SUP/SUB85N03-07P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(W)
0.007 @ V
GS
= 10 V
0.01 @ V
GS
= 4.5 V
I
D
(A)
a
85
a
75
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP85N03-07P
D S
S
N-Channel MOSFET
Top View
SUB85N03-07P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
175 C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
85
a
64
240
75
280
107
c
3.75
–55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71147
S-00757—Rev. B, 10-Apr-00
www.vishay.com
S
FaxBack 408-970-5600
R
thJA
R
thJC
Symbol
Limit
40
62.5
1.4
Unit
_C/W
2-1
SUP/SUB85N03-07P
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
D i S
O S
Drain-Source On-State R i
Drain Source On State Resistance
a
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
r
DS( )
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
20
120
0.006
0.007
0.011
0.015
0.01
S
W
30
V
1
2
"100
1
50
250
A
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
b
Gate-Source Charge
b
Gate-Drain Charge
b
Turn-On Delay Time
b
Rise Time
b
Turn-Off Delay Time
b
Fall Time
b
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0 18
W
V,
0.18
I
D
^
85 A, V
GEN
= 10 V R
G
= 2 5
W
A
V,
2.5
V
DS
= 15 V, V
GS
= 10 V I
D
= 85 A
V
V,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3720
715
370
60
13
10
11
70
50
105
25
140
ns
100
200
120
nC
C
pF
F
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
I
S
I
SM
V
SD
t
rr
I
F
= 85 A, V
GS
= 0 V
I
F
= 85 A, di/dt = 100 A/ms
1.2
55
85
A
200
1.5
100
V
ns
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 71147
S-00757—Rev. B, 10-Apr-00
SUP/SUB85N03-07P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 6 V
200
I
D
– Drain Current (A)
I
D
– Drain Current (A)
5V
100
120
Vishay Siliconix
Transfer Characteristics
80
150
4V
100
60
40
T
C
= 125_C
25_C
–55_C
50
2V
3V
20
0
0
2
4
6
8
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
120
T
C
= –55_C
25_C
80
125_C
60
r
DS(on)
– On-Resistance (
W
)
100
g
fs
– Transconductance (S)
0.015
0.020
On-Resistance vs. Drain Current
0.010
V
GS
= 4.5 V
V
GS
= 10 V
40
0.005
20
0
0
20
40
60
80
100
0
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
5000
C
iss
10
Gate Charge
4000
C – Capacitance (pF)
V
GS
– Gate-to-Source Voltage (V)
8
V
DS
= 50 V
I
D
= 85 A
3000
6
2000
C
oss
1000
C
rss
0
0
6
12
18
24
30
4
2
0
0
12
24
36
48
60
V
DS
– Drain-to-Source Voltage (V)
Document Number: 71147
S-00757—Rev. B, 10-Apr-00
Q
g
– Total Gate Charge (nC)
www.vishay.com
S
FaxBack 408-970-5600
2-3
SUP/SUB85N03-07P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.6
I
S
– Source Current (A)
100
Source-Drain Diode Forward Voltage
1.2
T
J
= 150_C
10
T
J
= 25_C
0.8
0.4
0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
40
Drain Source Breakdown vs.
Junction Temperature
38
100
I
AV
(A) @ T
A
= 25_C
I
Dav
(a)
10
I
AV
(A) @ T
A
= 150_C
1
V
(BR)DSS
(V)
36
I
D
= 250
mA
34
32
0.1
0.00001
0.0001
0.001
0.01
0.1
1
30
–50
–25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
– Junction Temperature (_C)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71147
S-00757—Rev. B, 10-Apr-00
SUP/SUB85N03-07P
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
1000
Vishay Siliconix
Safe Operating Area
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
10
ms
100
ms
10
Limited
by r
DS(on)
60
1 ms
10 ms
100 ms
dc
40
20
1
T
C
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
– Ambient Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71147
S-00757—Rev. B, 10-Apr-00
www.vishay.com
S
FaxBack 408-970-5600
2-5
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