Si4837DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
- 30
FEATURES
I
D
(A)
8.3
6.8
r
DS(on)
(W)
0.020 @ V
GS
= - 10 V
0.030 @ V
GS
= - 4.5 V
D
TrenchFETr Power MOSFET
D
LITTLE FOOTr
Plus
Schottky
D
100% R
g
Tested
APPLICATIONS
D
Battery Charging
D
DC/DC Converters
- Asynchronous Buck
- Voltage Inverter
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
30
V
f
(V)
Diode Forward Voltage
0.53 V @ 3 A
I
F
(A)
3
S
K
SO-8
K
S
S
G
1
2
3
4
Top View
Ordering Information: Si4837DY
Si4837DY-T1 (with Tape and Reel)
8
7
6
5
A
D
D
D
G
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
J
= 150_C) (MOSFET)
a, b
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
a, b
Maximum Power Dissipation
(Schottky)
a, b
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
T
J
, T
stg
P
D
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
KA
V
GS
I
D
I
DM
I
S
I
F
I
FM
10 Sec
- 30
30
"20
- 8.3
- 6.6
- 40
- 2.3
3
20
2.5
1.6
1.5
0.98
Steady State
Unit
V
- 6.1
- 4.9
- 1.25
A
1.38
0.88
1.0
0.64
- 55 to 150
_C
W
Operating Junction and Storage Temperature Range
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
Document Number: 71662
S-31726—Rev. B, 18-Aug-03
www.vishay.com
1
Si4837DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient (t
v
10 sec)
a
ti t A bi t
)
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
Typical
37
65
Maximum
50
81
90
125
25
62.5
Unit
R
thJA
Maximum Junction-to-Ambient (t = steady state)
a
M i
J
ti t A bi t
t d t t )
70
100
_C/W
Maximum Junction to Foot (Drain)
Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
R
thJF
20
50
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward
Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= - 24 V, V
GS
= 0 V
V
DS
= - 24 V, V
GS
= 0 V, T
J
= 75_C
V
DS
w
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 8.3 A
V
GS
= - 4.5 V, I
D
= - 6.8 A
V
DS
= - 15 V, I
D
= - 8.3 A
I
S
= - 2.3 A, V
GS
= 0 V
- 20
0.0165
0.0245
22
- 0.75
- 1.1
0.020
0.030
- 1.0
"100
-1
- 10
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 2.3 A, di/dt = 100 A/ms
V
DD
= - 15 V, R
L
= 15
W
I
D
^
- 1 A, V
GEN
= - 10 V, R
G
= 6
W
1
V
DS
= - 15 V, V
GS
= - 5 V, I
D
= - 8.3 A
,
,
22
9
6.6
1.9
17
15
56
21
45
2
26
23
85
32
70
ns
W
33
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
V
F
Test Condition
I
F
= 3 A
I
F
= 3 A, T
J
= 125_C
V
r
= 30 V
V
r
= 30 V, T
J
= 75_C
V
r
= 30 V, T
J
= 125_C
V
r
= 15 V
Min
Typ
0.485
0.42
0.008
0.4
6.5
102
Max
0.53
0.47
0.1
5
20
Unit
V
Maximum Reverse Leakage Current
g
Junction Capacitance
www.vishay.com
I
rm
C
T
mA
pF
2
Document Number: 71662
S-31726—Rev. B, 18-Aug-03
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
MOSFET
50
Output Characteristics
V
GS
= 10 thru 5 V
Transfer Characteristics
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
4V
30
20
20
T
C
= 125_C
10
3V
10
25_C
- 55_C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
3500
Capacitance
r DS(on)- On-Resistance (
W
)
0.04
C - Capacitance (pF)
2800
C
iss
0.03
V
GS
= 4.5 V
V
GS
= 10 V
2100
0.02
1400
C
oss
700
C
rss
0.01
0.00
0
10
20
30
40
50
I
D
- Drain Current (A)
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
10
V GS - Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 8.3 A
Gate Charge
1.8
1.6
r DS(on)- On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
- 50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 8.3 A
8
6
4
2
0
0
8
16
24
32
40
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 71662
S-31726—Rev. B, 18-Aug-03
www.vishay.com
3
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.070
MOSFET
On-Resistance vs. Gate-to-Source Voltage
r DS(on)- On-Resistance (
W
)
I S - Source Current (A)
0.056
T
J
= 150_C
10
0.042
0.028
I
D
= 8.3 A
T
J
= 25_C
0.014
1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
SD
- Source-to-Drain Voltage (V)
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.8
0.6
V GS(th) Variance (V)
0.4
0.2
0.0
I
D
= 250
mA
Power (W)
200
Single Pulse Power, Junction-to-Ambient
160
120
80
40
- 0.2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
0.1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
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Document Number: 71662
S-31726—Rev. B, 18-Aug-03
Si4837DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
100
10
I
R
- Reverse Current (mA)
I
F
- Forward Current (A)
1
T
J
= 150_C
1
5
SCHOTTKY
Forward Voltage Drop
0.1
30 V
20 V
0.01
T
J
= 25_C
0.001
0.0001
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
500
0.1
0
0.2
0.4
0.6
0.8
V
F
- Forward Voltage Drop (V)
Capacitance
C
T
- Junction Capacitance (pF)
400
300
200
100
0
0
6
12
18
24
30
V
KA
- Reverse Voltage (V
Document Number: 71662
S-31726—Rev. B, 18-Aug-03
www.vishay.com
5
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