d. Maximum under Steady State conditions is 58 °C/W (N-Channel) and 53 °C/W (P-Channel).
Document Number: 74410
S-62077-Rev. A, 23-Oct-06
www.vishay.com
1
SUD50NP04-94
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= 10 V, I
D
= 5.2 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= - 10 V, I
D
= - 4.5 A
V
GS
= 4.5 V, I
D
= 4.9 A
V
GS
= - 4.5 V, I
D
= - 3.9 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5.2 A
Total Gate Charge
Q
g
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 4.5 A
N-Channel
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 5.2 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 20 V, V
GS
= - 4.5 V, I
D
= - 4.5 A
f = 1 MHz
N-Ch
N-Channel
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
700
805
76
120
45
85
18
18.5
8
9
1.5
2
2.4
3.6
1.9
11.5
3
18
Ω
27
28
12
14
nC
pF
g
fs
V
DS
= 15 V, I
D
= 5.2 A
V
DS
= - 15 V, I
D
= - 4.5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
0.034
0.044
0.037
0.059
13
18
0.041
0.053
0.045
0.072
S
Ω
0.6
- 0.8
40
- 40
40
- 40
- 3.8
3.4
1.7
- 2.2
100
- 100
1
-1
10
- 10
A
µA
nA
V
Symbol
Test Conditions
Min
Typ
a
Max
Unit
www.vishay.com
2
Document Number: 74410
S-62077-Rev. A, 23-Oct-06
SUD50NP04-94
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
N-Channel
I
F
= 1.7 A, di/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 1.7 A, di/dt = - 100 A/µs, T
J
= 25 °C
I
S
= 1.7 A
I
S
= - 1.7 A
T
C
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.75
- 0.79
25
27
17
17
14
13
11
14
ns
8
-8
35
- 35
1.2
- 1.2
40
45
26
26
V
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
N-Ch
N-Channel
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
P-Channel
V
DD
= - 20 V, R
L
= 4
Ω
I
D
≅
- 5 A, V
GEN
= - 10 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
P-Channel
V
DD
= - 20 V, R
L
= 4
Ω
I
D
≅
- 5 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
6
6
20
22
20
34
8
46
10
30
60
91
30
30
64
47
12
12
30
35
30
55
13
70
15
40
90
137
45
45
96
72
ns
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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