VSKDU162/12PbF
Vishay High Power Products
HEXFRED
®
Ultrafast Diodes, 100 A
(New INT-A-PAK Power Modules)
FEATURES
• Electrically isolated: DBC base plate
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style New INT-A-PAK
New INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
1200 V
2.5 V
150 ns
110 A at 100 °C
PRODUCT SUMMARY
V
R
V
F
(typical)
t
rr
(typical)
I
F(DC)
at T
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum power dissipation
RMS isolation voltage
Operating junction and storage
temperature range
SYMBOL
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
Limited by junction temperature
T
C
= 25 °C
T
C
= 100 °C
50 Hz, circuit to base, all terminal shorted, t = 1 s
TEST CONDITIONS
VALUES
1200
205
110
800
695
280
3500
- 40 to + 150
W
V
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse leakage current
SYMBOL
V
BR
V
FM
I
RM
I
R
= 100 μA
I
F
= 100 A
I
F
= 160 A
T
J
= 150 °C, V
R
= 1200 V
TEST CONDITIONS
MIN.
1200
-
-
-
TYP.
-
2.5
2.9
18
MAX.
-
3.2
3.9
30
mA
V
UNITS
Document Number: 94512
Revision: 04-May-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
VSKDU162/12PbF
Vishay High Power Products
HEXFRED
®
Ultrafast Diodes, 100 A
(New INT-A-PAK Power Modules)
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Peak rate of recovery current
SYMBOL
t
rr
I
RRM
Q
rr
dI
(rec)M
/dt
TEST CONDITIONS
T
J
= 25 °C
T
J
= 25 °C
T
J
= 25 °C
T
J
= 25 °C
I
F
= 160 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
TYP.
150
20
2000
-
MAX.
200
22
2400
300
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and
storage temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
to heatsink
Mounting torque ± 10 %
busbar
Approximate weight
Case style
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound.
TEST CONDITIONS
VALUES
- 40 to 150
0.18
°C/W
0.05
4
Nm
6
200
7.1
g
oz.
UNITS
°C
New INT-A-PAK
www.vishay.com
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94512
Revision: 04-May-10
VSKDU162/12PbF
HEXFRED
®
Ultrafast Diodes, 100 A
Vishay High Power Products
(New INT-A-PAK Power Modules)
100
1000
Reverse Current - I
R
(mA)
T
J
= 150˚C
10
1
0.1
0.01
0.001
200
25˚C
Instantaneous Forward Current - I
F
(A)
100
400
600
800
1000
1200
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
160
10
Allowable Case Temperature (°C)
Tj = 150˚C
Tj = 25˚C
140
120
100
80
60
40
20
0
0
40
80
120
160
200
Average Forward Current - I
F(AV)
(A)
DC
Square wave (D = 0.50)
1
0
1
2
3
4
5
6
7
8
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Maximum Allowable Case Temperature vs.
Average Forward Current
1
(°C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
0.1
D = 0.20
P
DM
Thermal Impedance - Z
thJC
0.01
t1
t2
0.001
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t / t
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
1
10
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94512
Revision: 04-May-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
VSKDU162/12PbF
Vishay High Power Products
HEXFRED
®
Ultrafast Diodes, 100 A
(New INT-A-PAK Power Modules)
10000
900
Average Power Loss (Watts)
Vr = 200V
D = 0.20
D = 0.25
D = 0.33
D = 0.50
800
700
600
500
400
300
200
100
0
0
RMS Limit
Q
RR
(nC)
D = 0.75
1000
If = 160A, Tj = 25˚C
DC
50
100
150
200
250
100
100
di
f
/ dt - (A/µs)
Average Forward Current - I
F(AV)
(A)
1000
Fig. 5 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Charge vs. dI
F
/dt
(Per Leg)
1000
Vr = 200V
100
Vr = 200V
t
rr
(ns)
If = 160A, Tj = 25˚C
I
RR
(A)
If = 160A, Tj = 25˚C
100
100
di
f
/ dt - (A/µs)
1000
10
100
di
f
/ dt - (A/µs)
1000
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
(Per Leg)
Fig. 8 - Typical Reverse Recovery Current vs. dI
F
/dt
(Per Leg)
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 94512
Revision: 04-May-10
VSKDU162/12PbF
HEXFRED
®
Ultrafast Diodes, 100 A
Vishay High Power Products
(New INT-A-PAK Power Modules)
ORDERING INFORMATION TABLE
Device code
VS
1
1
2
3
4
5
6
-
-
-
-
-
-
K
2
DU
3
162
4
/
12
5
PbF
6
Vishay HPP
K = New INT-A-PAK module
DU = HEXFRED
®
ultrafast diode
Current rating
Voltage rating (12 = 1200 V)
PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
(1)
~
+
(2)
-
(3)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95254
Document Number: 94512
Revision: 04-May-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
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