SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - JUNE 1995
PARTMARKING DETAILS
BCW31 D1
BCW32 D2
BCW33 D3
BCW31R D4
BCW32R D5
BCW33R D6
BCW31
BCW32
BCW33
E
C
B
COMPLEMENTARY TYPES
BCW31 - BCW29
BCW32 - BCW30
BCW33 - N/A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
32
32
5
200
100
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Base - Emitter Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector- Base Cut-Off Current
BCW31
Static Forward
Current Transfer
Ratio
BCW32
BCW33
Transition Frequency
Collector Capacitance
Noise Figure
SYMBOL
V
BE
V
CE(SAT)
V
BE(SAT)
I
CBO
h
FE
h
FE
h
FE
f
T
C
TC
N
110
200
420
90
150
270
300
4
10
MIN.
550
120
210
750
850
100
10
220
450
800
MHz
pF
dB
TYP.
MAX.
700
250
UNIT
mV
mV
mV
mV
mV
µ
A
CONDITIONS.
I
C
=2mA, V
CE
= 5V
I
C
=10mA, I
B
= 0.5mA
I
C
=50mA, I
B
=2.5mA
I
C
=10mA, I
B
=0.5mA
I
C
=50mA, I
B
=2.5mA
I
E
=0, V
CB
=20V
I
E
=0,V
CB
=20V,T
j=100°C
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
f = 35MHz
I
E
=I
e
=0, V
CB
=10V
f= 1MHz
I
C
= 200mA, V
CE
=5V
R
S
=2K
Ω
, f=1KHz
B= 200Hz
nA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
PAGE NO
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