TECHNICAL NOTE
HIGH GRADE Specification HIGH RELIABILITY series
Microwire BUS Serial EEPROMs
Supply voltage 2.5V~5.5V
Operating temperature –40°C~+105°C type
BR93A46-W, BR93A56-W, BR93A66-W, BR93A76-W, BR93A86-W
Description
BR93A□□-W series is a serial EEPROM of serial 3-line interface method.
Features
•
•
•
•
•
•
•
•
3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)
Actions available at high speed 2MHz clock (2.5V ~ 5.5V)
Speed write available (write time 5 ms max.)
Same package and pin layout from 1Kbit to 16Kbit
2.5 ~ 5.5V single power source action
Highly reliable connection by Au pad and Au wire
Address auto increment function at read action
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code
Write mistake prevention function at low voltage
Program cycle auto delete and auto end function
Program condition display by READY / BUSY
Low current consumption
At write action (at 5V)
: 1.2mA (Typ.)
At read action (at 5V)
: 0.3mA (Typ.)
At standby action (at 5V) : 0.1µA (Typ.) (CMOS input)
TTL compatible input / output
Compact package SOP8, SOP-J8,
Data retention for 40 years
Data rewrite up to 1,000,000 times
Data at shipment all addresses FFFFh
•
•
•
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•
•
•
•
BR93A Series
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
Bit format
64
×
16
128
×
16
256
×
16
512
×
16
1K
×
16
Type
Package type
BR93A46-W
BR93A56-W
BR93A66-W
BR93A76-W
BR93A86-W
2.5 ~ 5.5V
2.5 ~ 5.5V
2.5 ~ 5.5V
2.5 ~ 5.5V
2.5 ~ 5.5V
Power source voltage
SOP8
F
●
●
●
●
●
RF
●
●
●
●
●
SOP-J8
FJ
●
●
●
●
●
RFJ
●
●
●
●
●
SSOP-B8
FV
RFV
TSSOP-B8
FVT
RFVT
MSOP8 TSSOP-B8J
RFVM
RFVJ
Ver.A Oct.2005
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Impressed voltage
Permissible dissipation
Storage temperature range
Action temperature range
Terminal voltage
Symbol
V
CC
Pd
Tstg
Topr
-
Limits
-0.3
~
+6.5
SOP8
(F,
RF)
SOP-J8
(FJ,
RFJ)
-65
~
+125
-40
~
+105
-0.3
~
V
CC
+0.3
Unit
V
450
(*1)
450
(*2)
mW
°C
°C
V
* When using at Ta = 25˚C or higher, 4.5mW (*1, *2) to be reduced per 1˚C.
Recommended action conditions
Parameter
Power source voltage
Input voltage
Symbol
V
CC
V
IN
Limits
2.5 ~ 5.5
0 ~ V
CC
Unit
V
V
Electrical characteristics (Unless otherwise specified, Ta=-40 ~ +105˚C, Vcc=2.5 ~ 5.5V)
Parameter
Symbol
Min.
-0.3
-0.3
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
+0.8
0.2xV
CC
Unit
V
V
V
V
V
V
V
V
µA
µA
mA
mA
mA
µA
Conditions
"L" input voltage 1
"L" input voltage 2
"H" input voltage 1
"H" input voltage 2
"L" output voltage 1
"L" output voltage 2
"H" output voltage 1
"H" output voltage 2
Input leak current
Output leak current
Current consumption at
action
Standby current
Radiation resistance design is not made.
V
IL1
V
IL2
V
IH1
V
IH2
V
OL1
V
OL2
V
OH1
V
OH2
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
SB
4.0V V
CC
5.5V
V
CC
4.0V
4.0V V
CC
5.5V
V
CC
4.0V
I
OL
=2.1mA, 4.0V V
CC
5.5V
I
OL
=100µA
I
OH
=-0.4mA, 4.0V V
CC
5.5V
I
OH
=-100µA
V
IN
=0~V
CC
V
OUT
=0~V
CC
, CS=0V
f
SK
=2MHz, t
E/W
=5ms (WRITE)
f
SK
=2MHz (READ)
f
SK
=2MHz, t
E/W
=5ms (WRAL,ERAL)
CS=0V, DO=OPEN
2.0
0.7xV
CC
V
CC
+0.3
V
CC
+0.3
0.4
0.2
0
0
2.4
V
CC
-0.2
-1
-1
-
-
-
-
V
CC
V
CC
+1
+1
3.0
1.5
4.5
2
Memory cell characteristics (Vcc=2.5 ~ 5.5V)
Parameter
Number of data rewrite times *1
Data hold years
*1
Min.
1,000,000
1,00,000
Typ.
-
-
-
-
Max.
-
-
-
-
Unit
Times
Times
Years
Years
Conditions
Ta≦25°C
Ta≦105°C
Ta≦25°C
Ta≦50°C
*1 Not 100% TESTED
40
10
2/16
Action timing characteristics (Ta=-40 ~ +105˚C, Vcc=2.5 ~ 5.5V)
Parameter
SK frequency
SK "H" time
SK "L" time
CS "L" time
CS setup time
DI setup time
CS hold time
DI hold time
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
E/W
Min.
-
230
230
200
50
100
0
100
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
2
-
-
-
-
-
-
-
200
200
150
150
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Data "1" output delay time
Data "0" output delay time
Time from CS to output establishment
Time from CS to High-Z
Write cycle time
Sync data input / output timing
CS
t
CSS
t
SKH
t
SKL
t
CSH
SK
t
DIS
DI
t
PD0
DO (READ)
t
DF
DO (WRITE)
t
PD1
t
DIH
STATUS VALID
Fig.1 Sync data input / output timing
Data is taken by DI in sync with the rise of SK.
At read action, data is output from DO in sync with the rise of SK.
The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is "H", and valid until the next command start bit is input. And, while CS is "L", DO becomes High-Z.
After completion of each mode execution, set CS "L" once for internal circuit reset, and execute the following action
mode.
3/16
Characteristic data
6
H
INPUT
VOLTAGE
:
V
IH
(V)
6
5
4
3
2
1
SPEC
1
L
OUTPUT
VOLTAGE
:
V
OL
(V)
L
INPUT
VOLTAGE
:
V
IL
(V)
5
4
3
2
1
0
0
SPEC
0.8
0.6
Ta=105°C
Ta=25°C
Ta=-40°C
0.4
SPEC
Ta=105°C
Ta=25°C
Ta=-40°C
Ta=25°C
Ta=105°C
0.2
Ta=-40°C
1
2
3
4
5
6
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
SUPPLY
VOLTAGE
:
V
CC
(V)
SUPPLY
VOLTAGE
:
V
CC
(V)
L
OUTPUT
CURRENT
:
I
OL
(mA)
Fig. 2
H input voltage V
IH
(CS,SK,DI)
Fig. 3
H input voltage V
IL
(CS,SK,DI)
Fig.4
L
output voltage
V
OL
-I
OL
(V
CC
=2.5V)
1
H
OUTPUT
VOLTAGE
:
V
OH
(V)
L
OUTPUT
VOLTAGE
:
V
OL
(V)
5
H
OUTPUT
VOLTAGE
:
V
OH
(V)
5
Ta=-40°C
0.8
4
4
SPEC
Ta=25°C
Ta=105°C
0.6
SPEC
3
SPEC
Ta=-40°C
3
0.4
Ta=105°C
Ta=25°C
2
Ta=25°C
Ta=105°C
2
0.2
Ta=-40°C
1
1
0
0
1
2
3
4
5
0
0
0.4
0.8
1.2
1.6
0
0
0.4
0.8
1.2
1.6
L
OUTPUT
CURRENT
:
I
OL
(mA)
H
OUTPUT
CURRENT
:
I
OH
(mA)
H
OUTPUT
CURRENT
:
I
OH
(mA)
Fig.
5
L
output voltage
V
OL
-I
OL
(V
CC
=4.0V)
Fig.
6
H
output voltage
V
OH
-I
OH
(V
CC
=2.5V)
Fig.
7
H
output voltage
V
OH
-I
OH
(V
CC
=4.0V)
1.2
OUTPUT
LEAK
CURRENT
:
I
LO
(µA)
SPEC
1.2
SPEC
5
CURRENT
CONSUMPTION
AT
WRITING
:
I
CC
1
(WRITE)
(mA)
f
SK
=2MHz
DATA=0000h
1
0.8
0.6
0.4
0.2
0
0
Ta=105°C
Ta=25°C
Ta=-40°C
1
0.8
0.6
0.4
0.2
0
0
Ta=105°C
Ta=25°C
Ta=-40°C
4
SPEC
3
2
1
Ta=105°C
Ta=25°C
Ta=-40°C
1
2
3
4
5
6
1
2
3
4
5
6
0
0
1
2
3
4
5
6
SUPPLY
VOLTAGE
:
V
CC
(V)
SUPPLY
VOLTAGE
:
V
CC
(V)
Fig.
8
Input
leak current
I
LI
(CS,SK,DI)
Fig.
9
Output
leak current
SUPPLY
VOLTAGE
:
V
CC
(V)
I
LO
(DO)
Fig.
10
Current
consumption at WRITE action
I
CC
1(WRITE,f
SK
=2MHz)
2.5
CURRENT
CONSUMPTION
AT
READING
:
I
CC
2
(READ)
(mA)
f
SK
=2MHz
DATA=0000h
5
CURRENT
CONSUMPTION
AT
OPERATING
:
I
CC
3
(WRAL)
(mA)
SPEC
2.5
STAND
BY
CURRENT
:
I
SB
(µA)
f
SK
=2MHz
DATA=0000h
SPEC
2
4
2
SPEC
1.5
3
1.5
1
Ta=105°C
Ta=25°C
Ta=-40°C
2
0.5
1
Ta=105°C
Ta=25°C
Ta=-40°C
1
0.5
Ta=105°C
Ta=25°C
Ta=-40°C
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
SUPPLY
VOLTAGE
:
V
CC
(V)
Fig.
11
Consumption
current at READ action
I
CC
2(READ,f
SK
=2MHz)
Fig.
12
Consumption
current at WRAL action
I
CC
3(WRAL,f
SK
=2MHz)
SUPPLY
VOLTAGE
:
V
CC
(V)
SUPPLY
VOLTAGE
:
V
CC
(V)
Fig.
13
Consumption
current at standby action
I
SB
4/16
100
Ta=-40°C
1
1
SK
FREQUENCY
:
f
SK
(MHz)
H
SK
TIME
:
t
SKH
(µs)
Ta=25°C
Ta=105°C
0.6
L
SK
TIME
:
t
SKL
(µs)
10
0.8
0.8
0.6
1
SPEC
0.4
SPEC
Ta=-40°C
Ta=25°C
Ta=105°C
0.4
SPEC
Ta=-40°C
Ta=25°C
Ta=105°C
0.1
0.2
0.2
0.01
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
SUPPLY
VOLTAGE
:
V
CC
(V)
Fig. 14
1.2
1
L
CS
TIME
:
t
CS
(µs)
SK frequency
f
SK
50
Fig. 15
SUPPLY
VOLTAGE
:
V
CC
(V)
SK high time
t
SKH
300
CS
SETUP
TIME
:
t
CSS
(ns)
SPEC
Fig. 16
SUPPLY
VOLTAGE
:
V
CC
(V)
SK low time
t
SKL
0.8
0.6
0.4
0.2
0
0
Ta=-40°C
Ta=25°C
Ta=105°C
SPEC
CS
HOLD
TIME
:
t
CSH
(ns)
0
200
-50
100
SPEC
-100
Ta=-40°C
0
-150
Ta=105°C
Ta=25°C
-100
Ta=25°C
Ta=-40°C
Ta=105°C
1
2
3
4
5
-200
0
1
2
3
4
5
6
-200
0
1
2
3
4
5
6
SUPPLY
VOLTAGE
:
V
CC
(V)
SUPPLY
VOLTAGE
:
V
CC
(V)
SUPPLY
VOLTAGE
:
V
CC
(V)
Fig.17
CSロウ時間
t
CS
150
SPEC
Fig.
18
CS
hold time
150
SPEC
t
CSH
DATA
"0"
OUTPUT
DELAY
TIME
:
t
PD0
(µs)
Fig.
19
CS
setup time
1
t
CSS
100
Ta=-40°C
Ta=25°C
DI
SETUP
TIME
:
t
DIS
(ns)
DI
HOLD
TIME
:
t
DIH
(ns)
100
0.8
0.6
50
50
Ta=-40°C
Ta=25°C
0.4
Ta=105°C
Ta=25°C
Ta=-40°C
SPEC
0
Ta=105°C
0
Ta=105°C
0.2
-50
0
1
2
3
4
5
6
-50
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
SUPPLY
VOLTAGE
:
V
CC
(V)
SUPPLY
VOLTAGE
:
V
CC
(V)
SUPPLY
VOLTAGE
:
V
CC
(V)
Fig.20
DI
hold time
DATA
"1"
OUTPUT
DELAY
TIME
:
t
PD1
(µs)
t
DIH
TIME
BETWEEN
CS
AND
OUTPUT
:
t
SV
(µs)
Fig.
21
DI setup time
1
t
DIS
Fig.
22
Data
"0" output delay time
250
TIME
BETWEEN
CS
AND
OUTPUT
HIGH-Z
:
t
DF
(ns)
t
PD0
1
0.8
0.8
200
SPEC
0.6
0.6
150
0.4
Ta=105°C
Ta=25°C
SPEC
0.4
Ta=105°C SPEC
Ta=25°C
100
Ta=25°C
Ta=105°C
0.2
Ta=-40°C
0.2
Ta=-40°C
50
Ta=-40°C
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
SUPPLY
VOLTAGE
:
V
CC
(V)
SUPPLY
VOLTAGE
:
V
CC
(V)
Fig.
23
Output
data "1" delay time
6
WRITE
CYCLE
TIME
:
t
E/W
(ms)
SPEC
t
PD1
Fig.
24
Time
from CS to output establishment
t
SV
Fig.
25
Time
from CS to High-Z
t
DF
5
4
3
2
1
0
0
Ta=105°C
Ta=-40°C
Ta=25°C
1
2
3
4
5
6
SUPPLY
VOLTAGE
:
V
CC
(V)
Fig.
26
Write
cycle time
t
E/W
5/16
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