Si6542DQ
Vishay Siliconix
Dual N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
r
DS(on)
(W)
0.09 @ V
GS
= 10 V
0.175 @ V
GS
= 4.5 V
I
D
(A)
"2.5
"1.8
"1.9
"1.3
P-Channel
–20
0.17 @ V
GS
= –10 V
0.32 @ V
GS
= –4.5 V
D
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
S
N-Channel MOSFET
D
2
P-Channel MOSFET
D
8
D
2
S
2
S
2
G
2
G
1
G
2
Si6542DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
Symbol
V
DS
V
GS
N-Channel
20
"20
"2.5
"2.0
"20
1.25
1.0
P-Channel
–20
"20
"1.9
"1.5
"15
–1.25
Unit
V
A
W
0.64
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70171
S-00873—Rev. F, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
N- or P-Channel
125
Unit
_C/W
2-1
Si6542DQ
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= –20 V, V
GS
= 0 V, T
J
= 55_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= –5 V, V
GS
= –10 V
V
GS
= 10 V, I
D
= 2.5 A
D i S
O S
R i
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –10 V, I
D
= 1.9 A
V
GS
= 4.5 V, I
D
=
1.8
A
V
GS
= –4.5 V, I
D
= 1.3 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 2.5 A
V
DS
= –15 V, I
D
= – 1.9 A
I
S
= 1.25 A, V
GS
= 0 V
I
S
= –1.25 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
14
A
–10
0.065
0.13
0.100
0.26
5
S
3
0.8
0.8
1.2
V
–1.2
0.09
0.17
0.175
0.32
W
N-Ch
P-Ch
1.0
V
–1.0
"100
1
–1
25
–25
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Diode Forward Voltage
a
V
SD
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
N Ch
Channel
l
V
DS
= 10 V, V
GS
= 10 V, I
D
= 2.5 A
P-Channel
V
DS
= –10 V V
GS
= –10 V I
D
= –1.9 A
10 V,
10 V,
19
Gate-Drain Charge
Q
gd
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N Ch
l
N-Channel
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Channel
V
DD
= –10 V R
L
= 10
W
10 V,
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
1
10
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
t
f
I
F
= 1.25 A, di/dt = 100 A/ms
I
F
= –1.25 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
7
7
0.9
nC
C
1.3
2.1
1.7
11
9
11
12
16
17
6
6
45
35
20
20
20
25
30
ns
30
15
15
70
70
10
10
Gate-Source Charge
Q
gs
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Source-Drain Reverse Recovery Time
t
rr
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70171
S-00873—Rev. F, 01-May-00
Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
6V
16
I
D
– Drain Current (A)
16
I
D
– Drain Current (A)
T
C
= –55_C
25_C
12
125_C
20
N CHANNEL
Transfer Characteristics
V
GS
= 10, 9 ,8 ,7 V
5V
12
8
4V
4
3V
0
0
1
2
3
4
5
8
4
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30
1000
Capacitance
0.25
r
DS(on)
– On-Resistance (
Ω
)
C – Capacitance (pF)
V
GS
= 4.5 V
800
0.20
600
C
iss
400
C
oss
200
C
rss
0
0.15
0.10
V
GS
= 10 V
0.05
0
0
2
4
6
8
10
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
= 10 V
I
D
= 2.5 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
V
GS
– Gate-to-Source Voltage (V)
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
0
1
2
3
4
5
6
7
8
8
1.5
6
1.0
4
0.5
2
0
0
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70171
S-00873—Rev. F, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
T
J
= 150_C
I
S
– Source Current (A)
10
r
DS(on)
– On-Resistance (
Ω
)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.00
0
2
4
6
8
10
I
D
= 2.5 A
N CHANNEL
On-Resistance vs. Gate-to-Source Voltage
T
J
= 25_C
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
1.0
120
Single Pulse Power
100
0.5
V
GS(th)
Variance (V)
80
Power (W)
I
D
= 250
µA
0.0
60
40
–0.5
20
–1.0
–50
0
–25
0
25
50
75
100
125
150
0.001
0.010
0.100
Time (sec)
1.000
10.000
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
2. Per Unit Base = R
thJA
= 125_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
0.01
10
–4
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70171
S-00873—Rev. F, 01-May-00
Si6542DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
15
V
GS
= 10, 9 V
12
I
D
– Drain Current (A)
7V
8V
6V
5V
6
I
D
– Drain Current (A)
12
25_C
9
15
T
C
= –55_C
125_C
P CHANNEL
Transfer Characteristics
9
6
3
4V
3V
3
0
0
1
2
3
4
5
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
1000
Capacitance
r
DS(on)
– On-Resistance (
Ω
)
0.4
V
GS
= 4.5 V
C – Capacitance (pF)
800
C
iss
600
0.3
0.2
V
GS
= 10 V
0.1
400
C
oss
200
C
rss
0
0
2
4
6
8
10
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
= 10 V
I
D
= 1.9 A
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
– Gate-to-Source Voltage (V)
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
8
1.5
V
GS
= 10 V
I
D
= 1.9 A
6
1.0
4
0.5
2
0
0
2
4
6
8
0
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70171
S-00873—Rev. F, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
2-5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
