VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
Vishay Semiconductors
Fast Recovery Diodes, 250 A
(MAGN-A-PAK Power Modules)
FEATURES
• Fast recovery time characteristics
• Electrically isolated base plate
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• 3000 V
RMS
isolating voltage
• UL approved file E78996
MAGN-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
Type
250 A
Modules - Diode, Fast
The VSK.L240 Series of MAGN-A-PAKs uses fast recovery
power diodes in four basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. Application includes power supplies, battery
chargers, welders, motor controls and general industrial
current rectification. These modules are intended for those
applications where fast recovery characteristics are
required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.L240
S10/S20
250
T
C
50 Hz
60 Hz
50 Hz
60 Hz
100
392
8000
8400
322
294
3220
Range
Range
600 to 2500
- 40 to 150
S30
240
100
377
7500
7850
280
256
2800
kA
2
s
kA
2
s
V
°C
A
UNITS
A
°C
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
Document Number: 93164
Revision: 16-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
06
10
VSK.L240
12
14
20
25
t
rr
CODE
S10
S10
S20
S20
S30
S30
V
RRM,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
600
1000
1200
1400
2000
2500
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
700
1100
1300
1500
2100
2600
50
I
RRM
MAXIMUM
AT 150 °C
mA
Fast Recovery Diodes, 250 A
(MAGN-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
TEST CONDITIONS
VSK.L240
S10/S20
250
100
392
8000
8400
6750
Sinusoidal half wave,
initial T
J
= T
J
maximum
7100
322
294
228
208
3220
0.98
1.31
0.75
0.41
1.57
S30
240
100
377
7500
7850
6300
6600
280
256
198
181
2800
0.98
1.31
0.97
0.60
1.75
V
m
kA
2
s
V
kA
2
s
A
UNITS
A
°C
I
F(AV)
I
F(RMS)
180° conduction, half sine wave
As AC switch
t = 10 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Maximum peak, one-cycle forward
non-repetitive, surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
FM
= 800 A, T
J
= 150 °C, t
p
= 10 ms
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93164
Revision: 16-Jul-10
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
Fast Recovery Diodes, 250 A
(MAGN-A-PAK Power Modules)
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
( s)
1.0
2.0
3.0
500
100
- 50
TEST CONDITIONS
I
pk
SQUARE PULSE
(A)
dI/dt
(A/ s)
V
r
(V)
TYPICAL VALUES
AT T
J
= 150 °C
t
rr
AT 25 % I
RRM
( s)
2.7
3.5
3.6
Q
rr
( C)
135
250
360
I
r
(A)
100
145
200
I
FM
t
rr
t
Q
rr
I
RM(REC)
Vishay Semiconductors
S10
S20
S30
di
dt
BLOCKING
PARAMETER
Maximum peak reverse leakage current
RMS insulation voltage
SYMBOL
I
RRM
V
INS
TEST CONDITIONS
T
J
= 150 °C, leakage current
50 Hz, circuit to base, all terminals shorted,
25 °C, t = 1 s
VALUES
50
3000
UNITS
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum internal thermal resistance,
junction to case per junction
Thermal resistance,
case to heatsink per module
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP
Approximate weight
Case style
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of about 3 hours to allow for the
spread of the compound.
TEST CONDITIONS
VALUES
- 40 to 150
0.125
K/W
0.02
4 to 6
Nm
8 to 10
850
30
MAGN-A-PAK
g
oz.
UNITS
°C
R
CONDUCTION PER JUNCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.008
0.010
0.013
0.019
0.032
RECTANGULAR CONDUCTION
0.007
0.011
0.015
0.020
0.033
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 93164
Revision: 16-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
Vishay Semiconductors
150
140
130
120
110
100
90
80
0
50
100
150
200
250
300
Average F
orward Current (A)
30°
60°
90°
120°
180°
Conduction Angle
Fast Recovery Diodes, 250 A
(MAGN-A-PAK Power Modules)
Maximum Average Forward Pow er Loss (W)
600
500
400
300
RMS Limit
200
100
0
0
50
100 150 200 250 300 350 400
Average Forward Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
VSK.L240..S S S
10/ 20 eries
R
thJC
(DC) = 0.125 K/ W
DC
180°
120°
90°
60°
30°
VSK.L240..S S S
10/ 20 eries
T
J
= 150°C Per Junc tion
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
Peak Half S Wave Forward Current (A)
ine
150
140
130
120
110
30°
100
90
80
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
60°
90°
120°
180°
DC
Conduction Period
8000
VSK.L240..S S S
10/ 20 eries
R
thJC
(DC) = 0.125 K/ W
At Any Rated Load Condition And With
Rated V
RRM
App lied Following S
urge.
7000
Initial T
J
150°C
=
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6000
5000
4000
3000
VSK.L240..S S S
10/ 20 eries
Per Junc tion
2000
1
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Los (W)
s
ine
Peak Half S Wave Forward Current (A)
400
350
300
250
200
150
Conduction Angle
8500
7500
6500
5500
4500
3500
2500
VSK.L240..S S S
10/ 20 eries
Per Junction
0.1
Pulse T
rain Dura tion (s)
1
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Dura tion.
Initial T
J
= 150°C
No Vo ltage Reap plied
Rated V
RRM
R
eap plied
180°
120°
90°
60°
30°
RMS Limit
100
50
0
0
50
100
150
200
250
Average F
orward Current (A)
VSK.L240..S S S
10/ 20 eries
Per Junc tion T
J
= 150°C
1500
0.01
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93164
Revision: 16-Jul-10
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
Fast Recovery Diodes, 250 A
(MAGN-A-PAK Power Modules)
Maximum Allowable Case T
emperature (°C)
Vishay Semiconductors
Maximum Averag e Forward Power Los (W)
s
150
140
130
120
110
100
90
80
0
50
100
150
200
250
Average F
orward Current (A)
30°
Conduction Angle
550
500
450
400
350
300
250 RMS Limit
200
150
100
50
0
0
50
100 150 200 250 300 350 400
Average F
orward Current (A)
VSK.L240..S
30 S
eries
Per Junc tion
T
J
= 150°C
Cond uc tion Period
VSK.L240..S S
30 eries
R
thJC
(DC) = 0.125 K/ W
DC
180°
120°
90°
60°
30°
60°
90°
120°
180°
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
140
130
120
110
30°
100
90
80
0
50
VSK.L240..S S
30 eries
R
thJC
(DC) = 0.125 K/ W
Peak Half S Wave F
ine
orward Current (A)
150
7000
At Any Ra ted Loa d Co nd ition And With
Ra ted V
R
urge.
RM
Ap plied Following S
Initia l T = 150°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6000
Conduc tion Period
5000
4000
60°
90°
120°
180°
DC
3000
VSK.L240..S S
30 eries
Per Junc tion
2000
1
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
100 150 200 250 300 350 400
Average Forward Current (A)
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Loss (W)
Peak Half S Wave Forward Current (A)
ine
400
350
300
250
200
150
Conduc tion Angle
8000
7000
6000
5000
4000
3000
2000
1000
0.01
180°
120°
90°
60°
30°
R Limit
MS
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Dura tion.
Initia l T
J
= 150°C
No Voltage Rea pplied
Rated V
RRM
Rea pplied
100
50
0
0
50
100
150
200
250
Average Forward Current (A)
VSK.L240..S S
30 eries
Per Junc tion
T
J
= 150°C
VSK.L240..S S
30 eries
Per Junc tion
0.1
Pulse T
rain Duration (s)
1
Fig. 9 - Forward Power Loss Characteristics
Fig. 12 - Maximum Non-Repetitive Surge Current
Document Number: 93164
Revision: 16-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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