Si1901DL
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–20
r
DS(on)
(W)
3.8 @ V
GS
= –4.5 V
5.0 @ V
GS
= –2.5 V
I
D
(mA)
–180
–100
SOT-363
SC-70 (6-Leads)
Marking Code
QD
G
1
D
2
2
3
5
4
G
2
S
2
XX
YY
Lot Traceability
and Date Code
Part # Code
S
1
1
6
D
1
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
Limit
–20
"8
–180
–140
–500
0.20
0.13
–55 to 150
Unit
V
mA
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Symbol
R
thJA
Limit
625
Unit
_C/W
Document Number: 71304
S-01886—Rev. A, 28-Aug-00
www.vishay.com
1
Si1901DL
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
DS
= 0 V, I
D
= –10
mA
V
DS
= V
GS
, I
D
= –50
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –20 V, V
GS
= 0 V
V
DS
= –20 V, V
GS
= 0 V, T
J
= 55_C
V
GS
v
–4.5 V, V
DS
= –8.0 V
V
GS
v
–2.5 V, V
DS
= –5.0 V
V
GS
= –4.5 V, I
D
= –180 mA
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= –2.5 V, I
D
=
–400
mA
–120
2.6
4.0
200
–0.7
–1.2
3.8
5.0
W
mS
V
–20
–0.4
–24
V
–0.9
"2
–0.001
–1.5
"100
–100
–1
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
On-State Drain Current
a
I
D(on)
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
–
75 mA
V
DS
= –2.5 V, I
D
= –50 mA
I
S
= –50 mA, V
GS
= 0 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
MHz
V
DS
= –5.0 V, V
GS
= 0 V, f = 1 MH
50 V
V
V
DS
= –5.0 V, V
GS
= –4.5 V I
D
= –100 mA
50V
4 5 V,
100 A
350
25
125
20
14
5
pF
F
450
pC
C
Switching
b, c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –3.0 V, R
L
= 100
W
3 0 V,
I
D
= –0.25 A, V
GEN
= –4.5 V R
G
= 10
W
0 25 A
4 5 V,
7
25
19
9
12
35
ns
30
15
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
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Document Number: 71304
S-01886—Rev. A, 28-Aug-00
Si1901DL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.2
5V
0.4
4.5 V
0.8
4V
3.5 V
3V
2.5 V
2V
0
0
1
2
3
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
– Drain Current (A)
25_C
0.3
125_C
0.2
0.5
T
C
= –55_C
Vishay Siliconix
Transfer Characteristics
1.0
I
D
– Drain Current (A)
0.6
0.4
0.2
0.1
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
8
45
Capacitance
r
DS(on)
– On-Resistance (
W
)
36
C – Capacitance (pF)
6
V
GS
= 2.5 V
4
V
GS
= 4.5 V
2
27
C
iss
18
C
oss
9
C
rss
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
3
6
9
12
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 80 mA
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 180 m A
6
r
DS(on)
– On-Resistance (
W)
(Normalized)
200
300
400
500
600
8
1.4
1.2
4
1.0
2
0.8
0
0
100
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (pC)
T
J
– Junction Temperature (_C)
Document Number: 71304
S-01886—Rev. A, 28-Aug-00
www.vishay.com
3
Si1901DL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1
T
J
= 150_C
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (A)
6
On-Resistance vs. Gate-to-Source Voltage
5
0.1
4
I
D
= 180 mA
3
0.01
T
J
= 25_C
2
1
0.001
0.00
0.5
01
1.5
0
1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.3
I
D
= 50
mA
0.2
V
GS(th)
Variance (V)
0.1
0.0
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
T
J
– Temperature (_C)
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4
Document Number: 71304
S-01886—Rev. A, 28-Aug-00
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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