Si4807DY
Vishay Siliconix
P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Gate 1
–30
30
Gate 2
r
DS(ON)
(W)
0.035 @ V
GS
= –10 V
0.054 @ V
GS
= –4.5 V
1.3 @ V
GS
= –10 V
2.2 @ V
GS
= –4.5 V
I
D
(A)
"6
"4.8
"0.9
"0.7
D
SO-8
G
2
G
1
S
S
1
2
3
4
Top View
S
P-Channel MOSFET
8
7
6
5
NC
D
D
D
G
2
G
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
P
D
T
J
, T
stg
"4.8
"30
–1.25
2.3
W
1.0
–55 to 150
_C
"0.7
"1.5
A
Symbol
V
DS
V
GS
Gate 1
–30
"20
"6
Gate 2
Unit
V
"0.9
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
Limit
55
Unit
_C/W
2-1
Si4807DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS1( )
DS1(on)
Drain-Source On State R i
Drain Source On-State Resistance
a
D i S
O S
r
DS2(on)
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
G1S
= 0 V, V
G2S
= –10 V, I
D
= –0.15 A
V
G1S
= 0 V, V
G2S
= –4.5 V, I
D
= –0.1 A
V
DS
= –15 V, I
D
= –6 A
I
S
= –1.25 A, V
GS
= 0 V
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –30 V, V
GS
= 0 V
V
DS
= –30 V, V
GS
= 0 V, T
J
= 55_C
(G
1
= G
2
) V
DS
= –5 V, V
GS
= –10 V
(G
1
= G
2
) V
GS
= –10 V, I
D
= –6 A
(G
1
= G
2
) V
GS
= –4.5 V, I
D
= –4.8 A
–20
0.028
0.041
1.05
1.65
13
0.7
–1.1
0.035
0.054
1.3
2.2
S
V
W
–1
"100
–1
–5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Gate 1
Total Gate Charge
Q
g
Gate 1
G
V
DS
= –15 V, V
GS(1 2)
= –10 V
GS(1,
I
D
= –6 A
Gate 2
V
DS
= –15 V, V
GS(1)
= –
0
V
V
V
GS(2)
= –10 V, I
D
= –0.15 A
Gate 2
Gate 1
Gate 2
Gate 1
Gate 2
34
2.0
6.5
C
nC
0.5
6.0
0.2
15
V
DD
= –15 V, R
L
= 15
W
15 V,
I
D
^
–1 A, V
GEN
= –10 V R
G
= 6
W
1A
10 V,
11
52
20
I
F
= –1.25 A, di/dt = –100 A/ms
30
25
20
80
35
60
ns
60
5
Gate-Source Charge
Q
gs
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
Si4807DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (V
G1
= V
G2
, 25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 10, 9, 8, 7, 6, 5 V
25
25
30
Transfer Characteristics
I
D
– Drain Current (A)
20
I
D
– Drain Current (A)
4V
20
15
15
10
2, 1 V
3V
10
T
C
= 125_C
25_C
–55_C
5
5
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
3500
3000
r
DS(on)
– On-Resistance (
W
)
0.12
C – Capacitance (pF)
2500
2000
1500
1000
C
iss
Capacitance
0.09
0.06
V
GS
= 4.5 V
V
GS
= 10 V
0.03
500
0
0
6
12
18
24
30
I
D
– Drain Current (A)
0
0
C
rss
5
C
oss
10
15
20
25
30
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 6 A
V
GS
– Gate-to-Source Voltage (V)
Gate Charge
1.8
1.6
r
DS(on)
– On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
0.4
–50
On-Resistance vs. Junction Temperature
V
G1S
= 10 V
I
D
= 6 A
8
6
4
2
0
0
5
10
15
20
25
30
35
Q
g
– Total Gate Charge (nC)
0
50
100
150
T
J
– Junction Temperature (_C)
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si4807DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (V
G1
= V
G2
, 25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
0.15
On-Resistance vs. Gate-to-Source Voltage
10
I
S
– Source Current (A)
r
DS(on)
– On-Resistance (
W
)
0.12
T
J
= 150_C
0.09
0.06
I
D
= 6 A
0.03
T
J
= 25_C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
Threshold Voltage
0.8
0.6
0.4
0.2
–0.0
–0.2
–0.4
–0.6
–50
10
I
D
= 250
mA
40
Power (W)
60
50
V
GS
– Gate-to-Source Voltage (V)
Single Pulse Power
T
C
= 25_C
Single Pulse
V
GS(th)
Variance (V)
30
20
0
0
50
T
J
– Temperature (_C)
100
150
0.01
0.1
1
Time (sec)
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
2. Per Unit Base = R
thJA
= 55_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
Si4807DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (V
G1
= 0 V, 25_C UNLESS NOTED)
Output Characteristics
4.0
3.5
3.0
I
D
– Drain Current (A)
2.5
2.0
6V
1.5
1.0
0.5
0
0
2
4
6
8
10
3, 2, 1 V
5V
4V
8V
V
G2S
= 10 V
9V
r
DS(on)
– On-Resistance (
W
)
8
10
On-Resistance vs. Drain Current
7V
6
4
V
G2S
= 4.5 V
2
V
G2S
= 10 V
0
0
0.2
0.4
0.6
0.8
1.0
V
DS
– Drain-to-Source Voltage (V)
10
I
D
– Drain Current (A)
Gate Charge
10
On-Resistance vs. Gate-to-Source Voltage
V
G2S
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 150 mA
6
r
DS(on)
– On-Resistance (
W
)
8
8
6
4
4
I
D
= 150 mA
2
2
0
0
0.4
0.8
1.2
1.6
2.0
0
0
2
4
6
8
10
Q
g
– Total Gate Charge (nC)
V
G2S
– Gate-to-Source Voltage (V)
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
2-5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
