Si4710CY
New Product
Vishay Siliconix
Battery Disconnect Switch
FEATURES
D
Solution for Bi-Directional Blocking
Bi-Directional Conduction Switch
D
6- to 30-V Operation
D
Ground Referenced Logic Level Inputs
D
Integrated Low r
DS(on)
MOSFET
D
Level-Shifted Gate Drive with Internal MOSFET
D
Ultra Low Power Consumption in Off State
(Leakage Current Only)
D
Logic Supply Voltage is Not Required
DESCRIPTION
The Si4710CY is a level-shifted p-channel MOSFET. Operating
two in a series, these MOSFETs can be used as a reverse
blocking switch for battery disconnect applications. It is a solution
for multiple battery technology designs or designs that require
isolation from the power bus during charging.
The Si4710CY is available in a 8-pin SOIC package and is rated
for the commercial temperature range of –25 to 85_C.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
2
G
IN
1
5, 6, 7
D
ESD
Logic
and
Gate
Drive
Level
Shift
GND
8
V
GS
Limiter
Half a circuit shown here.
3, 4
S
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
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Si4710CY
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to GND
V
S
, V
Da
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V
V
SD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V
V
IN1
, V
IN2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 15 V
V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation
b
(t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3 W
(t = steady state) . . . . . . . . . . . . . . . . . . . . . . . 1.4 W
Thermal Resistance
Max Junction-Ambient
b
(t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . 55 C/W
(t = steady state) . . . . . . . . . . . . . . . . . . . . . 90 C/W
Max Junction-Foot
(t = steady state) . . . . . . . . . . . . . . . . . . . . . 27 C/W
Notes
a. V
SD
≤
30 V
DC
b. Device mounted with all leads soldered to 1” x 1” FR4 with laminated
copper PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V to 30 V
V
IN1
, V
IN2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 13.2 V
I
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 A to 6 A
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 85_C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 150_C
SPECIFICATIONS
Limits
Parameter
P
Symbol
S b l
Specific T
S
ifi Test Conditions
C di i
Temp
a
Min
b
Typ
c
Max
b
Unit
On-Resistance
Leakage Current
r
DS
I
DS(off)
I
S
GND
(off)
I
S
GND
(on)
V
INL
V
INH
I
INH
t
ON(IN)
t
OFF(IN)
t
RISE
t
FALL
V
GS
V
SD
V
S
= 10 V, I
D
= 1 A, V
IN
= H
V
DS
= 10 V
Room
Room
Room
0.014
0.018
1
1
W
Power Consumption
V
S
= 17 V
Room
V
S
= 10 V
V
IN
= 5.0 V
Full
Full
Full
Room
V
S
= 10 V, R
L
= 5
W,
Test Circuit 1
V
W
T Ci i
Room
Room
Room
V
S
= 30 V
I
D
= –1 A
Room
Room
3.0
1.5
1.25
50
10.2
2.5
5
6
3
3
150
18
1.1
1.1
6
0.8
mA
A
Input Voltage Low
Input Voltage High
Input Leakage Current
Turn-On Delay
Turn-Off Delay
Rise Time
Fall Time
Voltage Across Pin 6 and 7
Forward Diode
IN
to
t D or S
V
mA
ms
ns
V
Notes
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
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Document Number: 71106
S-99585—Rev. A, 20-Dec-98
Si4710CY
New Product
TIMING DIAGRAMS
Vishay Siliconix
10 V
SOURCE
V
IN
0V
50%
50%
DRAIN
V
D
5
W
t
ON(IN)
90%
10%
t
OFF(IN)
t
r
90%
10%
t
f
TEST CIRCUIT 1
PIN CONFIGURATION
SO-8
IN
G
S
S
1
2
3
4
8
7
6
5
GND
D
TRUTH TABLE
V
IN
0
D
0
D
1
1
Off
On
On
Switch
Off
Order Number: Si4710CY
PIN DESCRIPTION
Pin Number
5, 6
8
1
2
3, 4
Symbol
D
GND
IN
G
S
Ground
Description
Drain connection for MOSFET.
Logic input, IN. High level turns on the switch.
Gate output to MOSFET.
Source connection for MOSFET.
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
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Si4710CY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030
r
DS(on)
– Drain-Source On-Resistance (
W
)
r
DS(on)
– Drain-Source On-Resistance (
W
)
0.10
On-Resistance vs. Source Voltage
0.025
0.08
0.020
V
S
= 10 V
0.015
0.06
0.04
I
S
= 1 A
0.02
0.010
0.005
0.000
0
1
2
3
I
S
(A)
4
5
6
0
0
4
8
V
S
(V)
12
16
20
Normalized On-Resistance vs.
Junction Temperature
1.8
1.6
r
DS(on)
– On-Resistance (
W
)
(Normalized)
1.4
C
OSS
(pF)
1.2
1.0
0.8
500
0.6
0.4
–50
0
–25
0
25
50
75
100
125
150
0
1500
V
S
= 10 V
I
S
= 1 A
2000
2500
Output Capacitance vs. Source Voltage
1000
V
IN
= 0 V
5
10
15
V
S
(V)
20
25
30
T
J
– Junction Temperature (_C)
Off-Supply Current vs. Source Voltage
10.000
T
J
= 150_C
1.000
I
S
(
m
A)
I
S
(
m
A)
1.000
10.000
On-Supply Current vs. Source Voltage
T
J
= 150_C
T
J
= 25_C
0.100
0.100
0.010
T
J
= 25_C
0.010
0.001
0
5
10
15
V
S
(V)
20
25
30
0.001
0
5
10
15
V
S
(V)
20
25
30
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Document Number: 71106
S-99585—Rev. A, 20-Dec-98
Si4710CY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain-Source Diode Forward Voltage
10
1.8
Vishay Siliconix
Input Voltage Trip Point vs. Temperature
1.6
I
S
– Source Current (A)
T
J
= 150_C
V
IN
Trip Point
1.4
V
S
= 21 V
V
S
= 10 V
1.2
T
J
= 25_C
1.0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.8
–50
–25
0
25
50
75
100
125
150
V
SD
– Source-to-Drain Voltage (V)
T
A
= Ambient Temperature (_C)
Turn-On Delay vs. Temperature
4.0
2.0
Turn-off Delay vs. Temperature
V
S
= 10 V
Rl = 5
W
1.8
V
S
= 10 V
Rl = 5
W
3.6
3.2
t
d(on)
(
m
s)
t
d(on)
(
m
s)
1.6
2.8
1.4
2.4
1.2
2.0
–50
–25
0
25
50
75
100
125
150
1
–50
–25
0
25
50
75
100
125
150
Temperature (_C)
Temperature (_C)
Rise Time vs. Temperature
1.8
80
Fall Time vs. Temperature
V
S
= 10 V
Rl = 5
W
1.6
V
S
= 10 V
Rl = 5
W
70
1.4
t
rise
(
m
s)
( ns)
60
1.2
50
t
fall
1.0
40
0.8
30
0.6
–50
–25
0
25
50
75
100
125
150
20
–50
–25
0
25
50
75
100
125
150
Temperature (_C)
Temperature (_C)
Document Number: 71106
S-99585—Rev. A, 20-Dec-98
www.vishay.com
S
FaxBack 408-970-5600
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