NSBC114EPDXV6T1G,
NSBC114EPDXV6T5G
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDXV6T1
series, two complementary BRT devices are housed in the SOT−563
package which is ideal for low power surface mount applications
where board space is at a premium.
Features
(3)
http://onsemi.com
(2)
R
1
Q
1
R
2
(4)
R
2
Q
2
R
1
(5)
(6)
(1)
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
These are Pb−Free Devices
6
1
SOT−563
CASE 463A
PLASTIC
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,
−
minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
MARKING DIAGRAM
xx MG
G
xx = Specific Device Code
(see table on page 2)
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
Thermal Resistance (Note 1)
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
Thermal Resistance (Note 1)
Junction-to-Ambient
Junction and Storage Temperature
Symbol
P
D
Max
357
2.9
350
Max
500
4.0
250
−55
to +150
Unit
mW
mW/°C
°C/W
ORDERING INFORMATION
Device
Package
Shipping
†
4 mm pitch
4000/Tape & Reel
2 mm pitch
8000/Tape & Reel
R
qJA
NSBC114EPDXV6T1G
SOT−563
NSBC114EPDXV6T5G
SOT−563
Symbol
P
D
Unit
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2008
November, 2008
−
Rev. 5
1
Publication Order Number:
NSBC114EPDXV6/D
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
DEVICE MARKING AND RESISTOR VALUES
Device
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G (Note 2)
NSBC143TPDXV6T1G (Note 2)
NSBC113EPDXV6T1G (Note 2)
NSBC123EPDXV6T1G (Note 2)
NSBC143EPDXV6T1G (Note 2)
NSBC143ZPDXV6T1G (Note 2)
NSBC124XPDXV6T1G (Note 2)
NSBC123JPDXV6T1G (Note 2)
Package
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Marking
11
12
13
14
15
16
30
31
32
33
34
35
R1 (kW)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
R2 (kW)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,
−
minus sign for Q
1
(PNP) omitted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
−
−
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
V
(BR)CBO
V
(BR)CEO
h
FE
Vdc
Vdc
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
http://onsemi.com
2
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,
−
minus sign for Q
1
(PNP) omitted)
Characteristic
ON CHARACTERISTICS
(Note 3)
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC143TPDXV6T1G
NSBC123JPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC114TPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
NSBC144EPDXV6T1G
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC143TPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
NSBC113EPDXV6T1G
NSBC114TPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
V
CE(sat)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
Symbol
Min
Typ
Max
Unit
(I
C
= 10 mA, I
B
= 5 mA)
(I
C
= 10 mA, I
B
= 1 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
Vdc
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
http://onsemi.com
3
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
,
−
minus sign for Q
1
(PNP) omitted)
Characteristic
ON CHARACTERISTICS
(Note 3)
Input Resistor
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
0.8
0.8
0.8
0.17
−
−
0.8
0.8
0.8
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
1.0
1.0
0.21
−
−
1.0
1.0
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
1.2
1.2
0.25
−
−
1.2
1.2
1.2
0.185
0.56
0.056
k
W
Symbol
Min
Typ
Max
Unit
Resistor Ratio
R1/R2
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
−50
R
qJA
= 490°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
http://onsemi.com
4
NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
TYPICAL ELECTRICAL CHARACTERISTICS
−
NSBC114EPDXV6T1 NPN TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= -25°C
25°C
0.1
75°C
1000
hFE, DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= 75°C
25°C
-25°C
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
25°C
T
A
= -25°C
C ob, CAPACITANCE (pF)
3
1
2
0.1
1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= -25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
