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PN3569_J25Z

产品描述双极小信号
产品类别半导体    分立半导体   
文件大小24KB,共3页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准
下载文档 详细参数 选型对比 全文预览

PN3569_J25Z概述

双极小信号

PN3569_J25Z规格参数

参数名称属性值
厂商名称Fairchild
RoHS
配置Single
晶体管极性NPN
安装风格Through Hole
封装 / 箱体TO-92
集电极—发射极最大电压 VCEO40 V
发射极 - 基极电压 VEBO5 V
集电极连续电流0.5 A
最大直流电集电极电流0.5 A
功率耗散625 mW
最大工作温度+ 150 C
封装Bulk
最小工作温度- 55 C

文档预览

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PN3569
PN3569
NPN General Purpose Amplifier
• This device is designed for use at general purpose amplifiers and
switches requiring collecor currents to 300mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
40
80
5.0
500
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
h
fe
Parameter
Test Condition
I
C
= 30µA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4.0V, I
C
= 0
V
CE
= 1V, I
C
= 150mA
V
CE
= 1V, I
C
= 30mA
I
C
= 150mA, I
B
= 15mA
I
C
= 150mA, V
CE
= 1V
I
C
= 50mA, V
CE
= 10V, f = 10MHz
3.0
100
100
Min.
40
80
5.0
50
25
300
0.25
1.1
30
V
V
V
nA
nA
Max.
Units
V
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal current Gain
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003

PN3569_J25Z相似产品对比

PN3569_J25Z PN3569_J05Z PN3569_D74Z PN3569_D75Z PN3569-D74Z PN3569-D75Z PN3569-D26Z
描述 双极小信号 trans GP npn 40v 500ma TO-92 trans GP npn 40v 500ma TO-92 trans GP npn 40v 500ma TO-92 Transistor Transistor Transistor
厂商名称 Fairchild - - - Fairchild Fairchild Fairchild
配置 Single - - - Single Single Single

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