DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
BC857M series
PNP general purpose transistors
Product data sheet
Supersedes data of 2003 Jul 15
2004 Mar 10
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Leadless ultra small plastic package
(1 mm
×
0.6 mm
×
0.5 mm)
•
Board space 1.3
×
0.9 mm
•
Power dissipation comparable to SOT23.
APPLICATIONS
•
General purpose small signal DC
•
Low and medium frequency AC applications
•
Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: BC847M series.
MARKING
TYPE NUMBER
BC857AM
BC857BM
BC857CM
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC857AM
BC857BM
BC857CM
−
DESCRIPTION
MARKING CODE
D1
D2
D3
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
PINNING
PIN
1
2
3
base
emitter
collector
BC857M series
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
MAX.
−45
−100
−200
UNIT
V
mA
mA
DESCRIPTION
handbook, halfpage
3
3
1
2
2
1
Bottom view
MAM469
Fig.1 Simplified outline (SOT883) and symbol.
VERSION
SOT883
Leadless ultra small plastic package; 3 solder lands; body
1.0 x 0.6 x 0.5 mm
2004 Mar 10
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T
amb
≤
25
°C
note 1
note 2
T
stg
T
j
T
amb
Notes
storage temperature
junction temperature
operating ambient temperature
−
−
−65
−
−65
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
MIN.
BC857M series
MAX.
−50
−45
−5
−100
−200
−100
250
430
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
mW
°C
°C
°C
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μm
copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 2
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μm
copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
500
290
K/W
K/W
VALUE
UNIT
2004 Mar 10
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
BC857AM
BC857BM
BC857CM
V
BE
V
CEsat
C
c
f
T
F
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
base-emitter voltage
collector-emitter saturation voltage
collector capacitance
transition frequency
noise figure
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−2
mA
125
220
420
−600
−
−
−
−
100
−
−
−
−
BC857M series
MIN.
MAX.
−15
−5
−100
250
475
800
−750
−820
−200
−400
2.5
−
10
UNIT
nA
μA
nA
mV
mV
mV
mV
pF
MHz
dB
2004 Mar 10
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
GRAPHICAL INFORMATION BC857AM
MLE188
BC857M series
handbook, halfpage
500
handbook, halfpage
−1200
VBE
(mV)
−1000
MLE189
hFE
400
(1)
(1)
300
−800
(2)
200
(2)
−600
(3)
100
−400
(3)
0
−10
−2
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−200
−10
−2
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
V
CE
=
−5
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
=
−5
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.3
Fig.2 DC current gain; typical values.
Base-emitter voltage as a function of
collector current; typical values.
−10
4
handbook, halfpage
VCEsat
(mV)
−10
3
MLE190
handbook, halfpage
−1200
MLE191
VBEsat
(mV)
−1000
(1)
(2)
−800
−10
2
(1)
(2)
(3)
−600
(3)
−400
−10
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
−200
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 20.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
5
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
