RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet
January 2002
11A, 60V, 0.107 Ohm, Logic Level,
N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49158.
Features
• 11A, 60V
• r
DS(ON)
= 0.107
Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
RFD3055LE
RFD3055LESM
RFP3055LE
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
F3055L
G
F3055L
FP3055LE
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
©2002 Fairchild Semiconductor Corporation
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
RFD3055LE, RFD3055LESM, RFP3055LE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD3055LE, RFD3055LESM,
RFP3055LE
60
60
±
16
11
Refer to Peak Current Curve
Refer to UIS Curve
38
0.25
-55 to 175
300
260
UNITS
V
V
V
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
Ω
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
TO-220AB
TO-251AA, TO-252AA
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 14)
V
DD
= 30V, I
D
= 8A,
I
g(REF)
= 1.0mA
(Figures 20, 21)
TEST CONDITIONS
I
D
= 250
µ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
µ
A
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
16V
I
D
= 8A, V
GS
= 5V (Figure 11)
V
DD
≈
30V, I
D
= 8A,
V
GS
= 4.5V, R
GS
= 32
Ω
(Figures 10, 18, 19)
MIN
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
8
105
22
39
-
9.4
5.2
0.36
350
105
23
-
-
-
MAX
-
3
1
250
±
100
0.107
170
-
-
-
-
92
11.3
6.2
0.43
-
-
-
3.94
62
100
UNITS
V
V
µ
A
µ
A
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2002 Fairchild Semiconductor Corporation
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
SYMBOL
V
SD
t
rr
I
SD
= 8A
TEST CONDITIONS
MIN
TYP
-
-
MAX
1.25
66
UNITS
V
ns
I
SD
= 8A, dI
SD
/dt = 100A/
µ
s
RFD3055LE, RFD3055LESM, RFP3055LE
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
0
125
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
175
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
10
V
GS
= 4.5V
Unless Otherwise Specified
15
5
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
100
200
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
I
D
, DRAIN CURRENT (A)
I
DM
, PEAK CURRENT (A)
100
10
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED T
C
= 25
o
C
1ms
10ms
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
200
10
10
-5
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
RFD3055LE, RFD3055LESM, RFP3055LE
Typical Performance Curves
100
I
AS
, AVALANCHE CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
Unless Otherwise Specified
(Continued)
15
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
12
V
GS
= 5V
V
GS
= 4V
9
V
GS
= 3.5V
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
T
C
= 25
o
C
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
4
1
0.001
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
0
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
15
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
I
D
= 3A
I
D
= 11A
I
D
= 5A
120
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
12
I
D,
DRAIN CURRENT (A)
9
6
T
J
= 25
o
C
90
3
T
J
= 175
o
C
0
2
3
T
J
= -55
o
C
60
4
5
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
150
t
r
100
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
V
GS
= 4.5V, V
DD
= 30V, I
D
= 8A
SWITCHING TIME (ns)
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
t
f
50
t
d(OFF)
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
1.0
V
GS
= 10V, I
D
= 11A
0.5
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
RFD3055LE, RFD3055LESM, RFP3055LE
Typical Performance Curves
1.2
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
Unless Otherwise Specified
(Continued)
1.2
I
D
= 250µA
1.0
1.1
0.8
1.0
0.6
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
C
ISS
=
C
GS
+ C
GD
C, CAPACITANCE (pF)
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DD
= 30V
8
100
C
OSS
≅
C
DS
+ C
GD
6
4
2
V
GS
= 0V, f = 1MHz
10
0.1
C
RSS
=
C
GD
60
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 11A
I
D
= 5A
I
D
= 3A
0
2
4
6
Q
g
, GATE CHARGE (nC)
8
10
0
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
V
DS
BV
DSS
L
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
R
G
-
I
AS
V
DD
t
P
V
DS
V
DD
+
0V
I
AS
0.01Ω
0
t
AV
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
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