SOT323 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 – MARCH 2007
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (I
C
)
APPLICATIONS
* Ideally suited for space / weight critical applications
ZUMT491
C
E
B
SOT323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
80
60
5
2
1
200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector Base
Breakdown Voltage
Collector Emitter
Breakdown Voltage
Emitter Base
Breakdown Voltage
Collector Cut Off
Current
Collector Cut Off
Current
Emitter Cut Off Current
Collector Emitter
Saturation Voltage
Base Emitter
Saturation Voltage
Base Emitter
Turn On Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
MIN.
80
60
5
100
100
100
0.25
0.50
1.1
1.0
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100µA, I
E
=0
I
C
=10mA*, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=60V
VCE=60V
V
EB
=4V, I
C
=0
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=5V*
* Measured under pulsed conditions. Pulse width 300µS. Duty cycle
2%.
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