Si1557DH
Vishay Siliconix
N- and P-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
12
R
DS(on)
(Ω)
0.235 at V
GS
= 4.5 V
0.280 at V
GS
= 2.5 V
0.340 at V
GS
= 1.8 V
0.535 at V
GS
= - 4.5 V
P-Channel
- 12
0.880 at V
GS
= - 2.5 V
1.26 at V
GS
= - 1.8 V
I
D
(A)
1.3
1.2
1.0
- 0.86
- 0.67
- 0.56
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Thermally Enhanced SC-70 Package
• Fast Switching to Minimize Gate and Switching
Losses
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Baseband dc-to-dc Converter Switch for Portable
Electronics
SOT-363
SC-70 (6-LEADS)
S
1
1
6
D
1
Marking Code
EC
G
1
2
5
G
2
XX
YY
Lot Traceability
and Date Code
Part # Code
D
2
3
4
S
2
Top View
Ordering Information:
Si1557DH-T1-E3 (Lead (Pb)-free)
Si1557DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.5
0.6
0.3
1.3
0.9
3
0.39
0.47
0.25
- 0.5
0.6
0.3
- 55 to 150
1.2
0.8
5s
Steady State
12
±8
- 0.86
- 0.62
-2
- 0.39
0.47
0.25
W
°C
- 0.77
- 0.55
A
5s
P-Channel
Steady State
- 12
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
170
220
105
Maximum
210
265
125
°C/W
Unit
Document Number: 71944
S10-1054-Rev. C, 03-May-10
www.vishay.com
1
Si1557DH
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 100 µA
V
DS
= V
GS
, I
D
= - 100 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 9.6 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 9.6 V, V
GS
= 0 V
V
DS
= 9.6 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 9.6 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 1.2 A
V
GS
= - 4.5 V, I
D
= - 0.77 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 1.0 A
V
GS
= - 2.5 V, I
D
= - 0.6 A
V
GS
= 1.8 V, I
D
= 0.2 A
V
GS
= - 1.8 V, I
D
= - 0.2 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 0.1 A
N-Ch
N-Channel
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 1.2 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 6 V, R
L
= 12
Ω
I
D
≅
0.5 A, V
GEN
= 4.5 V, R
g
= 6
Ω
P-Channel
V
DD
= - 6 V, R
L
= 12
Ω
I
D
≅
- 0.5 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
I
F
= 0.39 A, dI/dt = 100 A/µs
I
F
= - 0.39 A, dI/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8
1.1
0.15
0.3
0.20
0.25
15
17
25
30
25
15
10
10
20
25
25
25
40
45
40
25
15
15
40
40
ns
1.2
1.8
nC
g
fs
V
SD
V
DS
= 5 V, I
D
= 1.2 A
V
DS
= - 5 V, I
D
= - 0.77 A
I
S
= 0.39 A, V
GS
= 0 V
I
S
= - 0.39 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3
-2
0.195
0.445
0.230
0.735
0.284
1.05
0.8
1.2
0.8
- 0.8
1.2
- 1.2
0.235
0.535
0.280
0.880
0.340
1.26
S
V
Ω
0.45
- 0.45
1
1
± 100
± 100
1
-1
5
-5
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71944
S10-1054-Rev. C, 03-May-10
Si1557DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4
V
GS
= 5 V thru 2.5 V
3
I
D
- Drain Current (A)
2V
I
D
- Drain Current (A)
3
4
T
C
= - 55 °C
25 °C
125 °C
2
2
1.5 V
1
1V
0
0
1
2
3
4
1
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.6
100
Transfer Characteristics
0.5
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
80
C
iss
60
0.4
V
GS
= 1.8 V
0.3
V
GS
= 2.5 V
0.2
V
GS
= 4.5 V
40
C
oss
20
C
rss
0.1
0.0
0
1
2
I
D
- Drain Current (A)
3
4
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
DS
= 6 V
I
D
= 1.2 A
4
R
DS(on)
- On-Resistance
1.4
1.6
V
GS
= 4.5 V
I
D
= 1.2 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
(Normalized)
3
1.2
2
1.0
1
0.8
0
0.0
0.2
0.4
0.6
0.8
1.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total
Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71944
S10-1054-Rev. C, 03-May-10
www.vishay.com
3
Si1557DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4
0.6
0.5
T
J
= 150 °C
1
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.4
I
D
= 1.2 A
0.3
I
D
= 0.2 A
T
J
= 25 °C
0.2
0.1
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
Source-Drain Diode Forward Voltage
0.2
5
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.1
4
I
D
= 100
µA
V
GS(th)
Variance (V)
0.0
Power (W)
3
- 0.1
2
- 0.2
1
- 0.3
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
10
Limited
by R
DS(on)
*
I
DM
Limited
Single Pulse Power
I
D
- Drain Current (A)
1
1 ms
I
D
Limited
10 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS
Limited
0.01
0.1
1
10
100
100 ms
1 s, 10 s, DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
>
minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 71944
S10-1054-Rev. C, 03-May-10
Si1557DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 220 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 71944
S10-1054-Rev. C, 03-May-10
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
