SMPS MOSFET
PD-94809
IRFP460NPbF
HEXFET
®
Power MOSFET
Applications
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Switch Mode Power Supply ( SMPS )
Lead-Free
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Effective Coss specified ( See AN1001)
V
DSS
500V
Rds(on) max
0.24Ω
I
D
20A
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
20
13
80
280
2.2
± 30
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
Full Bridge
PFC Boost
Notes
through
are on page 8
11/3/03
www.vishay.com
1
Document Number: 91236
IRFP460NPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.58 –––
V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.24
Ω
V
GS
= 10V, I
D
= 12A
3.0
––– 5.0
V
V
DS
= V
GS
, I
D
= 250µA
––– ––– 25
V
DS
= 500V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
––– ––– 100
V
GS
= 30V
nA
––– ––– -100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
23
87
34
33
3540
350
30
3930
95
200
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 12A
124
I
D
= 20A
40
nC
V
DS
= 400V
57
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 250V
–––
I
D
= 20A
ns
–––
R
G
= 4.3Ω
–––
R
D
= 13Ω,See Fig. 10
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 400V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
340
20
28
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
20
––– –––
showing the
A
G
integral reverse
––– –––
80
S
p-n junction diode.
––– ––– 1.8
V
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
––– 550 825
ns
T
J
= 25°C, I
F
= 20A
––– 7.2 10.8
µC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
www.vishay.com
2
Document Number: 91236
IRFP460NPbF
100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1
0.1
1
5.0V
0.01
5.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.001
0.1
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.5
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 20A
I
D
, Drain-to-Source Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
10
T
J
= 25
°
C
1
0.1
V DS = 50V
20µs PULSE WIDTH
5
6
7
8
9
10
11
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.vishay.com
3
Document Number: 91236
IRFP460NPbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
20
I
D
= 20A
V
GS
, Gate-to-Source Voltage (V)
16
10000
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
C, Capacitance(pF)
Ciss
1000
12
Coss
8
100
Crss
4
10
1
10
100
1000
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
100
120
140
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
10
ID, Drain-to-Source Current (A)
T
J
= 150
°
C
100
10
100µsec
1msec
T
J
= 25
°
C
1
1
T A = 25°C
T J = 150°C
Single Pulse
10
100
10msec
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
V
SD
,Source-to-Drain Voltage (V)
1000
10000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Document Number: 91236
Fig 8.
Maximum Safe Operating Area
www.vishay.com
4
IRFP460NPbF
20
V
DS
V
GS
R
D
I
D
, Drain Current (A)
15
R
G
D.U.T.
+
-
V
DD
10V
10
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
5
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91236
www.vishay.com
5
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
