Si4500DY
New Product
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
r
DS(on)
(W)
0.030 @ V
GS
= 4.5 V
0.040 @ V
GS
= 2.5 V
0.065 @ V
GS
= –4.5 V
0.100 @ V
GS
= –2.5 V
I
D
(A)
"7.0
"6.0
"4.5
"3.5
P-Channel
–20
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
2
D
G
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
20
"12
"7.0
"5.5
"30
1.7
2.5
1.6
P-Channel
–20
"12
"4.5
"3.5
"20
–1.7
Unit
V
A
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
P
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
www.vishay.com
S
FaxBack 408-970-5600
t
v
10 sec
Steady-State
Steady-State
P- Channel
Typ
40
73
20
Symbol
S b l
R
thJA
R
thJC
Typ
38
73
17
Max
50
95
22
Max
50
95
26
Unit
U i
_C/W
2-1
Si4500DY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= –16 V, V
GS
= 0 V, T
J
= 55_C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= 4.5 V, I
D
= 7.0 A
D i S
O S
R i
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= –4.5 V, I
D
= –4.5 A
V
GS
= 2.5 V, I
D
= 6.0 A
V
GS
= –2.5 V, I
D
= –3.5 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 7.0 A
V
DS
= –15 V, I
D
= –4.5 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= –1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
–20
0.022
0.058
0.030
0.087
22
10
0.70
–0.80
1.2
–1.2
V
0.030
0.065
0.040
0.100
S
W
0.6
–0.6
"100
"100
1
–1
5
–5
A
mA
A
nA
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Gate-Body Leakage
I
GSS
Diode Forward Voltage
b
V
SD
Dynamic
a
Total Gate Charge
Q
g
N-Channel
N Channel
Ch
l
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3.5 A
P-Channel
V
DS
= –10 V, V
GS
= –4.5 V, I
D
= –4.5 A
10 V
45V
45
Gate-Drain Charge
Q
gd
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N Ch
l
N-Channel
Channel
V
DD
= 10 V, R
L
= 10
W
I
D
^
1
A, V
GEN
= 4.5 V, R
G
= 6
W
P-Channel
V
DD
= –10 V R
L
= 10
W
10 V,
I
D
^
–
1
A, V
GEN
= –4.5 V, R
G
= 6
W
4.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
F
= 1.7 A, di/dt = 100 A/ms
N-Ch
P-Ch
13
8.5
3.0
2.8
3.3
1.7
22
15
40
32
50
57
20
40
40
40
40
30
80
60
100
100
40
80
80
80
ns
25
15
C
nC
Gate-Source Charge
Q
gs
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
Source-Drain Reverse Recovery Time
t
rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
www.vishay.com
S
FaxBack 408-970-5600
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Document Number: 70880
S-00269—Rev. A, 26-Apr-99
Si4500DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 3 V
2.5 V
24
I D – Drain Current (A)
I D – Drain Current (A)
24
30
Vishay Siliconix
N-CHANNEL
Transfer Characteristics
18
18
12
2V
12
T
C
= 125_C
6
25_C
–55_C
0
6
1.5 V
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.08
2100
1800
r DS(on)– On-Resistance (
W
)
C – Capacitance (pF)
0.06
Capacitance
C
iss
1500
1200
900
600
300
C
rss
0.04
V
GS
= 2.5 V
V
GS
= 4.5 V
0.02
C
oss
0
0
6
12
18
24
30
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
4.5
V
DS
= 10 V
I
D
= 4.5 A
Gate Charge
1.8
1.6
r DS(on)– On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
0.4
–50
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
3.6
V
GS
= 4.5 V
I
D
= 4.5 A
2.7
1.8
0.9
0
0
3
6
9
12
15
Q
g
– Total Gate Charge (nC)
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si4500DY
Vishay Siliconix
New Product
N-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
I S – Source Current (A)
10
0.08
I
D
= 4.5 A
0.06
T
J
= 150_C
0.04
r DS(on)
T
J
= 25_C
0.02
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
0.2
V GS(th) Variance (V)
Power (W)
60
80
Single Pulse Power, Juncion-To-Ambient
–0.0
40
–0.2
20
–0.4
–0.6
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 73_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
Si4500DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Vishay Siliconix
N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
3V
16
V
GS
= 5, 4.5, 4, 3.5 V
I D – Drain Current (A)
2.5 V
12
I D – Drain Current (A)
16
20
P-CHANNEL
Transfer Characteristics
T
C
= –55_C
125_C
12
25_C
8
8
2V
4
1.5 V
0
0
1
2
3
4
5
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
1500
Capacitance
r DS(on)– On-Resistance (
W
)
0.16
C – Capacitance (pF)
1200
C
iss
0.12
V
GS
= 2.5 V
V
GS
= 2.7 V
900
0.08
V
GS
= 4.5 V
600
C
oss
0.04
300
C
rss
0
0
4
8
12
16
20
0
0
4
8
12
16
20
I
D
– Drain Current (A)
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
V
DS
– Drain-to-Source Voltage (V)
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FaxBack 408-970-5600
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