1.7
1.2
0.06
0.08
0.08
0.11
Min
30
2
25
100
-100
2.8
2.2
0.08
0.13
0.11
0.18
A
Typ
Max
Units
V
µA
µA
nA
nA
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
(Note 2)
Ω
SWITCHING CHARACTERISTICS
(Note 2)
NDS9956A.SAM
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
I
S
V
SD
t
rr
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Parameter
Conditions
Min
Typ
Max
1.2
Units
A
V
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 1.25 A
(Note 2)
0.8
1.3
100
V
GS
= 0 V, I
F
= 1.25 A, dI
F
/dt = 100 A/µs
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
R
θ
J C
R
θ
CA
t
)
+
(
T
J
−
T
A
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78
o
C/W when mounted on a 0.5 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
c. 135
o
C/W when mounted on a 0.003 in
2
pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9956A.SAM
Typical Electrical Characteristics
20
V
GS
=10V
8.0
3
6.0
DRAIN-SOURCE ON-RESISTANCE
, DRAIN-SOURCE CURRENT (A)
5.0
4.5
R
DS(on)
, NORMALIZED
15
V
GS
= 3.5V
2.5
4.0
2
10
4.0
4.5
1.5
5.0
6.0
8.0
10
3.5
5
1
3.0
0
0
1
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
3
I
D
0.5
0
3
6
9
I
D
, DRAIN CURRENT (A)
12
15
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.6
2
DRAIN-SOURCE ON-RESISTANCE
1.4
R
DS(on)
, NORMALIZED
R
DS(ON)
, NORMALIZED
V
G S
= 10V
DRAIN-SOURCE ON-RESISTANCE
I
D
= 3.7A
V
GS
= 10 V
1.5
1.2
TJ = 125°C
1
25°C
1
0.8
-55°C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.5
0
3
6
9
I D , DRAIN CURRENT (A)
12
15
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
10
GATE-SOURCE THRESHOLD VOLTAGE
1.2
V
DS
= 10V
8
I
D
, DRAIN CURRENT (A)
TJ = -55°C
125°C
25°C
1.1
V
DS
= V
GS
I
D
= 250µA
V
th
, NORMALIZED
1
6
0.9
4
0.8
2
0.7
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDS9956A.SAM
Typical Electrical Characteristics
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.12
I
D
= 250µA
10
5
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
BV
DSS
, NORMALIZED
1.08
1
0.5
TJ = 125°C
1.04
25°C
-55°C
0.1
1
0.96
0.01
0.92
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.001
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
1000
800
10
I
D
= 3.7A
V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
= 10V
20V
500
CAPACITANCE (pF)
C iss
300
200
15V
6
C oss
4
100
f = 1 MHz
V
GS
= 0V
C rss
30
2
50
0.1
0.2
0.5
1
2
5
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0
2
4
6
8
Q
g
, GATE CHARGE (nC)
10
12
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
10
, TRANSCONDUCTANCE (SIEMENS)
V
DS
=10V
8
T J = -55°C
25°C
125°C
6
4
2
g
0
0
FS
2
4
6
I
D
, DRAIN CURRENT (A)
8
10
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDS9956A.SAM
嵌入式系统
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