f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz.
Vdd_YY
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz.
Vdd_YY
LVCMOS Output Characteristics
Output Low Voltage
VOL
–
–
10%
Vdd
Input Characteristics
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
VIH
VIL
Z_in
70%
–
50
2
Startup Time
Enable/Disable Time
Resume Time
RMS Period Jitter
T_start
T_oe
T_resume
T_jitt
–
–
–
–
–
Peak-to-peak Period Jitter
T_pk
–
–
RMS Phase Jitter (random)
T_phj
–
–
–
–
–
–
87
–
–
–
–
1.8
–
12
14
0.5
1.3
–
–
–
30%
150
–
5
138
5
Jitter
3
3.3
25
30
0.9
2
1.4
2.3
ps
ps
ps
ps
ps
ps
ps
ps
Vdd
Vdd
k
M
ms
ns
ms
Startup and Resume Timing
Table 2. Pin Description
Pin
Symbol
Output Enable
1
OE/ST /NC
̅ ̅̅
Functionality
H
[1]
: specified frequency output
L: output is high impedance. Only output driver is disabled.
H
[1]
: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open
[1]
: Specified frequency
output. Pin 1 has no function.
Electrical ground
Oscillator output
Power supply voltage
[2]
OE/ST /NC
̅ ̅̅
Top View
VDD
Standby
No Connect
2
3
4
GND
OUT
VDD
Power
Output
Power
GND
OUT
Figure 1. Pin Assignments
Notes:
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
̅ ̅̅
2.
A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.07
Page 2 of 18
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance
of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free
soldering guidelines)
Junction Temperature
[3]
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Table 4. Thermal Consideration
[4]
Package
7050
5032
3225
2520
2016
JA, 4 Layer Board
(°C/W)
142
97
109
117
152
JA, 2 Layer Board
(°C/W)
273
199
212
222
252
JC, Bottom
(°C/W)
30
24
27
26
36
Note:
4. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
Table 5. Maximum Operating Junction Temperature
[5]
Max Operating Temperature (ambient)
70°C
85°C
Maximum Operating Junction Temperature
80°C
95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev 1.07
Page 3 of 18
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Test Circuit and Waveform
[6]
Vdd
Vout
Test Point
tr
80% Vdd
tf
4
Power
Supply
0.1 uF
1
3
2
15pF
(including probe
and fixture
capacitance)
50%
20% Vdd
High Pulse
(TH)
Period
Low Pulse
(TL)
Vdd
OE/ST Function
1 kΩ
Figure 2. Test Circuit
Note:
6.
Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 3. Waveform
Timing Diagrams
90% Vdd
Vdd
Vdd
50% Vdd
[7]
Pin 4 Voltage
T_start
No Glitch
during start up
ST Voltage
T_resume
CLK Output
HZ
T_start: Time to start from power-off
CLK Output
HZ
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ ST̅ Mode)
̅ ̅
Figure 5. Standby Resume Timing ( ST̅ Mode Only)
̅ ̅
Vdd
50% Vdd
OE Voltage
T_oe
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
T_oe: Time to re-enable the clock output
CLK Output
HZ
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Note:
7.
Figure 7. OE Disable Timing (OE Mode Only)
SiT1602 has “no runt” pulses and “no glitch” output during startup or resume.
在全球半导体产业因景气不佳而纷传并购、整合之际，两大IT巨头三星、IBM日前却双双宣布，将强化半导体产业投资。 三星电子本周一宣布，已向韩国证券交易所提交一份申请文件，打算2008年投下10.5亿美元，用于升级内存芯片生产线、改进技术工艺，从而提高产能并降低成本。无独有偶。本周二IBM公司宣布，未来3年将投资10亿美元，用于扩充位于纽约州 East Fishkill 的半导体工厂，以消...[详细]
ADI 近日宣布日立公司在其最新的消费类无线传输集线器 TP-WL700H 中使用 ADI 公司的 Advantiv ™高级电视解决方案 IC ，以提供高端的无线功能、灵活性和无缝高清 (HD) 连接。这款 TP-WL700H 集线器仅在日本市场供应，它是一款单机设备，专门用于为日立 Wooo UT 系列液晶电视提供无线高清娱乐内容。在日立公司最新的无线视...[详细]
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
