TN0106
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
►
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
►
►
►
►
►
►
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN0106
Package Option
TO-92
TN0106N3-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
60
3.0
2.0
2.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300 C
O
SOURCE
DRAIN
GATE
TO-92 (N3)
Product Marking
TN
0 1 0 6
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
TN0106
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
I
DRM
(A)
350
2.0
1.0
125
170
350
2.0
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
A
= 25
O
C unless otherwise specified)
Min
60
0.6
-
-
-
Typ
-
-
-3.2
-
-
-
1.4
3.4
2.0
1.6
0.6
400
50
25
4.0
2.0
3.0
6.0
3.0
1.0
400
Max
-
2.0
-5.0
100
10
500
-
-
4.5
3.0
1.1
-
60
35
8.0
5.0
5.0
7.0
6.0
1.5
-
Units
V
V
nA
µA
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 0.5mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V,T
A
= 125°C
V
GS
= 5.0V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 1.0A,
R
GEN
= 25Ω
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero Gate voltage drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
-
0.75
2.0
-
-
-
225
-
-
-
-
-
-
-
-
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
A
Ω
%/
O
C
mmho V
DS
= 25V, I
D
= 500mA
pF
ns
V
ns
V
GS
= 0V, I
SD
= 500mA
V
GS
= 0V, I
SD
= 500mA
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
R
GEN
10%
90%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
TN0106
Typical Performance Curves
Output Characteristics
5
5
Saturation Characteristics
4
V
GS
= 10V
4
I
D
(amperes)
8V
2
I
D
(amperes)
3
3
V
GS
= 10V
8V
6V
2
6V
4V
2V
0
2
4
6
8
10
1
4V
2V
0
10
20
30
40
50
1
0
0
V
DS
(volts)
V
DS
(volts)
Transconductance vs. Drain Current
0.5
Power Dissipation vs. Case Temperature
2.0
T
A
= -55°C
0.4
T
A
= 25°C
G
FS
(siemens)
P
D
(watts)
0.3
T
A
= 150°C
1.0
TO-92
0.2
0.1
V
DS
= 25V
0
0
.6
1.2
1.8
0
2.4
3.0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
T
C
(
°
C)
Thermal Response Characteristics
1.0
Thermal Resistance (normalized)
T
C
= 25°C
TO-92 (pulsed)
0.8
I
D
(amperes)
1.0
0.6
0.1
TO-92 (DC)
0.4
0.2
TO-92
T
C
= 25°C
P
D
= 1W
0.01
0.1
1
10
0.01
1
10
100
1000
0
0.001
V
DS
(volts)
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
TN0106
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.3
5.0
On-Resistance vs. Drain Current
V
GS
= 5V
V
GS
= 10V
1.2
4.0
BV
DSS
(normalized)
1.1
R
DS(ON)
(ohms)
3.0
1.0
2.0
0.9
1.0
0.8
0
-50
0
50
100
150
0
1.0
2.0
3.0
4.0
5.0
T
j
( C)
O
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.4
1.4
Transfer Characteristics
3.0
2.4
V
DS
= 25V
T
A
= -55
O
C
25
O
C
1.2
V
(th)
@ 0.5mA
1.2
1.8
1.0
150 C
O
R
DS(ON)
@ 10V, 0.5A
1.0
1.2
0.8
0.8
0.6
0.6
0.6
0
0.4
0
2
4
6
8
10
-50
0
50
100
150
0.4
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(
O
C)
Gate Drive Dynamic Characteristics
f = 1MHz
75
8
V
DS
= 10V
55pF
40V
C (picofarads)
50
C
ISS
V
GS
(volts)
6
4
25
C
OSS
2
0
0
10
20
30
C
RSS
0
40
0
1.0
50pF
2.0
3.0
4.0
5.0
V
DS
(volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
I
D
(amperes)
TN0106
3-Lead TO-92 Package Outline (N3)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version D080408.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2008
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TN0106
A091208
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
