50MT060WHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED
®
antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• UL approved file E78996
MTP
• Speed 60 kHz to 100 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
V
CES
V
CE(on)
typical at V
GE
= 15 V
I
C
at T
C
= 25 °C
600 V
2.3 V
114 A
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low stray inductance design for high speed operation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 minute
T
C
= 25 °C
T
C
= 100 °C
T
C
= 109 °C
T
C
= 25 °C
T
C
= 109 °C
TEST CONDITIONS
MAX.
600
114
50
350
A
350
34
200
± 20
V
2500
658
W
263
UNITS
V
Document Number: 94468
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
50MT060WHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Warp Speed IGBT), 114 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V
(BR)CES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 500 μA
V
GE
= 15 V, I
C
= 50 A
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 100 A
V
GE
= 15 V, I
C
= 50 A, T
J
= 150 °C
Gate threshold voltage
Collector to emitter leaking current
V
GE(th)
I
CES
I
C
= 0.5 mA
V
GE
= 0 V, I
C
= 600 A
V
GE
= 0 V, I
C
= 600 A, T
J
= 150 °C
I
F
= 50 A, V
GE
= 0 V
Diode forward voltage drop
V
FM
I
F
= 50 A, V
GE
= 0 V, T
J
= 150 °C
I
F
= 100 A, V
GE
= 0 V, T
J
= 25 °C
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
MIN.
600
-
-
-
3
-
-
-
-
-
-
TYP.
-
2.3
2.5
1.72
-
-
-
1.58
1.49
1.9
-
MAX.
-
3.15
3.2
V
2.17
6
0.4
mA
10
1.80
1.68
2.17
± 250
nA
V
UNITS
V
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
V
CC
= 200 V, I
C
= 50 A
dI/dt = 200 A/μs
T
J
= 125 °C
V
CC
= 200 V, I
C
= 50 A
dI/dt = 200 A/μs
I
C
= 52 A
V
CC
= 400 V
V
GE
= 15 V
Internal gate resistors (see electrical diagram)
I
C
= 50 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, T
J
= 25 °C
Internal gate resistors (see electrical diagram)
I
C
= 50 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, T
J
= 150 °C
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
331
44
133
0.26
1.2
1.46
0.73
1.66
2.39
7100
510
140
82
8.3
340
137
12.7
870
MAX.
385
52
176
-
-
-
-
-
-
-
-
-
97
10.6
514
153
14.8
1132
ns
A
nC
ns
A
nC
pF
mJ
mJ
nC
UNITS
www.vishay.com
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94468
Revision: 01-Mar-10
50MT060WHTAPbF
"Half Bridge" IGBT MTP
Vishay High Power Products
(Warp Speed IGBT), 114 A
THERMISTOR SPECIFICATIONS
PARAMETER
Resistance
Sensitivity index of the
thermistor material
Notes
(1)
T , T are thermistor´s temperatures
0
1
(2)
SYMBOL
R
0 (1)
β
(1)(2)
T
0
= 25 °C
T
0
= 25 °C
T
1
= 85 °C
TEST CONDITIONS
MIN.
-
-
TYP.
30
4000
MAX.
-
-
UNITS
kΩ
K
R
0
1
1
------
=
exp
β
⎛
-----
–
-----
⎞
, temperature in Kelvin
-
⎝
T
-
T
-
⎠
R
1
0
1
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction
temperature range
IGBT, Diode
Thermistor
T
J
T
Stg
IGBT
Junction to case
Diode
Case to sink per module
Clearance
(1)
Creepage
(1)
R
thJC
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
External shortest distance in air between 2 terminals
Shortest distance along the external surface of the
insulating material between 2 terminals
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
SYMBOL
TEST CONDITIONS
MIN.
- 40
- 40
- 40
-
-
-
5.5
8
TYP.
-
-
-
-
-
0.06
-
-
MAX.
150
125
125
0.38
0.8
-
-
mm
-
°C/W
°C
UNITS
Storage temperature range
Mounting torque to heatsink
Weight
(1)
3 ± 10 %
66
Nm
g
Note
Standard version only i.e. without optional thermistor
I
C
- Collector to Emitter Current (A)
V
GE
= 15 V
20 μs pulse width
Maximum DC Collector Current (A)
100
120
100
80
60
40
20
0
25
50
75
100
125
150
10
T
J
= 150 °C
T
J
= 25 °C
1
0.1
1.0
10
94468_02
94468_01
V
CE
- Collector to Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
T
C
- Case Temperature (°C)
Fig. 2 - Maximum Collector Current vs. Case Temperature
Document Number: 94468
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
50MT060WHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Warp Speed IGBT), 114 A
3.0
160
V
CE
- Typical Collector to Emitter
Voltage (V)
V
R
= 200 V
I
F
= 50 A, T
J
= 125 °C
140
2.5
I
C
= 100 A
2.0
I
C
= 50 A
t
rr
(ns)
120
100
I
F
= 50 A, T
J
= 25 °C
1.5
I
C
= 20 A
1.0
20
40
60
80
100
120
140
160
94468_06
80
60
100
1000
94468_03
T
J
- Junction Temperature (°C)
Fig. 3 - Typical Collector to Emitter Voltage vs.
Junction Temperature
20
dI
F
/dt (A/µs)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
100
V
CC
= 400 V
I
C
= 52 A
V
R
= 200 V
V
GE
-
Gate
to Emitter Voltage (V)
16
I
F
= 50 A, T
J
= 125 °C
I
RRM
(A)
12
10
I
F
= 50 A, T
J
= 25 °C
8
4
0
0
94468_04
100
200
300
400
94468_07
1
100
1000
O
G
- Typical
Gate
Charge (nC)
Fig. 4 - Typical Gate Charge vs.
Gate to Emitter Votlage
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Current vs. dI
F
/dt
I
F
- Instantaneous Forward Current (A)
100
2000
V
R
= 200 V
1500
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Q
rr
(nC)
I
F
= 50 A, T
J
= 125 °C
1000
500
I
F
= 50 A, T
J
= 25 °C
1
0.4
0.8
1.2
1.6
2.0
2.4
94468_08
0
100
1000
94468_05
V
FM
- Forward Voltage Drop (V)
Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 94468
Revision: 01-Mar-10
50MT060WHTAPbF
"Half Bridge" IGBT MTP
Vishay High Power Products
(Warp Speed IGBT), 114 A
3, 4
3, 4
2
T
11
12
5, 6
R
1
9
9
10
10
Thermistor
option
10
Ω
10
Ω
12
5, 6
11
10
Ω
10
Ω
7, 8
7, 8
Fig. 9 - Functional Diagram
Fig. 10 - Electrical Diagram
ORDERING INFORMATION TABLE
Device code
50
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
MT
2
060
3
W
4
H
5
T
6
A
7
PbF
8
Current rating (50 = 50 A)
Essential part number
Voltage rating (060 = 600 V)
Speed/type (W = Warp IGBT)
Circuit configuration (H = Half bridge)
T = Thermistor
A = Al
2
O
3
substrate
Lead (Pb)-free
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95175
Document Number: 94468
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
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